• Journal of the Korean Society for Nondestructive Testing
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• v.33 no.5
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• pp.465-471
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• 2013

A steam generator in nuclear power plant is a heatexchager which is used to convert water into steam from heat produced in a nuclear reactor core, and the steam produced in steam generator is delivered to the turbine to generate electricity. Because of damage to steam generator tubing may impair its ability to adequately perform required safety functions in terms of both structural integrity and leakage integrity, eddy current testing is periodically performed to evaluate the integrity of tubes in steam generator. This assessment is normally performed during a reactor refueling outage. Currently, the eddy current testing for steam generator of nuclear power plant in Korea is performed in accordance with KEPIC & ASME Code requirements, the eddy current testing system is consists of remote data acquisition unit and data analysis program to evaluate the acquired data. The KEPIC & ASME Code require that the electrical properties of remote data acquisition unit, such as total harmonic distortion, input & output impedance, amplifier linearity & stability, phase linearity, bandwidth & demodulation filter response, analog-to-digital conversion, and channel crosstalk shall be measured in accordance with the KEPIC & ASME Code requirements. In this paper, the measurement requirements of electrical properties for eddy current testing instrument described in KEPIC & ASME Code are presented, and the measurement results of newly developed eddy current testing instrument by KHNP(Korea Hydro & Nuclear Power Co., LTD) are presented.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.37-42
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• 2006

The preparation and processing of PVP-gate insulators on the device performance have been studied in the fabrication of organic thin film transistors (OTFTs). One of polyvinyl series, poly-4-vinyl phenol(PVP) was used as a solute and propyleneglycol monomethyl etheracetate(PGMEA) as a solvent in the formation of organic gate solutions. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compounds. From the measurements of electrical insulating characteristics of metal-insulator-metal (MIM) samples, PVP-based insulating layers showed lower leakage current according to the increase of concentration of PVP and poly (melamine-co-formaldehyde) to PGMEA in the formation of organic solutions. The PVP(20 wt%) copolymer with composition of 20 wt% PVP to PGMEA and cross-linked PVPs in which 5 wt% and 10 wt% poly (melamine-co-formaldehyde) hardeners had been additional]y mixed into PVP(20 wt%) copolymers were used as gate dielectrics in the fabrication of OTFTs, respectively. In our experiments, the maximum field effect mobility of $0.31cm^2/Vs$ could be obtained in the 5 wt% cross-linked PVP(20 wt%) device and the highest on/off current ratio of $1.92{\times}10^5$ in the 10 wt% cross-linked PVP(20 wt%) device.

• Journal of the Korea Society of Computer and Information
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• v.19 no.12
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• pp.143-152
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• 2014

This paper introduces Database security to prevent the rapidly increasing issue of private information leakage. The Database security examined in the paper separates into DB access control area and DB encryption area which further leads the paper to analyze the factors of the two areas and suggest necessary elements for creating stable Database security. In addition, the paper examines previous DB security programs by areas and analyzes pros and cons from the tested result. The experiment indicated that while DB access control presents less degradation and reduced the need to modify the existing DBMS since the access control operates at the end point of the network, DB encryption presented strength in protecting the data from unauthorized access. On the other hand, DB access control is less useful in preventing the attack in advance which leaves the log to enable tracking afterward while DB encryption can only be operated by limited types of Database and causes degradation due to system load and shows higher percentage of failure when creating the system. This paper examines characteristics of Database security areas in order to be used as a reference for institutions or companies seeking stable Database security.

• Proceedings of the KSR Conference
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• 2010.06a
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• pp.1982-1990
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• 2010

Excepting tunnel of dorimstream - ccachimountain station section, the subway line No.2th section was build using ASSM and NATM methods because of soil pressure and land condition. The way of dealing underground water was selected without sufficient preconsideration of geographical features, ground condition, influence of lowing underground water, and long-term cost of running maintenance so that the form of undrained tunnel was build having decreased construction characteristics and technically improper elements. The form of partial drainage is very difficult to manage structures of tunnel, because water leakage, water pressure causing cracks of lining concretes and scaling are constantly happened. so partial drainage suggest that setting reinforced Anchor Bolt to prevent buoyancy and should increase center drainage way up to height of railroad. Partial drainage suggest that holey pipe(${\phi}$350mm) manhole, drainage checking pipe manhole are should be regularly dredged, when changing roadbed(gravel${\rightarrow}$concrete) drainage checking pipe manhole should be build and setting a limitation of entering underground water's quantities. Beside drainage degree in changed section of structures causing instability of structures is continuous degree. so if efficient drainage way and the patterns of flaws, problems are considered in survey, it will be expected to have a advantage condition in maintenance part.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.1
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• pp.24-36
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• 2003

The digital mobile communication will be developed till getting multimedia service in anyone, any where, any time. Theses requiring items are going to be come true via IMT-2000 system. Transmitting signal bandwidth of IMT-2000 system is 3 times as large as IS-95 system. That is mean peak to average of signal is higher than IS-95A system. So we have to design it carefully not to effect in adjacent channel. HPA(High Power Amplifier) located in the end point of system is operated in 1-㏈ compression point(Pl㏈), then it generates 3rd and 5th inter modulation signals. Theses signals affect at adjacent channel and RF signal is distorted by compressed signal which is operated near by Pl㏈ point. Then the most important design factor is how we make HPA having high linearity. Feedback, Pre-distorter and Feed-forward methods are presented to solve theses problems. Feed-forward of these methods is having excellent improving capacity, but composed with complex structure. Generally, Linearity and Efficiency in power amplifier operate in the contrary, then it is difficult for us to find optimal operating point. In this paper we applied algorithm which searches optimal point of linear characteristics, which is key in Power Amplifier, using minimum current point of error amplifier in 1st loop. And we made 2nd loop compose with new structure. We confirmed fabricated LPA is operated by having high linearity and minimum current condition with ACPR of -26 ㏈m max. @ 30㎑ BW in 3.515㎒ and ACLR of 48 ㏈c max@${\pm}$㎒ from 1W to 40W.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.671-677
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• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.

• Journal of Korean Tunnelling and Underground Space Association
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• v.18 no.1
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• pp.109-117
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• 2016

This paper is focused on the determination of friction parameter which is a predominant factor in the design of inflatable structure system. This inflatable structure system is very valuably used to protect passively and rapidly the possibilities of tunnel damages by flooding threats and unusual leakage to be occurred during and after underground infrastructure construction. In particular, this system should be necessary in subsea tunnel. This study presents the experimental results obtained from the relative friction characteristics tests of the fabric materials that constitute the inflatable structure. In order to evaluate the relative friction behaviour of the inflatable structure system, friction tests and scaled model tunnel friction tests are carried out. The friction tests are carried out to determine the friction coefficient for different surface conditions between tunnel and inflatable structure. These friction coefficients are then evaluated and compared with the result obtained from the model tunnel friction tests. Interaction behaviours between tunnel and system are also reviewed and described in this study. The results clearly show that the friction coefficients derived from scaled model slippage tests are about 12% lower than values obtained from the friction tests. In addition, this study will be necessary to verify the real friction behaviour with prototype tests before applying in practice.

• Progress in Medical Physics
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• v.16 no.3
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• pp.111-115
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• 2005

We have designed the multi channel detector for the quality assurance of clinical photon beams. The detector was composed of solid phantom inserted by six plane-parallel ionization chambers at different depth. The chamber as a mini plane parallel chamber was made of carbon coated microfilms. In this study the electrical characteristics of the six chambers in the solid phantom were evaluated using 6 MV photon beam. The leakage currents were less than 0.5 pA, reproducibility was less than 0.5$\%$, linearity was less than 0.5$\%$, and dose rate effect was less than 0.7$\%$. In addition the effect of dose variation from other chambers was estimated to maximum 0.8$\%$ approximately. The developed detector can be used for quality determination in output dosimetry or measurement of percentage depth dose approximately for clinical photon beam.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.5
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• pp.1066-1072
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• 2005

The effects of La concentration in PLZT (z/30/70) thin film prepared by sol-gel method are investigated for the NVFRAM application. As the La concentration increases, the dielectric constants at 10 kHz increase from 450 to 600, while the loss tangent and the leakage current density at 100 kV/cm decrease from 0.075 to 0.025 and from $5.83{\times}10^{-7}\;to\;1.38{\times}10^{-7}\;A/cm^2,$ respectively. In the results of hysteresis loops measured at 175 kV/cm, the remanent polarization and the coercive field decrease from 20.8 to $10.5{\mu}C/cm^2$ and from 54.48 to 32.12 kV/cm, respectively, with the increase of La concentration from 0 to $10mol\%.$ After applying for $10^9$ cycles of square pulses with ${\pm}5V$ height, the remanent polarization of the PLZT (10/30/70) thin film decreases $40\%$ from the initial state, while that of the PLZT (10/30/70) thin film decreases $64\%.$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.176-176
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio (Ion/Ioff), leakage current, threshold voltage, and hysteresis under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stability of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers was investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic-layer-deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to 105 times with 5mm bending radius. In the most of the devices after 105 times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the Ion/Ioff and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.