• Title/Summary/Keyword: Layered Perovskite

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Preparation of $(Bi,La)Ti_{3}O_{12}$ Thin Films on $Al_{2}O_{3}/Si$ Substrates by the Sol-Gel Method

  • Chang, Ho Jung;Hwang, Sun Hwan;Chang, Ho Sung;Sawada, K.;Ishida, M.
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2002.11a
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    • pp.69-71
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    • 2002
  • $(Bi, La)Ti_{3}O_{12}(BLT)$ ferroelectric thin films were prepared on $Al_{2}O_{3}/Si$ substrates by the sol-gel method. The as-coated films were post-annealed at the temperature of $650^{\circ}C$ and $700^{\circ}C$ for 30 min. The crystallinty, surface morphologies and electrical properties were affected by the annealing temperatures. The BLT films annealed at above $650^{\circ}C$ exhibited typical bismuth layered perovskite structures with (00$\ell$) preferred orientation. The granular shaped grains with a size of approximately 90nm was formed in the film sample annealed at $700^{\circ}C$. The memory window volatge of the BLT film was 2.5V. The leakage current of BLT films annealed at $650^{\circ}C$ was about $1\times10^{-7}A/\textrm{cm}^2$ at 3V.

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Electrical Properties of SBT Capacitors with Top Electrodes (다양한 상부전극에 따른 SBT 커패시터의 전기적 특성)

  • 조춘남;오용철;김진사;정일형;신철기;최운식;김충혁;이준웅
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.12
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    • pp.553-558
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    • 2003
  • The A S $r_{0.7}$B $i_{2.6}$T $a_2$ $O_{9}$ (SBT)thin films are deposited on Pt-coated electrode(Pt/$TiO_2$/$SiO_2$/Si) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at 75$0^{\circ}C$ and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represent a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40C/$\textrm{cm}^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.8110$^{-10}$ A/$\textrm{cm}^2$, respectively.y.y.

Electrical Properties of SBT Capacitor with top electrodes (상부전극에 따른 SBT 커패시터의 전기적 특성)

  • Jo, Chun-Nam;O, Yong-Cheol;Kim, Jin-Sa;Sin, Cheol-Gi;Choe, Un-Sik;Kim, Chung-Hyeok;Park, Yong-Pil;Hong, Jin-Ung;Lee, Jun-Ung
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1499-1501
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    • 2003
  • The A $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT)thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at $750^{\circ}C$ and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represents a favorable properties in Pt electrode. The maxim urn remanent polarization and the coercive electric field with Pt electrode are $12.40C/cm^2$and 30kV/cm respectively. The dielectric constant and leakage current density with Pt electrode is 340 and $6.8110^{-10}A/cm^2$ respectively.

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Microstructure Characteristics and Electrical Properties of Sintered $(Bi,La)_4Ti_3O_{12}$ Ferroelectric Ceramics

  • Yoo, H.S.;Son, Y.H.;Hong, T.W.;Ur, S.C.;Ryu, S.L.;Kweon, S.Y.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.533-534
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    • 2006
  • 1mm-thick BLT ceramics were sintered in accordance with a bulk ceramic fabrication process. All XRD peaks detected in the sintered ceramics were indexed as the Bi-layered perovskite structure without secondary phases. Density was increased with increasing the sintering temperature up to $1050\;^{\circ}C$ and the maximum value was about 98% of the theoretical density. The remanent polarization (2Pr) value of BLT ceramic sintered at $1050\;^{\circ}C$ was approximately $6.5\;{\mu}C/cm^2$ at the applied voltage of 4.5kV. From these results, a BLT ceramic target for plused laser deposition (PLD) system was successfully fabricated.

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Microstructure Characteristics and Electrical Properties of Sintered $(Bi,La)_4Ti_3O_{12}$ Ferroelectric Ceramics (소결한 $(Bi,La)_4Ti_3O_{12}$ 강유전체 세라믹의 미세구조 및 전기적 특성)

  • Yoo, Hyo-Sun;Son, Yong-Ho;Ur, Soon-Chul;Ryu, Sung-Lim;Kweon, Soon-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.276-277
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    • 2006
  • 1mm-thick BLT ceramics were sintered in accordance with a bulk ceramic fabrication process. AII XRD peaks detected in the sintered ceramics were indexed as the Bi-layered perovskite structure without secondary phases. Density was increased with increasing the sintering temperature up to $1050^{\circ}C$ and the maximum value was about 98% of the theoretical density. The remanent polarization (2Pr) value of BLT ceramic sintered at $1050^{\circ}C$ was approximately $6.5\;{\mu}C/cm^2$ at the applied voltage of 4.5 kV. The calculated electromechanical coupling factor ($k_t$) of it was about 5% and the mechanical quality factor (Qm) was about 2200. From these results, a BLT ceramic target for pulsed laser deposition (PLD) system was successfully fabricated.

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Thickness effect on the ferroelectric properties of SBT thin films fabricated by LSMCD process (LSMCD공정으로 제조한 SBT 박막의 두께에 따른 강유전 특성)

  • 박주동;권용욱;연대중;오태성
    • Journal of the Korean Vacuum Society
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    • v.8 no.3A
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    • pp.231-237
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    • 1999
  • $SrBi_{22.4}Ta_2O_9$ (SBT) thin films of 70~150 nm thickness were prepared on platinized silicon substrates by Liquid Source Misted Chemical Deposition (LSMCD) process, and their microstructure, feroelectric and leakage current characteristics were investigated. By annealing at $800^{\circ}C$ for 1 hour in oxygen ambient, SBT films were fully crystallized to the Bi layered perovskite structure without preferred orientation. The grain size of the LSMCD- derived SBT films was about 100nm, and was not varied with the film thickness. $2P_r$ and $E_c$ of the SBT films increased with decreasing the film thickness, and the 70nm-thick SBT film exhibited $2P_r$ of 17.8 $\mu$C/$\textrm{cm}^2$ and $E_c$ of 74kV/cm at applied voltage of 5V. Within the film thickness range of 70~150nm, the relative dielectric permittivity of the LSMCD-derived SBT film decreased with decreasing the film thickness. Leakage current densities lower than $10^{-7}\textrm{A/cm}^2$ at 5V were observed in the SBT films thicker than 125nm.

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Characteristics of Oxygen Permeation on $YBaCo_2O_{5+{\delta}}$ Ceramic Membrane ($YBaCo_2O_{5+{\delta}}$ 세라믹 분리막의 산소투과 특성)

  • Pyo, Dae-Woong;Kim, Jong-Pyo;Park, Jung-Hoon
    • Membrane Journal
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    • v.22 no.2
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    • pp.113-119
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    • 2012
  • $YBaCo_2O_{5+{\delta}}$ oxide was synthesized by solid state reaction and a typical dense membrane has been prepared using as-prepared powder by unilateral pressing and sintering at $1,180^{\circ}C$. The $YBaCo_2O_{5+{\delta}}$ membraneswas analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). XRD analysis showed the double layered perovskite structure was observed over $1,150^{\circ}C$ without impurities. Oxygen permeation was measured in the temperature range from 750 to $950^{\circ}C$ according to oxygen partial pressure difference between feed and permeation side. The oxygen permeation flux increased with increasing temperature and oxygen partial pressure and the maximum oxygen flux of $YBaCo_2O_{5+{\delta}}$ membrane with 1.0 mm thickness was about 0.15 mL/$cm^2{\cdot}min$ at $950^{\circ}C$ and $PO_2$ = 0.42 atm. The activation energy for oxygen permeation decreased with decreasing oxygen partial pressure to be 76.0 kJ/mol at the condition of $PO_2$ = 0.21 atm.

Experimental Study on Millimeter Scale Two Phase Catalytic Reactor (밀리미터 스케일의 이상 분해 반응기에 대한 실험적 연구)

  • Cho, Chung-Hun;Lee, Dae-Hoon;Kwon, Se-JIn
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.28 no.3
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    • pp.265-270
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    • 2004
  • Experiment study on a down scaled two-phase catalytic reactor is presented. As a preliminary step for the development of catalytic reactor, nano-particulate catalyst was prepared. Perovskite La$\_$0.8/Sr$\_$0.2/CoO$_3$is chosen and synthesized as a catalyst considering superior catalytic performance in reduction and oxidation process where oxygen is involved among the reagent. Reactor that has a scale of 2${\times}$10${\times}$25mm was made by machining of A1 block as a layered structure considering further extension to micro-machining. Hydrogen peroxide of 70wt% was adopted as reactant and was provided to the reactor loaded with 1.5 g of catalyst. Reactant flow rate was varied by precision pump with a range of 0.15cc/min to 17.2cc/min. Temperature distribution within reactor was recorded by 3 thermocouples and total amount of liquid product was measured. Temperature distribution and factors that affect temperature were observed and relation between temperature distribution and production rate was also analyzed. Relative time scale plays a significant role in the performance of the reactor. To obtain steady state operation, appropriate ratio of flow rate, catalyst mass and reactor geometry is required and furthermore to get more efficient production rate temperature distribution should be evenly distributed. The database obtained by the experiment will be used as a design parameter for micro reactor.

Small Polaron Hopping Conduction of n=3 Ruddlesden-Popper Compound La2.1Sr1.9Mn3O10 System (n=3인 Ruddlesden-Popper형 La2.1Sr1.9Mn3O10의 Small polaron Hopping 전도)

  • Jung, Woo-Hwan
    • Journal of the Korean Ceramic Society
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    • v.39 no.3
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    • pp.294-298
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    • 2002
  • Polycrystalline $La_{2.1}Sr_{1.9}Mn_3O_{10}$ with layered perovskite structure have been successfully synthesized and investigated with respect to their thermoelectric, electric and magnetic properties. The large magnetoresistance (MR) effect with $-{\Delta}{\rho}/{\rho}_0$ of ∼120% at 0.85T was observed in a wide temperature range below a cusp temperature in resistivity of about 120K, which is well below the magnetic $T_C$. At high temperature, a singnificant difference between the activation energy deduced from the electrical resistivity and thermoelectric power, a characteristic of small polaron, is observed. All of the experimental data can be well explained on the basis of the small polaron model.

Microstructure and Electrical Properties of Vanadium-doped ${Bi_4}{Ti_3}{O_{12}}$ Thin Films Prepared by Sol-gel Method (졸-겔법으로 성장시킨 바나듐이 도핑된 ${Bi_4}{Ti_3}{O_{12}}$ 박막의 미세구조 및 전기적 특성)

  • Kim, Jong-Guk;Kim, Sang-Su;Choe, Eun-Gyeong;Kim, Jin-Heung;Song, Tae-Gwon;Kim, In-Seong
    • Korean Journal of Materials Research
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    • v.11 no.11
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    • pp.960-964
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    • 2001
  • $Bi_{3.99}Ti_{2.97}V_{0.03}O_{12}$ (BTV) thin films with 3 mol% vanadium doping were Prepared on $Pt/Ti/SiO_2/Si$ substrate by sol-gel method. X-ray diffraction analysis indicated that single-phase layered perovskite were obtained and preferred orientation was not observed. Under the annealing temperature at $600^{\circ}C$, the surface morphology of the BTV thin films had fine-rounded particles and then changed plate-like at $650^{\circ}C$ and $700^{\circ}C$. The remanent polarization $(2P_r)$ and coercive field $(2E_c)$ of $700^{\circ}C$ annealed BTV thin film were 25 $\mu$C/cm$^2$ and 116 kV/cm, respectively. In addition, BTV thin film showed little polarization fatigue during $10_9$ switching cycles. These improved ferroelectric properties were attributed to the increased rattling space and reduced oxygen vacancies by substitution $Ti^{4+}$ ion (68 pm) with smaller $V^{5+}$ ion (59 pm). The dielectric constant and loss were measured 130 and 0.03 at 10 kHz, respectively.

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