• Title/Summary/Keyword: Length of a channel

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Subthreshold Characteristics of a 50 nm Impact Ionization MOS Transistor (50 nm Impact Ionization MOS 소자의 Subthreshold 특성)

  • Yoon, Jee-Young;Ryu, Jang-Woo;Jung, Min-Chul;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.105-106
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    • 2005
  • The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

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Development of a GIUH Model Based on River Fractal Characteristics (하천의 프랙탈 특성을 고려한 지형학적 순간단위도 개발(I))

  • Hong, Il-Pyo;Go, Jae-Ung
    • Journal of Korea Water Resources Association
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    • v.32 no.5
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    • pp.565-577
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    • 1999
  • The geometric patterns of a stream network in a drainage basin can be viewed as a "fractal" with fractal dimensions. Fractals provide a mathematical framework for treatment of irregular, ostensively complex shapes that show similar patterns or geometric characteristics over a range of scale. GIUH (Geomorphological Instantaneous Unit Hydrograph) is based on the hydrologic response of surface runoff in a catchment basin. This model incorporates geomorphologic parameters of a basin using Horton's order ratios. For an ordered drainage system, the fractal dimensions can be derived from Horton's laws of stream numbers, stream lengths and stream areas. In this paper, a fractal approach, which is leading to representation of a 2-parameter Gamma distribution type GIUH, has been carried out to incorporate the self similarity of the channel networks based on the high correlations between the Horton's order ratios. The shape and scale parameter of the GIUH-Nash model of IUH in terms of Horton's order ratios of a catchment proposed by Rosso(l984J are simplified by applying the fractal dimension of main stream length and channel network of a river basin. basin.

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Numerical Analysis of Heat Transfer in the Ribbed Channel Inserted with Tape (테이퍼가 설치된 리브(rib)이 있는 채널의 열전달에 대한 수치해석)

  • Kang, Ho-Keun;Ahn, Soo-Whan
    • Journal of Advanced Marine Engineering and Technology
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    • v.34 no.5
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    • pp.638-644
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    • 2010
  • Numerical predictions of a fully developed turbulent flow through a square duct ($30mm{\times}30mm$) with twisted tape inserts and with twisted tape plus interrupted ribs are respectively conducted to investigate regionally averaged heat transfer and flow patterns. A rib height-to-channel hydraulic diameter(e/$D_h$) of 0.067 and a lengthto-hydraulic diameter(L/$D_h$) of 30 are considered at Reynolds number ranging 8,900 to 29,000. The interrupted ribs are axially arranged on the bottom wall. The twisted tape is 0.1 mm thick carbon steel sheet with diameter of 28 mm, length of 900 mm, and 2.5 turns. Each wall of the square channel is composed of isolated aluminum sections. Two heating conditions are investigated for test channels with twisted tape inserts and rib turbulators: (1) electric heat uniformly applied to four side walls of the square duct, and (2) electric heat uniformly applied to two opposite walls of the square channel. The results show that uneven surface heating enhances the heat transfer coefficient over uniform heating conditions, and significant improvements can be achieved with twisted tape inserts plus interrupted ribs.

A Study on the Fabrication of p-type poly-Si Thin Film Transistor (TFT) Using Sequential Lateral Solidification(SLS) (SLS 공정을 이용한 p-type poly-Si TFT 제작에 관한 연구)

  • Lee, Yun-Jae;Park, Jeong-Ho;Kim, Dong-Hwan
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.6
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    • pp.229-235
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    • 2002
  • This paper presents the fabrication of polycrystalline thin film transistor(TFT) using sequential lateral solidification(SLS) of amorphous silicon. The fabricated SLS TFT showed high Performance suitable for active matrix liquid crystal display(AMLCD). The SLS process involves (1) a complete melting of selected area via irradiation through a patterned mask, and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the super lateral growth(SLG) distance so that lateral growth extended over a number of iterative steps. The SLS experiment was performed with 550$\AA$ a-Si using 308nm XeCl laser having $2\mu\textrm{m}$ width. Irradiated laser energy density is 310mJ/$\textrm{cm}^2$ and pulse duration time was 25ns. The translation distance was 0.6$\mu$m/pulse, 0.8$\mu$m/pulse respectively. As a result, a directly solidified grain was obtained. Thin film transistors (TFTs) were fabricated on the poly-Si film made by SLS process. The characteristics of fabricated SLS p -type poly-Si TFT device with 2$\mu\textrm{m}$ channel width and 2$\mu\textrm{m}$ channel length showed the mobility of 115.5$\textrm{cm}^2$/V.s, the threshold voltage of -1.78V, subthreshold slope of 0.29V/dec, $I_{off}$ current of 7$\times$10$^{-l4}$A at $V_{DS}$ =-0.1V and $I_{on}$ / $I_{off}$ ratio of 2.4$\times$10$^{7}$ at $V_{DS}$ =-0.1V. As a result, SLS TFT showed superior characteristics to conventional poly-Si TFTs with identical geometry.y.y.y.

Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications

  • Yoon, Young Jun;Seo, Jae Hwa;Cho, Seongjae;Kwon, Hyuck-In;Lee, Jung-Hee;Kang, In Man
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.172-178
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    • 2016
  • In this paper, we propose a sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor (TFET) with vertical band-to-band tunneling (BBT) operation for ultra-low-power (LP) applications. We design a stack structure that is based on the Ge/GaAs heterojunction to realize the vertical BBT operation. The use of vertical BBT operations in devices results in excellent subthreshold characteristics with a reduction in the drain-induced barrier thinning (DIBT) phenomenon. The proposed device with a channel length ($L_{ch}$) of 5 nm exhibits outstanding LP performance with a subthreshold swing (S) of 29.1 mV/dec and an off-state current ($I_{off}$) of $1.12{\times}10^{-11}A/{\mu}m$. In addition, the use of the highk spacer dielectric $HfO_2$ improves the on-state current ($I_{on}$) with an intrinsic delay time (${\tau}$) because of a higher fringing field. We demonstrate a sub-10 nm LP switching device that realizes a good S and lower $I_{off}$ at a lower supply voltage ($V_{DD}$) of 0.2 V.

Development of a Long-slope Water Harvesting System in Natural Channel for Drought Mitigation in Upland (밭작물 가뭄피해 경감을 위한 소류천 유출수 저수 시스템 개발)

  • Kim, Youngjin;Choi, Yonghun;Lee, Sangbong;Kim, Minyoung;Jeon, Jonggil
    • Journal of The Korean Society of Agricultural Engineers
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    • v.62 no.6
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    • pp.111-118
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    • 2020
  • This study developed a rainwater harvesting system for the irrigation of upland on sloping area. The assessment of water supply capacity was evaluated in farm field experience. This system consists of a water catchment device and a collapsible storage tank. The water catchment device was designed to collect runoff water in natural channel of 500 mm width into a pipe of 50 mm inner diameter. The device has funnel-shaped plan and cross-section of square. The storage capacity of the collapsible water tank was caculated to meet the water demand for irrigation in 30 a cultivated land for 10-year frequancy drought. The tank has a cuboid shape with a capacity of 30 ㎥, 5 m in width and length, 1.2 m in height. This system can supply 92% of the water required for drop irrigation of red pepper and 88% of the water required for drop irrigation of onions in 30 a cultivation land during the month of May and June. In the case of 16-dry days of 10-years frequency, this system is capable to irrigate 100% of required water for red pepper and onion, 76.7% of required water for Omija (Schisandra chinensis), and 51.5% of required water for autumn kimchi cabbage.

A Study on the Hydroulic Phenomenon at the Douvstream Channel of the Drainage Sluice (배수갑문 물받이의 수리현상에 관한 연구)

  • 이희영
    • Magazine of the Korean Society of Agricultural Engineers
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    • v.18 no.4
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    • pp.4218-4225
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    • 1976
  • To insure the safety of the drainage sluice, topogrophical change due to erosion as well as capability of discharging the design flow in a very important factor. In consideration of the fact that the drainage sluice is built in the sea, its construction has many topographically restricted problems and naturally requires a completeness of research and experiment. This thesis is a comparative and analytic study of discharging flow acting on the erosion at the bottom of the structure on the basis of the measured velocity on the downstream channel of the drainage sluice. (1) The measured velocity shows a little higher values than the computed velocity, because the measured velocity was observed at the surface of the stream. There fore, it is reasonable that the compated velocity should be taken in this study. (2) The field observation was conducted to have the measurement of the flow velocity without surveying the area of flow. Therefore, the coefficient of discharge could not be computed. The survey of the area of flow is planned to be conducted along with the measurement of the flow velocity. (3) The apron of the drainage sluice is free discharging type and it was designed to be about 80m in length less than it should be. (4) The apron of free flow discharging type should have a solid foundation to protect the structure by preventing erosion damage to upstream and downstream channels against weathering of rock and strong torrent. Whether free flow discharging type or energy-dissipating type is best chosen depends on the topographical condition of the forage site, therefore, there would be a comparative study before the final decision was made about the protrection for the structure. (5) It is considered to be appropriate that the design and construction of the drainage sluice should have a complete study which is based on hydraulie model test before the type of protection is decided. (6) It is much requested that a variety of experiment equipments be installed and observed to study the protection for the drainage sluice.

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Rat Peripheral Nerve Regeneration Using Nerve Guidance Channel by Porcine Small Intestinal Submucosa

  • Yi, Jin-Seok;Lee, Hyung-Jin;Lee, Hong-Jae;Lee, Il-Woo;Yang, Ji-Ho
    • Journal of Korean Neurosurgical Society
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    • v.53 no.2
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    • pp.65-71
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    • 2013
  • Objective : In order to develop a novel nerve guidance channel using porcine small intestinal submucosa (SIS) for nerve regeneration, we investigated the possibility of SIS, a tissue consisting of acellular collagen material without cellular immunogenicity, and containing many kinds of growth factors, as a natural material with a new bioactive functionality. Methods : Left sciatic nerves were cut 5 mm in length, in 14 Sprague-Dawley rats. Grafts between the cut nerve ends were performed with a silicone tube (Silicon group, n=7) and rolled porcine SIS (SIS group, n=7). All rats underwent a motor function test and an electromyography (EMG) study on 4 and 10 weeks after grafting. After last EMG studies, the grafts, including proximal and distal nerve segments, were retrieved for histological analysis. Results : Foot ulcers, due to hypesthesia, were fewer in SIS group than in Silicon group. The run time tests for motor function study were 2.67 seconds in Silicon group and 5.92 seconds in SIS group. Rats in SIS group showed a better EMG response for distal motor latency and amplitude than in Silicon group. Histologically, all grafts contained some axons and myelination. However, the number of axons and the degree of myelination were significantly higher in SIS group than Silicon group. Conclusion : These results show that the porcine SIS was an excellent option as a natural biomaterial for peripheral nerve regeneration since this material contains many kinds of nerve growth factors. Furthermore, it could be used as a biocompatible barrier covering neural tissue.

A Study on the Low Power Line Modulation and Power Line Channel Modeling (저압 전력선 통신 변조 기법 및 전력선 채널 특성)

  • Kand Duk-Ha;Heo Yoon-Seok;Cho Ki-Hyung;Lee Dae-Young
    • The Journal of Information Technology
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    • v.5 no.4
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    • pp.1-8
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    • 2002
  • This thesis is about power line communication(PLC) over the low voltage grid. The main advantage with power line communication is the use of an existing infrastructure. The PLC channel can be modeled as having multi-path propagation with frequency-selective fading, typical power lines exhibit signal attenuation increasing with length and frequency. OFDM(Orthogonal Frequency Division Multiplexing) is a modulation technique where multiple low data rate carriers are combined by a transmitter to form a composite high data rate transmission. To implement the multiple carrier scheme using a bank of parallel modulators would not be very efficient in analog hardware. Each carrier in an OFDM is a sinusoid with a frequency that is an integer multiple of a base or fundamental sinusoid frequency. Therefore, each carrier is a like a Fourier series component of the composite signal. In fact, it will be shown later that an OFDM signal is created in the frequency domain, and then transformed into the time domain via the Discrete Fourier Transform(DFT).

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a-Si:H TFT Using Ferroelectrics as a Gate Insulator

  • Hur, Chang-Wu;Kung Sung;Jung-Soo, Youk;Sangook Moon;Kim, Jung-Tae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2004.05a
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    • pp.53-56
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    • 2004
  • The a-Si:H TFT using ferroelectric of SrTi $O_3$as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$and S $i_3$ $N_4$. Ferroelctric increases on-current, decreases thresh old voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, refractive index of 1.8~2.0 and resistivity of 10$^{13}$ - 10$^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60~100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8~20${\mu}{\textrm}{m}$ and channel width of 80~200${\mu}{\textrm}{m}$. And it shows that drain current is 3.4$mutextrm{A}$ at 20 gate voltage, $I_{on}$ / $I_{off}$ is a ratio of 10$^{5}$ - 10$^{8}$ and $V_{th}$ is 4~5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $mutextrm{A}$ at 20 gate voltage and $V_{th}$ is 5~6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.zed.d.

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