• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.391-394
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• 2003

It is inevitable that reconsideration of the use of lead oxides in the electronics industry be undertaken as long as detrimental effects to the environment remain. To solve this problem, many recent studies on Pb-free compositions for PDP (plasma display panel) dielectric layers and also sealing glass compositions have been made. The present study was conducted to investigate whether the alternative systems for leadfree low firing glasses, detailed below, are available for use in PDP materials. The results suggest that low-melting phosphate glasses would be suitable as an alternative material for the Pb-based dielectric layer, sealants and barrier ribs in PDP.

• Macromolecular Research
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• v.14 no.1
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• pp.34-37
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• 2006

Attaching the organosilyl groups to macromolecular chains of 2-hydroxyethyl methacrylate (HEMA) should lead to important modifications of polymer properties. t-$BuMe_{2}Si$ and cubane-l, 4-dicarboxylic acid (CDA) were covalently linked with 2-hydroxyethyl methacrylate (HEMA). The silyl-linked HEMA is abbreviated as TSMA, while cubane-l ,4-dicarboxylic acid (CDA) linked to two HEMA groups is the cross-linking agent (CA). Free radical cross-linking copolymerization of TSMA and HEMA with various ratios of CA as the cross-linking agent was carried out at 60-70$^{circ}C$. The compositions of the cross-linked, three-dimensional polymers were determined by FTIR spectroscopy. The glass transition temperature ($T_{g}$) of the network polymers was determined calorimetrically. The $T_{g}$ of the network polymer increased with increasing cross-linking degree.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.1-23
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• 2019

Dielectric materials with inherently high power densities and fast discharge rates are particularly suitable for pulsed power capacitors. The ongoing multifaceted efforts on developing these capacitors are focused on improving their energy density and storage efficiency, as well as ensuring their reliable operation over long periods, including under harsh environments. This review article summarizes the studies that have been conducted to date on the development of high-performance dielectric ceramics for employment in pulsed power capacitors. The energy storage characteristics of various lead-based and lead-free ceramics belonging to linear and nonlinear dielectrics are discussed. Various strategies such as mechanical confinement, self-confinement, core-shell structuring, glass incorporation, chemical modifications, and special sintering routes have been adopted to tailor the electrical properties and energy storage performances of dielectric ceramics. In addition, this review article highlights the challenges and opportunities associated with the development of pulsed power capacitors.

• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.247-256
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• 2024

The glass series modified by tungsten oxide was created using the compounds (75-x) B₂O₃- 10SrCO₃- 8TeO₂- 7ZnO - xWO₃, where x = 0, 1, 5, 10, 22, 27, 34, and 40% mole percentage. A UV-visible spectrophotometer and thermogravimetric-differential thermal analysis (TG-DTA) methods were employed to characterize the specimen's optical and phase transition attributes, respectively. The mass-attenuation coefficient (AC) of all created glasses from BSTZW0 to BSTZ7 was estimated using Geant4 code from 0.05 to 3 MeV and compared to the XCOM software results, with a relative difference of less than 2% between the two results. The increase of WO₃ percentage lead to an increase in the Linear-AC at each studied energy, and this is mainly due to the fact that the higher the percentage of WO₃ in the glass increases its density which causes an increase in the Linear-AC, so an energy of 0.06 MeV, as an example, the values of the Linear-AC was 4.009, 4.509, 5.442, 6812, 8.564, 9.856, 10.999 and 11.628 cm^-1 form BSTZW0 too BSTZW7, respectively. The Half-VL (value layer), Mean-FP (free path), Tenth-VL, and Radiation attenuation performance (RAP) were also calculated for the current BSTZW-glass samples and revealed that BSTZW7 had the best gamma ray attenuation performance at all discussed energies when compared to other studied glass samples.

• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.30-34
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• 2002

In this Paper, Insulation of current lead in the conduction-cooled DC reactor for the 1.2kV class 3 high-Tc superconducting fault current limiter(SFCL) is studied. Thermal link which conducts heat energy but insulates electrical energy is selected as a insulating device for the current lead in the conduction-cooled Superconducting DC reactor. It consists of oxide free copper(OFC) sheets, Polyimide films, glass fiberglass reinforced Plastics (GFRP) plates and interfacing material such an indium or thermal compound. Through the test of dielectric strength in L$N_2$, polyimide film thickness of 125 ${\mu}{\textrm}{m}$ is selected as a insulating material. Electrical insulation and heat conduction are contrary to each other. Because of low heat conductivity of insulator and contact area between electrical insulator and heat conductor, thermal resistance of conduction-cooled system is increased. For the reducing of thermal resistance and the reliable contact between Polyimide and OFC, thermal compound or indium can be used As thermal compound layer is weak layer in electrical field, indium is finally selected for the reducing of thermal resistance. Thermal link is successfully passed the test. The testing voltage was AC 2.5kVrms and the testing time was 1 hour.

• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.117-121
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• 2010

$SnO_2-(1-x)P_2O_5-xB_2O_3$ glass system were prepared by melt-quenching technique in the compositional series containing 50, 55 and 60 mol% of $SnO_2$. Local structure of the glasses was investigated by Raman and FT-IR measurements. A large glass-forming region was found at the phosphate side of the ternary system with homogeneous glasses containing up to 5~25 mol% of $B_2O_3$. According as content of $B_2O_3$ increases, theraml expansion coefficient of glass decreased but transition temperature and softening temperature increased. Because these phenomenon changed local structure of glass. According as content of $B_2O_3$ increases, quantity of bridging oxygen increased. Also, according as content of $SnO_2$ increases, confirmed that quantity of non-bridging oxygen increases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1107-1113
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• 2004

Dry film method for large size of PDP(Plasma Display Panel) module has been actively investigated. This method for lead-free transparent dielectric formation depends on green sheet technology. By adjusting the composition of transparent dielectric powders and organics, uniformly dispersed slurry was fabricated, Viscosity of the slurry exhibited pseudoplastic behavior for tape casting, Cast green sheets were tested under tensile condition at room temperature. It was found that the increase in transparent dielectric powder and binder ratio leads to decrease in strain to failure of green sheets from 120 % to 34 % and from 255 % to 4 %, respectively. Tensile strength of green sheets decreased abruptly with increase of transparent dielectric powder ratio, with minimum at 0.13 MPa. On the other hand, tensile strength increased continuously from 0.1 MPa to 2.4 MPa with increase of binder ratio. The green sheets were attached on the glass substrate and heated by following firing schedule. As a result, the best result was obtained when fired at 580 $^{\circ}C$ for 15 min and had transmittance of 78 % in visible range 550 nm.

• Journal of the Korean Chemical Society
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• v.66 no.5
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• pp.341-348
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• 2022

In this work, radio frequency magnetron sputtering was used to deposit zinc selenide thin films on p-type silicon (100) wafers and glass substrates in a high vacuum chamber. Several surface characterization instruments were implemented to study the thin films. X-ray photoelectron spectroscopy results revealed that oxidized Zn bound to Se (Zn-Se) at 1022.7 ± 0.1 eV becomes the dominant oxidized species when Se concentration exceeds 70%. Scanning electron microscopy coupled with energy dispersive spectroscopy showed that incorporating Se in Zn thin films will lead to formation of ZnSe grains on the surface. Contact angle measurements indicated that ZnSe-60 exhibited the lowest total surface free energy value of 24.94 mN/m. Lastly, ultraviolet-visible spectrophotometry and ultraviolet photoelectron spectroscopy data evinced that the energy band gap gradually increases with increasing Se concentration with ZnSe-70 having the highest work function value of 4.91 eV.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.390-396
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• 2012

Ag pastes added to Bi-oxide frits have been applied to the electrode material of Si solar cells. It has been reported that frits induce contacts between the Ag electrodes and the Si wafer after firing. During firing, the control of interfaces among Ag, the glass layer, and Si is one of the key factors for improving cell performance. Specifically, the thermo-physical properties of frits considerably influence Ag-Si contact. Therefore, the thermal properties of frits should be carefully controlled to enhance the efficiency of cells. In this study, the interface structures among Ag electrodes, glass layers, and recrystallites on an $n^+$ emitter were carefully analyzed with the thermal properties of lead-free frits. First, a cross-section of the area between the Ag electrodes and the Si wafer was studied in order to understand the interface structures in light of the thermal properties of the frits. The depth and area of the pits formed in the Si wafer were quantitatively calculated with the thermal properties of frits. The area of the glass layers between the Ag electrodes and Si, and the distribution of recrystallites on the $n^+$ emitter, were measured from a macroscopic point of view with the characteristics of the frits. Our studies suggest that the thermophysical properties should be controlled for the optimal performance of Si solar cells; our studies also show why cell performance deteriorated due to the high viscosity of frits in Ag pastes.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.74-79
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• 2000

In an attempt to estimate the wetting properties of wettable metal layers by wetting balance method, an analysis of wetting curves of the coating layer was performed. Based on the analysis, wetting properties of UBM-coated Si-plate were estimated by the new wettability indices. The wetting curves of the one and both sides-coated UBM layers have the similar shape and show the similar tendency to the temperature. So the wetting property estimation of one side coating is possible with wetting balance method. For UBM of Si-chip, Cr/Cu/Au UBM is better than Ti/Ni/Au in the point of wetting time. At general reflow temperature, the wettability of high melting point solders(Sn-Sb, Sn-Ag) is better than that of few melting point ones(Sn-Bi, Sn-In).The contact angle of the one side coated plate to the solder can be calculated from the farce balance equation by measuring the static state force and the tilt angle.