• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.60-63
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• 2012

Enhancement of efficiency and luminance of organic light-emitting diodes was investigated by the introduction of a lithium carbonate ($Li_2CO_3$) electron-injection layer. Electron-injection layer is used in organic light-emitting diodes to inject electrons efficiently between a cathode and an organic layer. A device structure of ITO/TPD (40 nm)/$Alq_3$ (60 nm)/$Li_2CO_3$ (x nm)/Al (100 nm) was manufactured by thermal evaporation, where the thickness of $Li_2CO_3$ layer was varied from 0 to 3.3 nm. Current density-luminance-voltage characteristics of the device were measured and analyzed. When the thickness of $Li_2CO_3$ layer is 0.7 nm, the current efficiency and luminance of the device at 8.0 V are improved by a factor of about 18 and 3,000 compared to the ones without the $Li_2CO_3$ layer, respectively. The enhancement of efficiency and luminance of the device with an insertion of $Li_2CO_3$ electron-injection layer is thought to be due to the lowering of an electron barrier height at the interface region between the cathode and the emissive layer. This is judged from an analysis of current density-voltage characteristics with a Fowler-Nordheim tunneling conduction mechanism model. In a study of lifetime of the device that depends on the thickness of $Li_2CO_3$ layer, the optimum thickness of $Li_2CO_3$ layer was obtained to be 1.1 nm. It is thought that an improvement in the lifetime is due to the prevention of moisture and oxygen by $Li_2CO_3$ layer. Thus, from the efficiency and lifetime of the device, we have obtained the optimum thickness of $Li_2CO_3$ layer to be about 1.0 nm.

• Journal of Welding and Joining
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• v.15 no.5
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• pp.134-143
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• 1997

The formation of thick alloyed layer with high Si content have been investigated on the surface of Al alloy (A5083) plate by PTA process with Si powder. Hardening characteristics and wear resistance of alloyed layer was examined in relation to the microstructure of alloyed layer. Thick hardened layer in mm-order thickness on the surface of A5083 plate can be formed by PTA process with wide range of process condition by using Si powder as alloying element because of eutectic reaction of Al-Si binary alloy. High temperature and rapid solidification rate of molten pool, which are features of PTA process, enable the formation of high Si content alloyed layer with uniform distribution of fine primary Si paticle. High plasma arc current was beneficial to make the alloyed layer with smooth surface appearance in wide range of powder feeding rate, because enough volume of molten pool was necessary make alloyed layer. Uniform dispersion of fine primary Si particle with about 30${\mu}{\textrm}{m}$ in particle size can be obtained in layer with Si content ranging from 30 to 50 mass %. Hardness of alloyed layer increased with increasing Si content, but increasing rate of hardness differed with macrostructure of alloyed layer. Wear resistance of alloyed layer depended on $V_{si}$(volume fraction of primary Si) and was remarkably improved to two times of base metal at 20-30% $V_{si}$ without cracking, but no more improvement was obtained at larger $V_{si}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.897-902
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• 1998

We prepared Organic LED with a two layer structure by vacuum evaporation. The diode consisted of hole transfer layer (thickness of 30, 50, 70 nm) and electron transfer layer (thickness of 70, 50, 30 nm) material, which was N, N'-diphenyl- N, N'-bis-(3-methyl phenyl)-1,1'-diphenyl-4,4'-diamine)(TPD) and tris(8-hydroxy quinoline) aluminum(Alq3), respectively. We investigated EL properties of the LED with various thickness and cathode electrode. The best results were obtained when thickness of the electron layer is equal to that of emission layer and when AlLi alloy was used as a cathode. The EL intensity, luminance and efficiency of organic LED with equal of layer thick were improved seven, three and two times, respectively. Alq3 was ionized by carrier injection from cathode and could produce exitons. After electron-hole pairs were formed by combination of the electrons and holes at the emission layer, Alq3 layer emitted light.

• Journal of Environmental Science International
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• v.11 no.3
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• pp.155-160
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• 2002

Using measured data at Daegu by tethersonde for the period of 1984∼1987, we have investigated the lower atmospheric boundary layer structure including relationships between inversion layer and meteorological factors(wind and temperature), and the inversion strength and inversion height. The inversion layer was defined from the vertical temperature profile and its strength was analyzed with the wind shear as well as the vertical temperature gradient. From October to January, measured inversion layer isn't destroyed, however, in June, after sun rise, it is destroyed by surface heating and mixed layer is developed from surface. According to Pasquill stability classes, the moderately stable cases dominated. It's the larger vertical temperature gradient the lower SBL height. We have introduced B(bulk turbulence scale) which indicated SBL height. It's larger B, the higher SBL height and vice versa. It was noted that the bulk turbulence scale (B) is appropriate to determine the stable boundary layer height.

• Membrane Journal
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• v.25 no.6
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• pp.538-546
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• 2015

In this study, composite membrane is prepared by Layer-by-Layer method using hydrophobic polymer as a coating material on the polysulfone support. The existence of coating layer on the surface and cross section was confirmed by the scanning electronic microscopy. The flux and rejection of the resulting membranes were characterized using 100 ppm NaCl feed solution. PVSA, PEI, PAA, PSSA, PSSA_MA were used as a coating polymer in this study. The composite membrane prepared by using 8,000 ppm PAA solution (Ion strength = 0.35, Coating time = 3 min) and 10,000 ppm PEI solution (Coating time = 4 min). As a result, PAA-PEI composite membrane showed flux of 101 LMH and salt rejection of 66.7%. The composite membrane showed the comparable performance as good as NE 4040-70 (Flux = 30 LMH, Rejection = 40~70%) model produced by Toray Chemical co.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.441-444
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• 2000

This paper covers the performance testing for layer 3 Ethernet switch based on various methodologies by which we can measure essential metrics such as throughput, latency, frame loss rate, and back to back frames. In the first place, layer 2 and layer 3 switch evolution is introduced followed by description of IP packet switching in layer 3 switch. And then, the above test metrics and test methodologies are illustrated as well. At last, we conduct the performance testing for layer 3 switch in case of transmitting packets of 64, 128, 256, 512, 1024, 1280, and 1518 byte size and analyze then results.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.283-284
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• 2008

A cross-layer optimization is becoming a popular design methodology for the IP based next generation wireless network. We begin by investigating a cross-layer optimization scheme to enhance the system performance in wireless networks. By applying cross-layer optimization methodology to WiBro distributed network, the WiBro systems are expected to gain significant performance improvement and resource utilization enhanced. For further study we highlight some open challenges and new opportunities for cross-layer design.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.421-422
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• 2008

The electrical properties of OLEDs was investigated by the various cathode layer. It was measured by IVL for electrical properties and optical properties by EL spectrum. The structure of OLEDs was ITO/TPD(400$\AA$)/$Alq_3$(600$\AA$)/LiF(5$\AA$)/various cathode layer. The threshold voltage was increased by the deposited Au layer. The luminance was decreased by deposited Au layer.

• Journal of the Optical Society of Korea
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• v.1 no.2
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• pp.116-119
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• 1997

Highly quantum efficient and multi-color emissible polymer light emitting devices have been realized utilizing poly (1-dodecyloxy-4-methyl-1, 3-phenylene)(2, 5"-terthienylene)(hereafter, mPTTh polymer) as an emitting layer and tris(8-hydroxyquinoline) aluminum (Alq3) as an electron transport layer. A single layer EL device of mPTTh polymer emits orange-colored light. EL efficiency increases as the thickness of Alq3 layer increases, but the emission color becomes visually broad when the Alq3 layer thickness is greater than 30nm since the relative peak intensity of green EL from Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer increases. EL efficiency of the double layer device was greatly enhanced by 3000 times compared with that of a single layer device. Alq3 layer in device acts as a hole blocking electron transporting layer and an emitting layer as a function of the thickness of Alq3 layer.ayer.