• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.411-418
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• 1998

The thickness dependence of stress electric filed oxide currents has been measured in oxides with thicknesses between 10 nm and 80 nm. The oxide currents were shown to be composed of stress current and transient current. The stress current was composed of stress induced leakage current and dc current. The stress current was caused by trap assisted tunneling through the oxide. The transient current was caused by the tunneling charging and discharging of the trap in the interfaces. The stress current was used to estimate to the limitations on oxide thicknesses. The transient current was used to the data retention in memory devices.

• Proceedings of the KIEE Conference
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• 2009.04a
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• pp.205-207
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• 2009

In 2007, 9,128 fires are attributed to electrical equipments. These fires resulted in 29 deaths and 262 injuries. Arc-faults were one of the major causes of these fires. When an unintended arc-fault occurs, it generates intense heat that can easily ignite surrounding combustibles. Conventional circuit breakers only respond to overloads, short circuits, and leakage currents. Therefore, the breakers do not protect against arcing conditions. This paper presents results obtained in experiments on ignition behavior of wire by series arc fault currents and techniques developed to detect the arc-faults. The developed technique was tested after installation to make sure they are working properly and protecting the circuit. If the developed arc detecting technique is applied, the electrical fires caused by an arc-fault can be reduced.

• Restorative Dentistry and Endodontics
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• v.20 no.1
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• pp.164-172
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• 1995

The purpose of this electrochemical study was to determine and compare the sealing effect of three commonly used calcium hydroxide-based sealers (Sealapex, Apexit, and CRCS) with that of Roth 801 which is a ZOE-based sealer. 64 single rooted teeth were used in this experiment. After removing the crown, the teeth were devided into 4 groups of 15 in each and obturated with gutta-percha and experimental sealers. 4 teeth were as controls(2 positive and 2 negative). The results were as follows : 1. During the observation period, all sealers showed varying degree of microleakage. 2. The mean leakage currents according to the electrochemical study of each group showed $0.418{\pm}0.006mV$ for Roth 801, $2.03{\pm}0.035mV$ for Sealapex, $3.33{\pm}0.069mV$ for Apxit and $6.48{\pm}0.097mV$ for CRCS group. The positive control group showed 600mV. 3. There were statistically significant difference in mean leakage among experimental groups. ZOE-typed Roth 801 sealer was the lowest, and Sealapex, Apexit, CRCS group in that order showed increased leakage(P<0.05). 4. Roth 801, Sealapex and Apexit group showed increasing leakage with time, but CRCS group showed stable or decreasing leakage tendency.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.5
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• pp.336-344
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• 2018

This study proposes a new PWM method for leakage current reduction and neutral point (NP) current control in three-phase three-level converter employed in bipolar DC distribution systems. The proposed PWM method uses medium vectors only when there is no need to control the NP current. Thus, common mode voltages are held constant to realize zero leakage current. Some space vectors that produce low-frequency common mode voltages are employed to minimize leakage currents when the average NP current needs to be a positive or negative value. The proposed space vector PWM is implemented based on barycentric coordinate. The validity of the proposed PWM method is verified by simulations and experiments.

• Journal of Advanced Navigation Technology
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• v.21 no.1
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• pp.107-112
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• 2017

In recent years, electric shock accidents due to electric leakage currents of household appliances such as computers, TVs, refrigerators, and LED lights are continuously occurring in homes and industrial buildings. And it is not easy to check the leakage current of each household appliances connected in parallel at the rear end of the module. In addition, the leakage current flowing through the path of the normal current other than the existing current leakage circuit breakers are installed in the distribution box, only the function to cut off the power when the leakage. Therefore, there are various disasters such as electric shock and fire caused by short circuit of household appliances, and the risk of such leakage current is seriously presented. In this paper, we propose a method to implement a leakage monitoring system that can be monitored at all times using Zigbee communication based on IEEE 80215.4, which has advantages in low power and low cost among short range wireless communication systems.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.6
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• pp.605-610
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• 2016

The ELCB(: Earth Leakage Circuit Breaker) is the only way being used to prevent accidents from happening caused by electrical disaster. However, the existing ELCB has a limit to prevent damages to life and property due to a electric fire and a human body electric shock caused by the resistive leakage current, because of detecting the total leakage current in the block range of 15mA~30mA. It also has problems such as reduced productivity and reliability due to malfunctions by capacitive leakage currents. In this study, we have implemented the algorithm for the resistive leakage current detection technique and developed the resistive leakage current detection module based on a MSP430 processor, 16bit signal processor and this module can be operated in a desired block threshold within 0.03 seconds as specified in KS C 4613.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.164-169
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• 2008

The effects of the antisite related defects on the electronic structure of silica and the gate leakage current have been investigated using first-principles calculations. Energy levels related to the antisite defects in silicon dioxide have been introduced into the bandgap, which are nearly 2.0 eV from the top of the valence band. Combining with the electronic structures calculated from first-principles simulations, tunneling currents through the silica layer with antisite defects have been calculated. The tunneling current calculations show that the hole tunneling currents assisted by the antisite defects will be dominant at low oxide field whereas the electron direct tunneling current will be dominant at high oxide field. With increased thickness of the defect layer, the threshold point where the hole tunneling current assisted by antisite defects in silica is equal to the electron direct tunneling current extends to higher oxide field.

• Proceedings of the KIEE Conference
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• 2007.10c
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• pp.217-219
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• 2007

With the wide spread of direct current(DC) electric railroads in Korea, the stray current or leakage currents from negative return rails become a pending problem to the safety of nearby underground Infrastructures. The most widely used mitigation method for this interference is the stray current drainage method, which connects the underground metallic structures to the rails with diodes (polarized drainage) or thyristor (forced drainage). This method, however, inherently possesses some drawbacks such as an increase of total leakage torrents from rails, expansion of interference zone, etc. In order to resolve these drawbacks, we developed a rapid potential-controled rectifier and applied to a depot area where stray current inference is very severe. The effect of this method was analyzed from the field tell data and we suggest this method can be an excellent alternative to the drainage-bond-based mitigation methods.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.261-266
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• 1995

In this study, PZT solutions added impurities of Yttrium acetate were prepared by sol-gel processing and were deposited on Pt/ $SiO_{2}$/Si substrates at 5000 rpm for 20 sec. using spin-coating method. Coated films were annealed at 700-750.deg. C for 30 min. using conventional furnace method. Variations of the crystallographic structure and microstructure of PZT thin films with adding impurities were observed using XRD and SEM, and the electrical properties, such as relative permittivity, tan .delta., hysteresis curves and leakage currents, were measured. As the yttrium contents were increased, the remanent polarization and coercive field were decreased. Variations of remanent polarizations and coercive fields of pure and yttrium doped specimens according to polarization reversal cycles were observed using hysteresis measurement. PZT thin films added $Y^{3+}$ ions were completely crystallized at 750.deg. C. $Y^{3+}$ ions, as donor impurity, substituted Pb.sup 2+/ ions located at A-site of perovskite structure. By substitution of $Y^{3+}$ ions, leakage currents became less by decreasing the space charges. Degradation of remanent polarizations of Yttrium added specimens after fatigue was not observed and coercive fields increased more than those of pure PZT thin films.

• Korean Journal of Materials Research
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• v.15 no.9
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• pp.613-619
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• 2005

The ever increasing popularity and acceptance in the market place of portable systems, such as cell phones, PDA, notebook PC, etc., are fueling effects in further miniaturizing and lowering power consumption in these systems. The dynamic power consumption due to the CPU activities and the static power consumption due to leakage currents are two major sources of power consumption. Smaller devices and a lower de voltage lead to reducing the power requirement, while better insulation and isolation of devices lead to reducing leakage currents. All these can be harnessed in the SOI (silicon-on-insulator) technology. In this study, the key aspects of the SOI technology, mainly device electrical properties and device processing steps, are briefly reviewed. The interesting materials issues, such as SOI structure formation and SOI wafer fabrication methods, are then surveyed. In particular, the recent technological innovations in two major SOI wafer fabrication methods, namely wafer bonding and SIMOX, are explored and compared in depth. The results of the study are nixed in that, although the quality of the SOI structures has shown great improvements, the processing steps are still found to be too complex. Between the two methods, no clear winner has yet emerged in terms of the product quality and cost considerations.