• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.410-411
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• 2007

To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.360-363
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• 2003

In this paper, we investigated SiNx film as a buffer layer of TFT-FRAM. Buffer layers were prepared by two step process of a $N_2$ plasma treatment and subsequent $SiN_x$ deposition. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of current-voltage curve disappeared. After $N_2$ plasma treatment, a leakage current was decreased about 2 orders. From these results, it is possible to perform the plasma treating process to make a good quality buffer layer of MFIS-FET or capacitor as an application of non-volatile memory.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1559-1561
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• 1994

At present, the principle of puffer action in high current interruption is adopted in almost of the EHV(Extra High Voltage) and UHV(Ultra High Voltage) GCB(Gas Circuit Breakers). The thermal interruption capability of these GCBs critically depends on the pressure rise in the puffer cylinder at current zero. The pressure rise in the puffer cylinder depends on the puffer cylinder volume, flow passage and leakage area in the interrupter, stroke curve etc. Recently commercial CFD(Computational Fluid Dynamics ) packages have been widely adopted to calculate the pressure distribution in the interrupter. However, there are still several problems with it, e.g. very expensive price, moving boundary problem, computation time, difficulty in using the package etc. Thus, the calculation of the puffer cylinder pressure in simple and relatively correct method is essential in early stage of GCB design. In these paper, the model ing technique and computed results for EHV class GCB (HICO, 145kV 40kA and 362kV 40kA GCB) are presented and compared with available measured results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1283-1285
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• 1993

A new simulation method for a device including the Floated Field Plate(FFP) is proposed. The external resistance is connected with FFP in order to simulate FFP as a electrode. The numerical I-V characteristic obtained from MEDICI simulation shows fairly good results such as low leakage current and abrupt breakdown voltage curve. The convergence is improved conveniently compared with conventional method which utilize heavily-doped poly silicon as a electrode.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.6-10
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• 2000

Ferroelectric YMnO$_3$ thin films were deposited on $Y_2$O$_3$/si(100) substrates by metalorganic chemical vapor deposition. The YMnO$_3$ thin films annealed in vacuum ambient (100 mTorr) above 75$0^{\circ}C$ show hexagonal structured YMnO$_3$. However, the film annealed in oxygen ambient shows poor crystallinity, and the second phase as $Y_2$O$_3$ and orthorhombic-YMnO$_3$ were shown. The annealing ambient and pressure on the crystallinity of YMnO$_3$ thin films is very important. The C-V characteristics have a hysteresis curve with a clockwise rotation, which indicates ferroelectric polarization switching behavior. When the gate voltage sweeps from +5 to 5 V, the memory window of the Pt/YMnO$_3$/Y$_2$O$_3$/Si gate capacitor annealed at 85$0^{\circ}C$ is 1.8 V. The typical leakage current densities of the films annealed in oxygen and vacuum ambient are about 10$^{-3}$ and 10$^{-7}$ A/cm$^2$ at applied voltage of 5 V.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1367-1369
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• 1998

To achieve the ULSI goals of higher density, greater performance and operation speed have been scaled down. However, the reduction of channel length cause undesirable problems such as drop of punchthrough voltage, hot-carrier degradation and high leakage current, etc.. It is shown that the device characteristics depend on process parameters. In this Paper, we catched hold of trends of hot-carrier effects and punchthrough voltages due to variation of some process parameters such as LDD doses(P), spacer lengths, channel doses($BF_2$) and $V_T$ adjusting channel implantation energies using design trend curve (DTC). As the LDD and channel doses increased, hot-carrier phenomena became more severe, and punchthrough voltage was decreased. It were represented that punchthrough and hot carrier effects were critically depend on LDD and channel doses.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.743-746
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• 2000

Metal-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/$LiNbO_3$/Si structure were successfully fabricated. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 8.2. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$$1O^{-8}$A/$cm^2$ order at the electric field of 500kV/cm. The dielectric constant of $LiNbO_3$film on AIN/Si structure was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500kV/cm was about 5.6$\times$ $1O^{13}$ $\Omega$.cm.

• 한국진공학회지
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• 제5권1호
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• pp.62-66
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• 1996

$(Ba_{1-x}Sr_xTiO_3$ (BST) thin films have been grown on Pt-coated MgO by metal -organic chemical vapor deposition. X-ray diffraction results showed that BST films were grown on a Pt/MgO substrate with (100) preferred orientation perpendicular to the surface. The lineawr relationship of P-E curve obtained form hysteresis loop measurement indicated that the BST films had a Curie transitions below room temperature . Films deposited at $900^{\circ}C$ exhibited a smooth and dense microstructure, a dielectric constant of 202, and a dissipation facotr of 0.02 at 100kHz. The leakage current density of the BST films is about $2\times10^{-10} \;A/\textrm{cm}^2$$ at an applied electric field of 0.2 MV/cm. The electrical behavior on the current-voltage characteristics is well explained by the bulk-limited Pool-Frenkel emission.

• 마이크로전자및패키징학회지
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• 제9권1호
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• pp.49-52
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• 2002

본 연구를 통하여 저온 반도체 공정용 정전퍽(ESC)을 테이프캐스팅 공정에 의하여 스테인레스스틸에 소다붕규산염유리가 도포된 형태로 제작할 수 있음을 입증하였다. 스테인레스스틸 기판위의 유리 도포층은 125 $\mu\textrm{m}$의 두께로 제작되었다. 유리 도포층의 접합력은 매우 우수하여 $300^{\circ}C$이상의 온도변화에서도 균열이나 층간갈라짐 현상이 발생하지 않았다. 정전 고착압력은 전반적으로 이론적 관계인 전압의 제곱에 비례하는 경향을 보였으나, 고온과 고인가전압에서는 이 관계에서 벗어나는 것으로 나타났다. 이러한 이탈현상은 고온과 고인가전압에서 전기비저항의 감소에 따른 누설전류의 증가에 기인한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.80-80
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• 2009

Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.