• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.29-32
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• 1998

The low level leakage currents in silicon oxides were investigated. The low level leakage currents were composed of a transient component and a do component. The transient component was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The do component was caused by trap assisted tunneling completely through the oxide. The low level leakage current was proportional to the number of traps generated in the oxides. The low level leakage current may be a trap charging and discharging current. The low level leakage current will affect data retention in EEPROM.

• Journal of the Korean Society of Safety
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• v.15 no.1
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• pp.93-99
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• 2000

This paper presents a study on the assessment of electrical fire hazards by electric circuits with leakage. The hazards are evaluated with the energy supplied by earth-leakage currents which flow in the circuits simulating the actual circuit of domestic premises. Also, operating time and current of ELB are measured by an experimental approach. A common specification of ELB used in this paper has a sensitivity of 30[mA] for leakage current working on the current-balance principle. Total charges and energy of leakage currents are calculated quantitatively by a theoretical approach and compared with the results obtained from experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.908-913
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• 2000

CoSi$_2$/p+/n diodes(bilayer diodes) were fabricated by using epitaxial CoSi$_2$grown from Co/Ti bilayer as a diffusion source. The I-V characteristics of p+/n diodes were measured and compared with those of diode made from Co monolayer (monolayer diode). Monolayer diodes showed typical p+n junction characteristics with the leakage current of as low as 10$^{-12}$ A and forward current 6-orders higher than the leakage current, when drive-in annealed at 90$0^{\circ}C$ for 20 sec.. On the other hand, bilayer diodes showed the Schottky-like behaviors with forward currents rather higher than those of monolyer diodes, but with too high leakage currents, when drive-in annealed at $700^{\circ}C$ or higher. However, when the annealing temperature was lowered to $700^{\circ}C$ and annealing time was increased to 60 sec., the leakage current was reduced to 10$^{-11}$ A and thus sho3wed typical diode characteristics. The high leakage currents for diodes annealed at $700^{\circ}C$ or higher was attributed to Shannon contacts formed due to unremoved Co-Ti-Si precipitates. But when annealed at 50$0^{\circ}C$, B ions diffused in the direction of the surface layer, and thus the leakage currents were reduced by removing Shannon contacts.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.5
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• pp.257-262
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• 2006

To evaluate the change in protective levels of zinc oxide (ZnO) varistors after the surge absorption, this paper investigated the effects of the number of injection and amplitude of lightning surges on the life of ZnO varistors for low voltages. Leakage currents flowing through ZnO varistors subjected to the $8/20{\mu}s$ impulse currents under 60 Hz AC voltages were measured. The surge simulator system ECAT that can generate $8/20{\mu}s$ impulse currents with a peak short-circuit of 5 $[kA_p]$ was used. The ZnO varistor leakage current increases with exposure to impulse current, and the number of injection of $8/20{\mu}s$ impulse currents to breakdown was inversely proportional to the amplitude of the test current. Behaviors of ZnO varistor leakage currents were strongly dependent on the number of injection and amplitude of $8/20{\mu}s$ impulse currents. ZnO varistors degrade gradually when subjected to impulse current, and the resistive leakage current flowing through ZnO varistors subjected to the $8/20{\mu}s$ impulse currents under 60 Hz AC voltages was significantly increased after a certain number of injection that is dependent on the amplitude of the test impulse current. As a result, the life of ZnO varistors mainly depends on the amplitude and occurrence frequency of lightning surges.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.4
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• pp.335-340
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• 2002

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4${\AA}$ and 814${\AA}$, which have the gate area $10^3cm^2$. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.32-37
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• 2003

In this paper, the trap characteristics of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4nm and 814nm, which have the gate area 10$\^$-3/ $\textrm{cm}^2$. The stress induced leakage currents will affect data retention, and the stress current and transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Proceedings of the KIPE Conference
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• 1998.11a
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• pp.18-22
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• 1998

A PWM inverter with an induction motor often has a problem with a high frequency leakage current that flows through stray capacitor between stator windings and a motor frame to ground. This paper presents an equivalent circuit for high frequency leakage currents in PWM inverter feeding an induction motor, which forms an LCR series resonant circuit. A conventional common mode ckoke or reactor in series between the ac terminals of a PWM inverter and those of an ac motor is not effective to reduce the rms and average values of the leakage current, but effective to reduce the peak value. Furthermore, this paper proposes a leakage current damper which is different in damping principle from the conventional common mode choke. It is shown theoretically and experimentally that the leakage current damper is able to reduce the rms value of the leakage current to 25%, where the core used in the leakage current damper is smaller than that of the conventional common-mode choke

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.4
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• pp.79-85
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• 2009

This paper describes the degradation properties of ZnO surge arresters impressed by lightning impulse currents. To investigate the deterioration behaviors of ZnO surge arresters due to lightning surges, the 8/20[${\mu}s$], 2.5[kA] standard lightning impulse currents were injected to the ZnO surge arrester under test. The power frequency AC and DC leakage currents flowing through the ZnO surge arresters with and without the injection of lightning impulse currents were measured. As a result, the leakage currents are increased and the asymmetry of the AC leakage current is pronounced as the number of injection of the impulse current increases. The ZnO grain of the surge arrester without the injection of lightning surges are uniform but the ZnO grain of the ZnO surge arrester with the injection of lightning impulse currents are deformed. Also, it was found that the decrease of the $Bi_2O_3$ due to the lightning impulse current leads to the lack of grain boundary layer and the current concentrated by the lack of grain boundary layer play an important role to degrade nonlinear property of ZnO surge arrester blocks.

• Journal of the Korean Society of Safety
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• v.33 no.3
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• pp.27-32
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• 2018

Nowadays, to prevent electrical accidents in Korea, inspectors directly performed checking general electrical facilities as a cycle from every one to three years. It is difficult to presuppose an omen because intact conditions of electrical equipments are not kept at the time of inspection. In this paper, in order to ensure effectiveness of an online basis electric inspection, we developed an electrical safety IoT system using LoRa communication technology to enable monitoring mainly electrical safety components such as overcurrent, overvoltage, resistive leakage current, and power. Then we proposed a method for verifying performances of the prosed electrical safety IoT system. Resistive leakage currents are calculated by using difference of phase between voltages and currents. We verified that average errors are 0.97%, which reference goal is ${\pm}5%$ for a device, through reliability test according to conditions. Results of this research can be used as basic study materials to develop technologies for measuring three phase leakage current and for implementing public electrical safety. platform.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.190-194
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• 2017

Present-day solar panels incorporate inverters as their core components. Switching devices driven by specialized power controllers are operated in a transformerless inverter topology. However, some challenges associated with this configuration include the absence of isolation, causing leakage currents to flow through various components toward ground. This inevitably causes power losses, often being also the primary reason for the power inverters' analog equipment failure. In this paper, various aspects of the leakage currents are studied using different circuit analysis methods. The primary objective is to convert the leakage current energy into a usable DC voltage source. The research is focused on harvesting the leakage currents for producing circa 1.1 V, derived from recently developed rectifier circuits, and driving a $200{\Omega}$ load with a power in the milliwatt range. Even though the output voltage level is low, the harvested power could be used for charging small batteries or capacitors, even driving light loads.