• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2166-2168
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• 2005

This paper presents the frequency - dependent characteristics of leakage currents flowing through ZnO varistor. The leakage current - voltage (V-I) characteristic curves of the commercial ZnO varistor were measured. The resistive leakage current was increased with increasing the magnitude and frequency of the applied voltage in the low conduction region. The power losses of ZnO varistor increase as the frequency of applied voltage increases, because of the dielectric loss related to the frequency of the test voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.478-479
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• 2007

Many electrical fires are occurred by leakage currents and sparks generated by a short circuit. Earth leakage circuit breakers (ELCBs) should be tripped at the moment of the faults mentioned above. In this paper, we described the tripping characteristics of ELCBs against parallel arcing faults. A diesel engine generator with the capacity of 375 kVA source was adopted to provide enough large current when a parallel arcing occurred. The experimental results showed that most ELCBs we experimented were not tripped against short-duration pulse currents produced by parallel arcing because the ELCBs are designed to be tripped by a large current with long duration similar to power frequency.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.475-476
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• 2007

The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhibitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhibitory state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.371-371
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• 2010

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the MEMS implementation with nano structure. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41{\AA}$, which have the gate area $10^{-3}cm^2$. The stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Journal of information and communication convergence engineering
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• v.17 no.2
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• pp.161-165
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• 2019

In this study, zinc tin oxide (ZTO) thin-film transistors are researched to observe the correlation between the barrier potential and electrical properties. Although much research has been conducted on the electronic radiation from Schottky contacts in semiconductor devices, research on electronic radiation that occurs at voltages above the threshold voltage is lacking. Furthermore, the current phenomena occurring below the threshold voltage need to be studied. Bidirectional transistors exhibit current flows below the threshold voltage, and studying the characteristics of these currents can help understand the problems associated with leakage current. A factor that affects the stability of bidirectional transistors is the potential barrier to the Schottky contact. It has been confirmed that Schottky contacts increase the efficiency of the element in semiconductor devices, by cutting off the leakage current, and that the recombination at the PN junction is closely related to the Schottky contacts. The bidirectional characteristics of the transistors are controlled by the space-charge limiting currents generated by the barrier potentials of the SiOC insulated film. Space-charge limiting currents caused by the tunneling phenomenon or quantum effect are new conduction mechanisms in semiconductors, and are different from the leakage current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.169-175
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• 2006

This study investigated variation leakage current maximum value and waveform considering applied voltage phase angel by simulating three environmental conditions, such as fog, salt fog, and kaolin contamination .As the result of applied voltage phase angel characteristics, leakage currents presented almost in phases in the early stage regardless of environmental conditions just after applying the voltage, and the phase of leakage currents certain phase lags for the discharge of the applied voltage when surface discharges occurred due to the continuous environmental contamination. In addition, the difference in phase significantly increased according to the intensity of discharges. The change in distortion rates according to the environmental contamination presented a nearly same level just after applying the voltage. The distortion rate of third harmonic for the fundamental wave presented by the order of fog>salt fog>kaolin when surface discharges occurred due to the applied voltage for certain continued periods. In the case of the fog and salt fog, the scale of spectrums decreased according to the increase in frequencies from the results of the analysis of high frequencies. In addition, the even number frequency presented a relatively large level compared to the odd number frequency under the kaolin contamination.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1651-1653
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• 1999

Room Temperature Vulcanizing (RTV) Silicone Rubber has been widely used to coat porcelain insulator to prevent formation water filming on insulator surface. and RTV silicone rubber has water repellency to suppress leakage current and consequent flashover. RTV silicone rubber's surface has been degradated by outdoor condition such as dust, salt, and water. etc. ESDD(Equivalent Salt Deposit Density) and leakage currents are increased by polymer surface toughness and degradation. In this paper, we investigated relations of surface toughness, ESDD, and leakage currents.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.344-345
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• 2012

The Gate-Induced-Drain-Leakage (GIDL) current with channel doping and width dependence are characterized. The GIDL currents are found to increase in MOSFETs with higher channel doping levels and the observed GIDL current is generated by the band-to-band-tunneling (BTBT) of electron through the reverse-biased channel-to-drain p-n junction. A BTBT model is used to fit the measured GIDL currents under different channel-doping levels. Good agreement is obtained between the modeled results and experimental data. The increase of the GIDL current at narrower widths in mainly caused by the stronger gate field at the edge of the shallow trench isolation (STI). As channel width decreases, a larger portion of the GIDL current is generated at the channel-isolation edge. Therefore, the stronger gate field at the channel-isolation edge causes the total unit-width GIDL current to increases for narrow-width devices.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1933-1935
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• 2000

In this paper, it was tried to find out the minimum measurement range in the diagnosis of insulators using thermal image camera, for the purpose, leakage currents and thermal images were observed simultaneously for the insulators of which surface had been artificially polluted by salt fog. As a result. the surface temperature was increased with leakage currents. Also, the results of AC breakdown tests for the insulator of which temperature rise was more than 1 $^{\circ}C$ showed to be bad. Therefore, through the study on the relationship between leakage current, temperature rise and AC breakdown voltages, the diagnosis of the insulator in site would be possible using the thermal image camera.

• Journal of international Conference on Electrical Machines and Systems
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• v.2 no.3
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• pp.288-294
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• 2013

This paper introduces a novel method of on-line identifying the stator resistance and leakage inductance of dual three phase induction motor (DTPIM). According to the machine mathematical model, the stator resistance and leakage inductance can be estimated using the voltage and current values in harmonic subspace. Thus a method of voltage vector injection in harmonic subspace (VVIHS) is proposed, which causes currents in harmonic space. Then the errors between command and actual harmonic currents are utilized to regulate the machine parameters, including stator resistance and leakage inductance. The principle is presented and analyzed in detail. Experimental results prove the feasibility and validity of proposed method.