• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2008년도 춘계학술대회논문집
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• pp.671-674
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• 2008

We investigate the slippage effect in a micro-channel depending on the surface characteristics; hydrophilic, hydrophobic, and super-hydrophobic wettabilities. The micro-scale grooves are fabricated on the vertical wall to make the super-hydrophobic surfaces, which enable us visualize the flow fields near walls and directly measure the slip length. Velocity profiles are measured using micro-particle image velocimetry (Micro-PIV) and compared those in the hydrophilic glass, hydrophobic PDMS, and super-hydrophobic PDMS micro-channels. To directly measure the velocity in the super-hydrophobic micro-channel, the transverse groove structures are fabricated on the vertical wall in the micro-channel. The velocity profile near the wall shows larger slip length and, if the groove structure is high and wide, the liquid meniscus forms curves into the valley so that the wavy flow is created after the grooves.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 심포지엄 논문집 정보 및 제어부문
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• pp.65-67
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• 2004

Change of state of Channel between two wireless terminals which is caused by noise and multiple environmental conditions for happens frequently from the Wireles Network. So, When it is like that planning a wireless network protocol or performance analysis, it follows to change of state of time-varying channel and packet the analysis against a transmission efficiency is necessary. In this paper, analyzes transmission time of a packet and a packet in a time-varying and packet based Wireless Network. To reflecte the feature of the time-varying channel, we use a Signal Flow Graph model. From the model the mean of transmission time and the mean of queue length of the packet are analyzed in terms of the packet distribution function, the packet transmission service time, and the PER of the time-varying channel.

• 전자공학회논문지A
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• 제30A권12호
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• pp.60-68
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• 1993

Thw VLSI device of submicron level trends to have a low level of reliability because of hot carriers which are caused by short channel effects and which do not appear in a long-channel MOSFET operated in 5V. In order to minimize the generation of hot carrier, much research has been made into various types of drain structures. This study has suggested CG MOSFET (Concaved Gate MOSFET) as new drain structure and compared its electrical characteristics with those of the conventional MOSFET and LDD-structured MOSFET by making use of a simulation method. These three device were assumed to be produced by the LOCOS process and a computer-based analysis(PISCES-2B simulator) was carried out to verify the hot electron-resistant behaviours of the devices. In the present simulation, the channel length of these devises was 1.0$\mu$m and their DC characteristics, such as VS1DT-IS1DT curves, gate and substrate current, potential contours, breakdown voltage and electric field were compared with one another.

• Korea-Australia Rheology Journal
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• 제17권4호
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• pp.207-215
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• 2005

We present a finite difference solution for electrokinetic flow in rectangular microchannels encompassing Navier's fluid slip phenomena. The externally applied body force originated from between the nonlinear Poisson-Boltzmann field around the channel wall and the flow-induced electric field is employed in the equation of motion. The basic principle of net current conservation is applied in the ion transport. The effects of the slip length and the long-range repulsion upon the velocity profile are examined in conjunction with the friction factor. It is evident that the fluid slip counteracts the effect by the electric double layer and induces a larger flow rate. Particle streak imaging by fluorescent microscope and the data processing method developed ourselves are applied to straight channel designed to allow for flow visualization of dilute latex colloids underlying the condition of simple fluid. The reliability of the velocity profile determined by the flow imaging is justified by comparing with the finite difference solution. We recognized the behavior of fluid slip in velocity profiles at the hydrophobic surface of polydimethylsiloxane wall, from which the slip length was evaluated for different conditions.

• 지구물리와물리탐사
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• 제7권4호
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• pp.245-250
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• 2004

단일 채널 해양 탄성파탐사 자료의 2차원 탄성파 단면도에 수평거리 보정을 적용하여 탄성파 단면도의 수평축을 거리 단위로 표현하였다. 수평축을 거리 단위로 표시함으로써 탐사선의 운항 속력이 변할 경우 나타나는 수평 거리 왜곡 현상을 상당히 해소할 수 있었다. 수평거리 보정을 위하여 탄성파 자료의 각 트레이스에 저장된 GPS 위치 정보와 자료 취합 윈도우를 이용하였다. 자료 취합 윈도우의 최소 길이는 탐사선의 속력과 발파 간격에 의해 결정하였으며, 최대 길이는 1차 프레넬대 반경을 이용하여 결정하였다. 자료 취합 윈도우의 길이를 결정함에 있어 수평 해상도와 중합의 효과를 동시에 고려하였다. 수평거리 보정 과정을 적용하여 실제 지층구조와 유사하다고 생각되는 2차원 탄성파 단면도를 작성할 수 있었다.

• 대한전자공학회논문지TC
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• 제37권4호
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• pp.17-24
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• 2000

통신을 위한 채널로써 전력선을 활용하기 위해서, 전력선상에서 존재하는 잡음을 측정하여 잡음 데이터를 획득하고, 망구조에 따른 단위길이(100m당)에 따른 신호 감쇄량을 측정했다. 본 논문에서 구분한 3종류의 전력선 구조에 따른 신호 감쇄와 잡음의 최대, 최소값을 이용해서 채널 용량식에 대입한 후 통신 채널로써 전력선이 가지는 채널용량을 계산하였다. 건물내 전력선이 가지는 채널용량은 전력선에 있어서 송,수신기 사이의 거리와 전력선 망구조에 영향을 크게 받는 것으로 나타났다.

• Journal of Communications and Networks
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• 제15권5호
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• pp.496-503
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• 2013

In an orthogonal frequency division multiplexing system, conventional interpolation techniques cannot correctly balance performance and overhead when estimating dynamic long-delay channels in single frequency networks (SFNs). In this study, classical filter analysis and design methods are employed to derive a complex interpolator for maximizing the resistible echo delay in a channel estimator on the basis of the correlation between frequency domain interpolating and time domain windowing. The coefficient computation of the complex interpolator requires a key parameter, i.e., channel length, which is obtained in the frequency domain with a tentative estimation scheme having low implementation complexity. The proposed complex adaptive interpolator is verified in a simulated digital video broadcasting for terrestrial/handheld receiver. The simulation results indicate that the designed channel estimator can not only handle SFN echoes with more than $200{\mu}s$ delay but also achieve a bit-error rate performance close to the optimum minimum mean square error method, which significantly outperforms conventional channel estimation methods, while preserving a low implementation cost in a short-delay channel.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제12권1호
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• pp.325-339
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• 2018

In this paper, we propose a joint adaptive combining and variable tap-length multiuser detector (MUD) for amplify-and-forward (AF) underwater acoustic cooperative interleave-division multiple access (IDMA) communication system. The proposed MUD jointly realizes tap-length adjustment, adaptive combining, and multiuser detection. In contrast to the existing methods, the proposed detector can adaptively combine the received signals from different nodes at destination, and does not need the assumption that full and perfect channel state information (CSI) of all the links at the receiver is known. Moreover, the proposed detector can adaptively adjust the tap coefficient vector and tap-length of each branch according to the specific channel profile of each branch. Simulation results validate the feasibility and show the advantages of the proposed detector against existing counterparts.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.77-78
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• 2009

We report numerical simulations to investigate of the dependence of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of 10um, but varying the channel width W from 5nm to 5um, and thickness t from 10nm to 30nm. We have shown that $Q_{ON}/Q_{OFF}$ drastically decreases (from ${\sim}2.9{\times}10^4$ to ${\sim}9.8{\times}10^3$) as the channel thickness increases (from 10nm to 30nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed than that in the bottom of control channel.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.728-731
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• 2009

We report numerical simulations to investigate of the dependendce of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of $10\;{\mu}m$, but varying the channel width W from 5 nm to $5\;{\mu}m$, and thickness t from 10 nm to 30 nm. We have show that $Q_{ON}/Q_{OFF}$ drastically decreases (from $^{\sim}2.9{\times}10^4$ to $^{\sim}9.8{\times}10^3$) as the channel thickness increases (from 10 nm to 30 nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed then in the bottom of control channel.