• Title/Summary/Keyword: Length of a channel

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A Study on the Design of a Beta Ray Sensor Reducing Digital Switching Noise (디지털 스위칭 노이즈를 감소시킨 베타선 센서 설계)

  • Kim, Young-Hee;Jin, Hong-Zhou;Cha, Jin-Sol;Hwang, Chang-Yoon;Lee, Dong-Hyeon;Salman, R.M.;Park, Kyung-Hwan;Kim, Jong-Bum;Ha, Pan-Bong
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.5
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    • pp.403-411
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    • 2020
  • Since the analog circuit of the beta ray sensor circuit for the true random number generator and the power and ground line used in the comparator circuit are shared with each other, the power generated by the digital switching of the comparator circuit and the voltage drop at the ground line was the cause of the decreasein the output signal voltage drop at the analog circuit including CSA (Charge Sensitive Amplifier). Therefore, in this paper, the output signal voltage of the analog circuit including the CSAcircuit is reduced by separating the power and ground line used in the comparator circuit, which is the source of digital switching noise, from the power and ground line of the analog circuit. In addition, in the voltage-to-voltage converter circuit that converts VREF (=1.195V) voltage to VREF_VCOM and VREF_VTHR voltage, there was a problem that the VREF_VCOM and VREF_VTHR voltages decrease because the driving current flowing through each current mirror varies due to channel length modulation effect at a high voltage VDD of 5.5V when the drain voltage of the PMOS current mirror is different when driving the IREF through the PMOS current mirror. Therefore, in this paper, since the PMOS diode is added to the PMOS current mirror of the voltage-to-voltage converter circuit, the voltages of VREF_VCOM and VREF_VTHR do not go down at a high voltage of 5.5V.

Efficient Anonymous Broadcast Encryption with Adaptive Security

  • Zhou, Fu-Cai;Lin, Mu-Qing;Zhou, Yang;Li, Yu-Xi
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.9 no.11
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    • pp.4680-4700
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    • 2015
  • Broadcast encryption is an efficient way to distribute confidential information to a set of receivers using broadcast channel. It allows the broadcaster to dynamically choose the receiver set during each encryption. However, most broadcast encryption schemes in the literature haven't taken into consideration the receiver's privacy protection, and the scanty privacy preserving solutions are often less efficient, which are not suitable for practical scenarios. In this paper, we propose an efficient dynamic anonymous broadcast encryption scheme that has the shortest ciphertext length. The scheme is constructed over the composite order bilinear groups, and adopts the Lagrange interpolation polynomial to hide the receivers' identities, which yields efficient decryption algorithm. Security proofs show that, the proposed scheme is both secure and anonymous under the threat of adaptive adversaries in standard model.

Estimation of Convolutional Interleaver Parameters using Linear Characteristics of Channel Codes (채널 부호의 선형성을 이용한 길쌈 인터리버의 파라미터 추정)

  • Lee, Ju-Byung;Jeong, Jeong-Hoon;Kim, Sang-Goo;Kim, Tak-Kyu;Yoon, Dong-Weon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.48 no.4
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    • pp.15-23
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    • 2011
  • An interleaver rearranges a channel-encoded data in the symbol unit to spread burst errors occurred in channels into random errors. Thus, the interleaving process makes it difficult for a receiver, who does not have information of the interleaver parameters used in the transmitter, to de-interleave an unknown interleaved signal. Recently, various researches on the reconstruction of an unknown interleaved signal have been studied in many places of literature by estimating the interleaver parameters. They, however, have been mainly focused on the estimation of the block interleaver parameters required to reconstruct the de-interleaver. In this paper, as an extension of the previous researches, we estimate the convolutional interleaver parameters, e.g., the number of shift registers, a shift register depth, and a codeword length, required to de-interleave the unknown data stream, and propose the de-interleaving procedure by reconstructing the de-interleaver.

A Continuous Electrical Cell Lysis Chip using a DC Bias Voltage for Cell Disruption and Electroosmotic Flow (한 쌍의 전극으로 전기 삼투 유동과 세포 분쇄 기능을 동시에 구현한 연속적인 세포 분쇄기)

  • Lee, Dong-Woo;Cho, Young-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.32 no.10
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    • pp.831-835
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    • 2008
  • We present a continuous electrical cell lysis chip, using a DC bias voltage to generate the focused high electric field for cell lysis as well as the electroosmotic flow for cell transport. The previous cell lysis chips apply an AC voltage between micro-gap electrodes for cell lysis and use pumps or valves for cell transport. The present DC chip generates high electrical field by reducing the width of the channel between a DC electrode pair, while the previous AC chips reducing the gap between an AC electrode pair. The present chip performs continuous cell pumping without using additional flow source, while the previous chips need additional pumps or valves for the discontinuous cell loading and unloading in the lysis chambers. The experimental study features an orifice whose width and length is 20 times narrower and 175 times shorter than the width and length of a microchannel. With an operational voltage of 50 V, the present chip generates high electric field strength of 1.2 kV/cm at the orifice to disrupt cells with 100% lysis rate of Red Blood Cells and low electric field strength of 60 V/cm at the microchannel to generate an electroosmotic flow of $30{\mu}m/s{\pm}9{\mu}m/s$. In conclusion, the present chip is capable of continuous self-pumping cell lysis at a low voltage; thus, it is suitable for a sample pretreatment component of a micro total analysis system or lab-on-a-chip.

DC and RF Characteristics of AlGaN/InGaN HEMTs Grown by Plasma-Assisted MBE (AlGaN/InGaN HEMTs의 고성능 초고주파 전류 특성)

  • 이종욱
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.8
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    • pp.752-758
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    • 2004
  • This paper reports on the DC and RF characteristics of AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beau epitaxy(MBE) on sapphire substrates. The devices with a 0.5 ${\mu}$m gate-length exhibited relatively flat transconductance(g$\_$m/), which results from the enhanced carrier confinement of the InGaN channel. The maximum drain current was 880 mA/mm with a peak g$\_$m/ of 156 mS/mm, an f$\_$T/ of 17.3 GHz, and an f$\_$MAX/ or 28.7 GHz. In addition to promising DC and RF results, pulsed I-V and current-switching measurements showed little dispersion in the unpassivated AlGaN/InGaN HEMTs. These results suggest that the addition of In to the GaN channel improves the electron transport characteristics as well as suppressing current collapse that is related to the surface trap states.

Regionalized TSCH Slotframe-Based Aerial Data Collection Using Wake-Up Radio (Wake-Up Radio를 활용한 지역화 TSCH 슬롯프레임 기반 항공 데이터 수집 연구)

  • Kwon, Jung-Hyok;Choi, Hyo Hyun;Kim, Eui-Jik
    • Journal of Internet of Things and Convergence
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    • v.8 no.2
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    • pp.1-6
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    • 2022
  • This paper presents a regionalized time slotted channel hopping (TSCH) slotframe-based aerial data collection using wake-up radio. The proposed scheme aims to minimize the delay and energy consumption when an unmanned aerial vehicle (UAV) collects data from sensor devices in the large-scale service area. To this end, the proposed scheme divides the service area into multiple regions, and determines the TSCH slotframe length for each region according to the number of cells required by sensor devices in each region. Then, it allocates the cells dedicated for data transmission to the TSCH slotframe using the ID of each sensor device. For energy-efficient data collection, the sensor devices use a wake-up radio. Specifically, the sensor devices use a wake-up radio to activate a network interface only in the cells allocated for beacon reception and data transmission. The simulation results showed that the proposed scheme exhibited better performance in terms of delay and energy consumption compared to the existing scheme.

Fabrication of High Power $Al_{0.07}$$Ga_{0.93}$As Laser Diode Array) (고출력 $Al_{0.07}$$Ga_{0.93}$As 레이저 다이오드 어레이 제작)

  • 손노진;박성수;안정작;권오대;계용찬;정지채;최영수;강응철;김재기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.10
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    • pp.43-50
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    • 1995
  • A laser diode(LD) structure consisting of a single 150$\AA$ $Al_{0.07}$Ga$_{0.93}$As quantum well active region operating at ${\lambda}$=809nm, cladded with an AlGaAs graded-index separate confinement heterostructure, has bes been grown by MOCVD. Temperature coefficient of wavelength is approximately 0.2nm $^{\circ}C$ for the diode. The active aperture consists of five emitters separated from each other by means of SiO$_{2}$ deposition and stripe formation, which creates insulating regions that channel the current to 100-$\mu$m-wide stripes placed on 450-$\mu$m centers. From a typical uncoated LD, the output power of 0.8W has been obtained at a 1$\mu$s, 1kHz pulsed current level of 2.0$\AA$, which results in about 64% external quantum efficiency. The threshold current density is 736A/cm$^{2}$ for the case of 500$\mu$m cavity length LD's. The measure of an internal quantum efficiency was 75.8% and the internal loss 4.83$cm^{-1}$ . Finally, 3.1W output power has been obtained at a 1$\mu$s, 1kHz pulsed current level of 9A from the 500$\mu$m-aperture LD array with 460-$\mu$m- cavity length.

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Introduction and Application of 3D Terrestrial Laser Scanning for Estimating Physical Structurers of Vegetation in the Channel (하도 내 식생의 물리적 구조를 산정하기 위한 3차원 지상 레이저 스캐닝의 도입 및 활용)

  • Jang, Eun-kyung;Ahn, Myeonghui;Ji, Un
    • Ecology and Resilient Infrastructure
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    • v.7 no.2
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    • pp.90-96
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    • 2020
  • Recently, a method that applies laser scanning (LS) that acquires vegetation information such as the vegetation habitat area and the size of vegetation in a point cloud format has been proposed. When LS is used to investigate the physical shape of vegetation, it has the advantage of more accurate and rapid information acquisition. However, to examine uncertainties that may arise during measurement or post-processing, the process of adjusting the data by the actual data is necessary. Therefore, in this study, the physical structure of stems, branches, and leaves of woody vegetation in an artificially formed river channel was manually investigated. The obtained results then compared with the information acquired using the three-dimensional terrestrial laser scanning (3D TLS) method, which repeatedly scanned the target vegetation in various directions to obtain relevant information with improved precision. The analysis demonstrated a negligible difference between the measurements for the diameters of vegetation and the length of stems; however, in the case of branch length measurement, a relatively more significant difference was observed. It is because the implementation of point cloud information limits the precise differentiation between branches and leaves in the canopy area.

Comparative analysis of turbulence models in hydraulic jumps

  • Lobosco, Raquel J.;da Fonseca, David O.;Jannuzzia, Graziella M.F.;Costa, Necesio G.
    • Coupled systems mechanics
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    • v.8 no.4
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    • pp.339-350
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    • 2019
  • A numerical simulation of the incompressible multiphase hydraulic jump flow was performed to compare the interface prediction through the use of the three RANS turbulence models: $k-{\varepsilon}$, $RNGk-{\varepsilon}$ and SST $k-{\omega}$. A three dimensional no submerged hydraulic jump and a two dimensional submerged hydraulic jump were modeled. Both the geometry and the mesh were created using the open source Gmsh code. The project's geometry consists of a rectangular channel with length and height differences between the two dimensional and three dimensional simulations. Uniform hexahedral cells were used for the mesh. Three refining meshes were constructed to allow to verify simulation convergence. The Volume of Fluid (abbr. VOF) method was used for treatment of the air-water surface. The turbulence models were evaluated in three distinct set up configurations to provide a greater accuracy in the flow representation. In the two-dimensional analysis of a submerged hydraulic jump simulation, the turbulence model RNG RNG $k-{\varepsilon}$ provided a better interface adjust with the experimental results than the model $k-{\varepsilon}$ and SST $k-{\omega}$. In the three-dimensional simulation of a no-submerged hydraulic jump the k-# showed better results than the SST $k-{\omega}$ and RNG $k-{\varepsilon}$ capturing the height and length of the ledge with a better fit with the experimental results.

The Effects of Corner Transistors in STI-isolated SOI MOSFETs

  • Cho, Seong-Jae;Kim, Tae-Hun;Park, Il-Han;Jeong, Yong-Sang;Lee, Jong-Duk;Shin, Hyung-Cheol;Park, Byung-Gook
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.615-618
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    • 2005
  • In this work, the effects of corner transistors in SOI MOSFETs were investigated. We fabricated SOI MOSFETs with various widths and a fixed length and characterized them. The SOI thickness was $4000{\AA}$ and the buried oxide(BOX) thickness was $4000{\AA}$. The isolation of active region was simply done by silicon etching and TEOS sidewall formation. Several undesirable characteristics have been reported for LOCOS isolation in fabrication on SOI wafers so far. Although we used an STI-like process instead of LOCOS, there were still a couple of abnormal phenomena such as kinks and double humps in drain current. Above all, we investigated the location of the parasitic transistors and found that they were at the corners of the SOI in width direction by high-resolution SEM inspection. It turned out that their characteristics are strongly dependent on the channel width. We made a contact pad through which we can control the body potential and figured out the dependency of operation on the body potential. The double humps became more prominent as the body bias went more negative until the full depletion of the channel where the threshold voltage shift did not occur any more. Through these works, we could get insights on the process that can reduce the effects of corner transistors in SOI MOSFETs, and several possible solutions are suggested at the end.

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