• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.215-220
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• 2007

Thin films of $SBT(SrBi_2Ta_2O_9)$ having $Pt/SBT/Seed/Pt/Ti/SiO_2/Si$ structure were fabricated using self-seed layer method by R.F. Magnetron sputter. Self-seed layers were deposited at room temperature and $600^{\circ}C$, which had 30 nm thickness. To investigate crystallization of self-seed layer we characterized by XRD after various heat treatment. And we characterized the crystallinity and electrical properties of SBT on self-seed layer after various heat treatment.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.5
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• pp.77-83
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• 2007

The study on damaged layer is necessary for machinability improvement in micro machining. The damaged layer in metal cutting is derived from plastic deformation and transformation of metal structure. The damaged layer affects micro mold life and micro machine parts. In this study, the damaged layer of micro machined surface of copper is evaluated according to various machining condition. The damaged layer structure and metallurgical characteristics are measured by optical microscope, and evaluated by cutting forces and surface roughness. The scale of this damaged layer depends on cutting process parameters and machining environments. By experimental results, depth of damaged layer was increased with increasing of cutting depth, also the damaged layer is less occurred in down-milling compared to up-milling during micro endmilling operation.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.6
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• pp.309-313
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• 2002

In this paper, we have studied minimization of the kerf-width and surface burning, which occurred after the conventional singulation process of the multi-layer BGA board with copper, polyethylene and epoxy glass fiber. The high thermal energy of a pulsed Nd:YAG laser is used to cut the multi-layer board. The most considerable matter in the laser cutting of the multi-layer BGA boards is their different absorption coefficient to the laser beam and their different heat conductivity. The cut mechanism of a multi-layer BGA board using a 2$^{nd}$ harmonic Nd:YAG laser is the thermal vaporization by high temperature rise based on the Gaussian profile and copper melting point. In this experiment, we found that the sacrifice layer and Na blowing are effective in minimizing the surface burning by the reaction between oxygen in the air and the laser beam. In addition, N2 blowing reduces laser energy loss by debris and suppresses surface oxidation. Also, the beam incidence on the epoxy layer compared to polyimide was much more suitable to reduce damage to polyimide with copper wire for the multi layer BGA singulation. When the polyester double-sided tape is used as a sacrifice layer, surface carbonization becomes less. The SEM, non-contact 3D inspector and high-resolution microscope are used to measure cut line-width and surface morphology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.850-853
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• 2009

We have optimized the device structure by using the dielectric layer such as anti-reflection thin film to improve the emitting efficiency of white organic light emitting device (WOLED). Basically, dielectric layer with anti-reflection characteristics can enhance the emitting efficiency of WOLED by compensating the refractive index of organic layer, ITO, and Glass. Here, WOLED was designed and optimized by Macleod simulator. The refractive index of 1.74 was calculated for Dielectric layer and was selected as $TiO_2$. The optimal thicknesses of $TiO_2$ and ITO were 119.3 and 166.6 nm, respectively, at the wavelength of 600 nm. The transmittance of ITO was measured with the thickness variation of dielectric layer and ITO in Organic layer/ITO/Dielectric layer structure. The transmittance of ITO was 95.17% and thicknesses of $TiO_2$ and ITO were 119.3 and 166.6 nm, respectively. This result, calculated and measured values were coincided.

• Geomechanics and Engineering
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• v.18 no.4
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• pp.363-371
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• 2019

In this study, the load carrying behavior of piled rafts installed in inclined bearing rock layer was investigated for rock-mounted and -socketed conditions. It was found that settlements induced for an inclined bearing rock layer are larger than for a horizontal layer condition. The load capacity of piled rafts for the rock-mounted condition decreased as rock-layer inclination angle (${\theta}$) increased, while vice versa for the rock-socketed condition. The load capacities of raft and piles both decreased with increasing ${\theta}$ for the rock-mounted condition. When bearing rock layer was inclined, loads carried by uphill-side piles were greater than those by downhill-side piles. The values of differential settlements of rock-mounted and -socketed conditions were not significantly different whereas slightly higher for the rock-socketed condition. The values of load sharing ratio (${\alpha}_p$) and its variation with settlement were not markedly changed by the inclination of bedrock. It was shown that ${\alpha}_p$ for piled rafts installed in rock layer was not affected by ${\theta}$ whereas actual loads carried by raft and piles may vary depending on the pile installation and rock-layer inclination conditions.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1702-1705
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• 2016

We propose a novel hydrogen-reduced p-type amorphous silicon oxide buffer layer between $TiO_2$ antireflection layer and p-type silicon window layer of silicon thin film solar cells. This new buffer layer can protect underlying the $TiO_2$ by suppressing hydrogen plasma, which could be made by excluding $H_2$ gas introduction during plasma deposition. Amorphous silicon oxide thin film solar cells with employing the new buffer layer exhibited better conversion efficiency (8.10 %) compared with the standard cell (7.88 %) without the buffer layer. This new buffer layer can be processed in the same p-chamber with in-situ mode before depositing main p-type amorphous silicon oxide window layer. Comparing with state-of-the-art buffer layer of AZO/p-nc-SiOx:H, our new buffer layer can be processed with cost-effective, much simple process based on similar device performances.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.4
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• pp.97-103
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• 2012

This study investigates thermal insulation properties of multi layer materials depending on thickness of air layers. Numerical analysis on the heat flow of different insulating materials was conducted to identify whether their temperature distributions demonstrate the reduced rate of heat transfer conclusively or not. Analytical model is divided into two categories. One is to distinguish temperature distribution of the air-layer materials from the non-air layer ones. The other is to compare the efficacy between eight-layered insulating materials with no air-layer contained and three-layered insulating materials which include an air-layer definitely. In the latter case, the identical thickness is assigned to each material. The effect of thermal insulation by including an air-layer is verified in the first analytical model. The result of the second model shows that the insulation of the eight-layered materials is coterminous at the three-layered ones with an air-layer and the thermal insulation of the two materials is imperceptible. The benefits of cost and energy saving are anticipated if air-layers are efficiently incorporated in multi layer insulating materials in a greenhouse.