• Horticultural Science & Technology
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• v.29 no.4
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• pp.279-287
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• 2011

This research surveyed the effect of endogenous gibberellins (GA), abscisic acid (ABA), jasmonic acid (JA) and sugar contents on bulb development and secondary growth in the southern type of garlic (Allium sativum L.) cv. Sangdongmaneul and cv. Namdomaneul of Korea. Sangdongmaneul and Namdomaneul showed endogenouse GA, ABA, JA and sugar contents were significantly different in patterns with different cultivar. GA and JA contents of southern type of garlic reached maximum before bulb differentiation and then their contents were decreased. On the other hand, ABA contents gradually increased from bulbing (leaf sheath: 6.58-18.59 $ng{\cdot}g^{-1}$ DW) start. GA contents in Sangdongmaneul and Namdomaneul were not significantly different from each other. These results revealed that GA contents were not affected by secondary growth of garlic. While JA contents (33.0-76.16 $ng{\cdot}g^{-1}$ DW) of Namdomaneul were higher than Sandongmaneul so our results suggest that JA suppressed development of secondary growth of garlic. Total sugar contents of Sandongmaneul and Namdomaneul were not significantly different but total sugar contents were gradually increased after bulb differentiation in Sandongmaneul and Namdomaneul.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.313-320
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• 2013

The $AlAs_xSb_{1-x}$ step-graded buffer (SGB) layer was grown on the Silicon (Si) substrate to overcome lattice mismatch between Si substrate and $Al_{0.3}Ga_{0.7}As$/GaAs multiple quantum wells (MQWs). The value of root-mean-square (RMS) surface roughness for 5 nm-thick GaAs grown on $AlAs_xSb_{1-x}$ step-graded buffer layer was ~1.7 nm. $Al_{0.3}Ga_{0.7}As$/GaAs MQWs with AlAs/GaAs short period superlattice (SPS) were formed on the $AlAs_xSb_{1-x}$/Si substrate. Photoluminescence (PL) peak at 10 K for the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure showed relatively low intensity at ~813 nm. The RMS surface roughness of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure was ~42.9 nm. The crystal defects were observed on the cross-sectional transmission electron microscope (TEM) images of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure. The decrease of PL intensity and increase of RMS surface roughness would be due to the formation of the crystal defects.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.310-310
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• 2014

ZnO박막은 넓은 밴드갭 (3.37 eV), 높은 여기 결합 에너지 (60 meV)를 가지는 육방정계 우르자이트(hexagonal wurtzite) 결정구조를 가지는 II-VI족 화합물 반도체로, 가시광선 영역에서의 높은 광학적 투과도 특성과 자외선 파장에서 발광이 가능한 장점을 가진다. 최근, ZnO박막 성장 기술이 상당히 발전하였지만, 아직까지도 p-형 ZnO박막 성장 기술은 충분히 발전하지 못하여 ZnO의 동종접합 LED는 아직 상용화되지 않고 있는 실정이다. 따라서, 많은 연구 그룹에서 p-GaN, p-SiC, p-diamond, p-Si 등과 같은 p-type 물질 위에 n-type ZnO를 성장시킨 이종접합 다이오드가 연구되고 있다. 특히, p-GaN의 경우 ZnO와의 격자 불일치 정도가 1.8 % 정도로 작다는 장점이 있어 많은 연구가 이루어 지고 있다. 일반적으로 c-축을 기반으로 한 극성ZnO 발광다이오드에서는 자발 분극과 압전 분극 현상에 의해 밴드 휨 현상이 발생하고, 이로 인해 전자와 정공의 공간적 분리가 발생하게 되어 발광 재결합 효율이 제한되고 있다는 문제가 발생한다. 따라서, 본 연구에서는 극성 (0001) 및 비극성 (10-10) n-ZnO/p-GaN 발광다이오드의 성장 및 발광 소자의 전기 및 광학적 특성에 대한 비교 연구를 진행하였다. 금속유기 화학증착법을 이용하여 c-면과 m-면 위에 각각 극성 (0001) 및 반극성 (11-22) GaN박막을 $2.0{\mu}m$ 성장시킨 후 Mg 도핑을 한 p-GaN을 $0.4{\mu}m$ 성장시켜 각각 극성 (0001) 및 반극성 (11-22) p-GaN템플릿을 준비하였다. 이후, N2분위기 $700^{\circ}C$에서 3분동안 열처리를 통하여 Mg 도펀트를 활성화시킨 후 원자층 증착법을 이용하여 동시에 극성 및 반극성 p-GaN의 위에 n-ZnO를 $0.11{\mu}m$ 성장시켜 이종접합구조의 발광소자를 형성하였다. 이때, 극성 (0001) p-GaN 위에는 극성의 n-ZnO 박막이 성장되는 반면, 반극성 (11-22) p-GaN 위에는 비극성 (10-10) n-ZnO 박막이 성장됨을 HR-XRD로 확인하였다. 극성 (0001) n-ZnO/p-GaN이종접합 발광다이오드의 전계 발광 스펙트럼에서는 430 nm 와 550 nm의 두 피크가 동시에 관찰되었다. 430 nm 대역의 파장은 p-GaN의 깊은 준위에서 발광하는 것으로 판단되며, 550 nm 피크 영역은 ZnO의 깊은 준위에서 발광되는 것으로 판단된다. 특히, 10 mA 이하의 저전류 주입시 550 nm의 피크는 430 nm 영역보다 더 큰 발광세기를 나타내고 있다. 하지만, 10 mA 이상의 전류주입 하에서는 550 nm의 영역보다 430 nm의 발광세기가 더욱 증가하는 것을 확인할 수 있었다. 이것은 ZnO의 밴드갭이 3.37 eV로 GaN의 밴드갭인 3.4 eV다 작기 때문에 우선적으로 ZnO의 깊은 준위에서 발광하는 550 nm가 더욱 우세하지만, 지속적으로 전류주입 증가에 따른 캐리어 증가시 n-ZnO에서 p-GaN로 전자가 넘어가며 p-GaN의 깊은 준위인 430 nm에서의 피크가 우세해지는 것으로 판단된다. 반면에, 비극성 (10-10) n-ZnO/반극성 (11-22) p-GaN 구조의 이종접합 발광다이오드로 전계 발광 스펙트럼에서는 극성 (0001) n-ZnO/p-GaN에 비하여 매우 낮은 전계 발광 세기를 나타내고 있다. 이는, 극성 n-ZnO/p-GaN에 비하여 비극성 n-ZnO/반극성 p-GaN의 결정성이 상대적으로 낮기 때문으로 판단된다. 또한, 20 mA 영역에서도 510 nm의 깊은 준위와 430 nm의 발광이 관찰되었다. 동일한 20 mA하에서 두 피크의 발광세기를 비교하면 430 nm의 영역은 극성 n-ZnO/p-GaN에 비하여 매우 낮은 값을 나타내고 있다. 이는 반극성 (11-22) p-GaN의 경우 극성 (0001) p-GaN에 비하여 우수한 p-형 특성에 기인한 것으로 판단된다.

• The Korean Journal of Nuclear Medicine
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• v.30 no.1
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• pp.145-151
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• 1996

Pathways both mediated by and independent of transferrin(Tf) and the TfR have been described for the accumulation of iron. Although it is not clear whether the same systems take up iron and gallium, these pathways may suggest the contention that uptake of Ga-67 can, in fact, occur by both Tf-independent and Tf-dependent systems and may share with Fe-59 in part the same mechanism for uptake. The predominant system by which uptake of both radiometals occurs may be different in the degree of the transformation of tumor. Transformed(MMSV/3T3) and untransformed(BALB/3T3) cells were incubated with luM of Ga-67-citrate of Fe-59-chloride for 15 min. at $37^{\circ}C$ in either the presence or absence of Tf. After then, the monolayers were washed with HBSS or PBS, and the cells were solubilized in 1% SDS for gamma well counting and protein determinations. There were similarities, as well as differences, in the pattern of uptake of Fe-59 and Ga-67 presented both in ionic from and as bound to Tf. Both radiometals appeared gain to cells in either ionic or Tf-bound forms. Transformed cells appeared to accumulate more radiometal, either Ga-67 or Fe-59 in the presence of Tf than do the their untransforemd counterparts. Conversly the presentation of either radiometal in ionic form resulted in significantly greater accumulation of metal by the untransformed cells than those transformed. The efficiency for uptake of Ga-67 or Fe-59 in the absence of Tf was greater than for uptake of the Ga-Tf or Fe-Tf. However, the magnitude of difference in efficiency of uptake was greater for Fe-59(10-fold) than for Ga-67 (3-fold). Our results Supports the theory that both Tf-independent and Tf-dependent systems for the uptake of Ga-67 both systems operate oppositely between transformed cells and those untransformed, with uptake by the predominating in transformed cells by the Tf-mediated system and in untransformed cells by the Tf-independent. The uptake of Ga-67 by tumor may share with Fe-59 in part the same mechanism.

• The Journal of the Korean dental association
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• v.37 no.5 s.360
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• pp.305-309
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• 1999

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.63-64
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• 2005

This paper proposed a miniaturization passive element employing the multiple microstrip line. As a result of this method, we realized the transmission line miniaturized. The applying structure designed and evaluated a power divider on GaAS MMIC circuit. It draws a plan in a center Frequency as the observation could do good characteristic.

• Proceedings of the SAREK Conference
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• 2005.06a
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• pp.98-98
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.111-111
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• 2005

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.6
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• pp.467-478
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• 2019

This paper describes the development and measurement results of a wide-band planar active phase array antenna system for an electronic warfare jamming transmitter. The system is designed as an $8{\times}8$ triangular lattice array using a $45^{\circ}$ slant wide-band antenna. The 64-element transmission channel is composed of a wide-band gallium nitride(GaN) solid state power amplifier and a gallium arsenide(GaAs) multi-function core chip(MFC). Each GaAs MFC includes a true-time delay circuit to avoid a wide-band beam squint, a digital attenuator, and a GaAs drive amplifier to electronically steer the transmitted beam over a ${\pm}45^{\circ}$ azimuth angle and ${\pm}25^{\circ}$ elevation angle scan. Measurement of the transmitted beam pattern is conducted using a near-field measurement facility. The EIRP of the designed system, which is 9.8 dB more than the target EIRP performance(P), and the ${\pm}45^{\circ}$ azimuth and ${\pm}25^{\circ}$ elevation beam steering fulfill the desired specifications.