• Title/Summary/Keyword: Layer-by-Layer film

Search Result 3,472, Processing Time 0.035 seconds

Acoustic Emission Monitoring of Incipient Failure in Journal Bearing Part II : Intervention of Foreign Particles in Lubrication (음향방출을 이용한 저어널 베어링의 조기파손감지(II) - 윤활유 이물질 혼입의 영향 및 감시 -)

  • Yoon, Dong-Jin;Kwon, Oh-Yang;Jung, Min-Hwa;Kim, Kyung-Woong
    • Journal of the Korean Society for Nondestructive Testing
    • /
    • v.14 no.2
    • /
    • pp.122-131
    • /
    • 1994
  • Journal bearings in the rotating machineries are vulnerable to the contamination or the insufficient supply of lubricating oil, which is likely to be the cause of unexpected shutdown or malfunction of these systems. Various destructive and nondestructive testing methods had been used for the reduction of maintenance cost and the operational safety problems due to the accidents related to bearing damages. In this experimental approach, acoustic emission monitoring is employed to the detection of incipient failure caused by intervention of foreign particles most probable in the journal bearing systems. Experimental schedules for the intervention of foreign particles was composed to be more quantitative and systematic than last study in consideration of minimum oil film thickness and particle size. The experiment was conducted under such designed conditions as inserting alumina particles to the lubrication layer in the simulated journal bearing system. Several parameters such as AE rms level, waveform, AE energy distribution and other AE event parameters are used for analysis and characterization of damage source. The results showed that the history of damage was well correlated with the changes of AE rms level and the type of damage source signal can be verified using other informations such as waveform, distributions of AE parameters etc.

  • PDF

Effect of Stuffing of TiN on the Diffusion Barrier Property (II) : Cu/TiN/Si Structure (TiN의 충진처리가 확산방지막 특성에 미치는 영향(II) : Cu/TiN/Si 구조)

  • Park, Gi-Cheol;Kim, Gi-Beom
    • Korean Journal of Materials Research
    • /
    • v.5 no.2
    • /
    • pp.169-177
    • /
    • 1995
  • The diffusion barrier property of 100-nm-thick titanium nitride (TiN) film between Cu and Si was investigated using sheet resistance measurements, etch-pit observation, x-ray diffractometry, Auger electron spectroscopy, and transmission electron microscopy. The TiN barrier fails due to the formation of crystalline defects (dislocations) and precipitates (presumably Cu-silicides) in the Si substrate which result from the predominant in-diffusion of Cu through the TiN layer. In contrast with the case of Al, it is identified that the TiN barrier fails only the in-diffusion of Cu because there is no indication of Si pits in the Si substrate. In addition, it appears that the stuffing of TiN does not improve the diffusion barrier property in the Cu/TiN/Si structure. This indicates that in the case of Al, the chemical effect that impedes the diffusion of Al by the reaction of Al with $TiO_{2}$ which is present in the grain boundaries of TIN is very improtant. On the while, in the case of Cu, there is no chemical effect because Cu oxides, such as $Cu_{2}O$ or CuO, is thermodynamically unstable in comparison with $TiO_{2}$. For this reason, it is considered that the effect of stuffing of TiN on the diffusion barrier property is not significant in the Cu/ TiN/Si structure.

  • PDF

A Study on Electro-optical Characteristics of the UV Aligned FFS Cell on the Organic Layer

  • Han, Jeong-Min;Ok, Chul-Ho;Hwang, Jeoung-Yeon;Kim, Byoung-Yong;Kang, Dong-Hun;Kim, Jong-Hwan;Kim, Young-Hwan;Han, Jin-Woo;Lee, Sang-Keuk;Seo, Dae-Shik
    • Transactions on Electrical and Electronic Materials
    • /
    • v.8 no.3
    • /
    • pp.135-138
    • /
    • 2007
  • In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the two kinds of ultraviolet (UV) alignment method on the organic thin film (polyimide: PI). The suitable organic layers for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the in-situ photoalignment method were studied; Disclination is observed after conventional photoalignment method for 1h, and in-situ photoalignment method for 1h. Monodomain alignment of the NLC can be observed via insitu photo alignment method for 2 h and 3 h. It is considered that NLC alignment is due to photo-depolymerization of the polymer with oblique non-polarized UV irradiation on PI surface. An unstable V-T curve of UV-aligned FFS-LCD with conventional photoalignment method can be achieved. However, a stable V-T curve of UV-aligned FFS-LCD with in-situ photoalignment method (1 h), and V-T curve of UV-aligned FFS-LCD with in-situ photo alignment method was much stable comparing with that of other UV-aligned FFSLCD's. As a result, more stable EO performance of UV-aligned FFS-LCD with in-situ photoalignment method for 3h is obtained than that of the other UV-aligned FFS-LCD's.

Characteristics of MHEMT Devices Having T-Shaped Gate Structure for W-Band MMIC (W-Band MMIC를 위한 T-형태 게이트 구조를 갖는 MHMET 소자 특성)

  • Lee, Jong-Min;Min, Byoung-Gue;Chang, Sung-Jae;Chang, Woo-Jin;Yoon, Hyung Sup;Jung, Hyun-Wook;Kim, Seong-Il;Kang, Dong Min;Kim, Wansik;Jung, Jooyong;Kim, Jongpil;Seo, Mihui;Kim, Sosu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.33 no.2
    • /
    • pp.99-104
    • /
    • 2020
  • In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

The study on corrosion of the inner area of closed box-girder for unpainted weathering steel bridges (무도장 내후성 강 교량의 밀폐형 박스거더 내부의 부식에 대한 고찰)

  • Ma, Seung-Hwan;Noh, Young-Tai;Jang, Gun-Ik
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.16 no.4
    • /
    • pp.2391-2400
    • /
    • 2015
  • Weather proof steels are used for steel bridges due to its high corrosion resistance under atmospheric conditions. However, instead of forming stabilized rust layers, general rust occurs on weather proof steels under high humidity condition close to seawater or shady places. In Japan, therefore, they perform rust stabilization treatment instead of unpainted treatment due to severe atmospheric conditions. However, most of domestic weather proof steels were constructed unpainted in the form of closed box-girder, which makes the periodical repetition of dry and wet hard to occur. For the steel bridges constructed on the Han river, the evaporation of water, dew condensation due to temperature change, and stagnant water due to rain affect harmfully on the formation of passive film on weather proof steels. Thus, in this research, in order to analyze corrosion properties inside the closed box-girder for the unpainted weather proof steel bridge in the waterworks safety zone, multiple ways of analysis such as observation with eyes, cellophane-tape test, steel thickness measurement, surface corrosion potential measurement, electron microscope analysis, and X-ray diffraction analysis of the rust were performed. As a result, unstable rust layer was observed inside the closed box-girder, and severe corrosion was observed on the top and bottom of the flanges due to the effects of stagnant water caused by rain, dew condensation, and de-icing materials.

Removal/Recovery of VOCs Using a Rubbery Polymeric Membrane (Rubbery 고분가 막을 이용한 휘발성 유기화학물의 제거 및 회수)

  • Cha, Jun-Seok
    • Membrane Journal
    • /
    • v.6 no.3
    • /
    • pp.173-181
    • /
    • 1996
  • Common volatile organic compounds(VOCs) such as toluene and methanol were removed successfully from N$_{2}$ using a novel silicone-coated hollow fiber membrane module. This novel membrane is a thin film composite(TFC) and was highly efficient in removing VOCs selectively from a N$_{2}$ stream. This membrane had some innate advantages over other silicone-based membrane in that the selective barrier was ultrathin(~1 $\mu$m) and the porosity of the polypropylene substrate was high which leads to a low permeation resistance. The substram was very strongly bonded to the coating layer by plasma polymerization and can withstand a very high pressure. A small hollow fiber module having a length of 25cm and 50 fibers could remove 96~99% of toluene as well as methanol vapors when the feed flow rate was up to 60cc/min. The percent removal of VOCs were even higher when the feed inlet concentration was higher. This process is especially suitable for treating streams having a low flow rate and high VOCs concentration. The permeances of VOCs through this membrane was in the range of $4~30 \times 10^{-9}gmol/sec \cdot cm^{2}\cdot cmHg$ for both toluene and methanol, and nitrogen permeance was between $3~9 \times 10^{-10}gmol/sec \cdot cm^{2} \cdot cmHg$. High separation factor between 10~55 for toluene/N$_{2}$ and 15~125 for methanol/N$_{2}$ were obtained depending on the feed flow rate ranges and feed VOCs concentration levels.

  • PDF

Preparation of CeO$_2$ Thin Films as an Insulation Layer and Electrical Properties of Pt/$SrBi_2$$Ta_2$$O_9$/$CeO_24/Si MFISFET (절연층인 CeO$_2$박막의 제조 및 Pt/$SrBi_2$$Ta_2$$O_9$/$CeO_24/Si MFISFET 구조의 전기적 특성)

  • Park, Sang-Sik
    • Korean Journal of Materials Research
    • /
    • v.10 no.12
    • /
    • pp.807-811
    • /
    • 2000
  • CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

  • PDF

The Fabrication of Poly-Si Solar Cells for Low Cost Power Utillity (저가 지상전력을 위한 다결정 실리콘 태양전지 제작)

  • Kim, S.S.;Lim, D.G.;Shim, K.S.;Lee, J.H.;Kim, H.W.;Yi, J.
    • Solar Energy
    • /
    • v.17 no.4
    • /
    • pp.3-11
    • /
    • 1997
  • Because grain boundaries in polycrystalline silicon act as potential barriers and recombination centers for the photo-generated charge carriers, these defects degrade conversion effiency of solar cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatment, various grid pattern, selective wet etching for grain boundaries, buried contact metallization along grain boundaries, grid on metallic thin film. Pretreatment above $900^{\circ}C$ in $N_2$ atmosphere, gettering by $POCl_3$ and Al treatment for back surface field contributed to obtain a high quality poly-Si. To prevent carrier losses at the grain boundaries, we carried out surface treatment using Schimmel etchant. This etchant delineated grain boundaries of $10{\mu}m$ depth as well as surface texturing effect. A metal AI diffusion into grain boundaries on rear side reduced back surface recombination effects at grain boundaries. A combination of fine grid with finger spacing of 0.4mm and buried electrode along grain boundaries improved short circuit current density of solar cell. A ultra-thin Chromium layer of 20nm with transmittance of 80% reduced series resistance. This paper focused on the grain boundary effect for terrestrial applications of solar cells with low cost, large area, and high efficiency.

  • PDF

Exchange coupling of Co/NiMn bilayer (Co/NiMn의 교환 자기결합에 관한 연구)

  • 안동환;조권구;주승기
    • Journal of the Korean Magnetics Society
    • /
    • v.10 no.4
    • /
    • pp.171-177
    • /
    • 2000
  • Exchange coupling of Co/NiMn bilayers fabricated by RF magnetron sputtering method was studied. We investigated the variation of exchange coupling field (H$\sub$ex/) for different annealing temperature and time. The maximum exchange coupling field was obtained after 13hr annealing at 300 $^{\circ}C$. With respect to deposition sequence, it was demonstrated that NiMn-top bilayers had higher exchange coupling field than NiMn-bottom bilayers. Ta capping layer was shown to be essential in achieving exchange coupling and Auger Electron Spectroscopy (AES) proved that uncapped NiMn/Co bilayers did not have exchange coupling because of oxygen incorporation into film. We also observed the effect of Ta underlayer on exchange coupling. It was found that Ta underlayer had better not be used for attaining higher exchange coupling. XRD analysis showed that Ta underlayer helped bilayers develop texture, but it was not essential to exchange coupling of Co/NiMn bilayers, which is in contrast to NiFe/NiMn system. Furthermore, the NiMn and Co thickness dependence of exchange coupling has been investigated. The exchange coupling strength reached the maximum above 200 ${\AA}$ NiMn thickness and had inversely proportional relation with Co thickness.

  • PDF

Energy Harvesting Characteristics of Interdigitated (IDT) Electrode Pattern Embedded Piezoelectric Energy Harvester (IDT 전극 패턴 임베디드 압전 에너지 하베스터의 특성)

  • Lee, Min-seon;Kim, Chang-Il;Yun, Ji-sun;Park, Woon Ik;Hong, Youn-Woo;Paik, Jong Hoo;Cho, Jeong Ho;Park, Yong-Ho;Jang, Yong-Ho;Choi, Beom-Jin;Jeong, Young-Hun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.29 no.9
    • /
    • pp.581-588
    • /
    • 2016
  • Piezoelectric thick films of a soft $Pb(Zr,Ti)O_3$ (PZT) based commercial material were produced by a conventional tape casting method. Thereafter, the interdigitated (IDT) Ag-Pd electrode pattern was printed on the $25{\mu}m$ thick piezoelectric film at room temperature. Co-firing of the 10-layer laminated piezoelectric thick films was conducted at $1,100^{\circ}C$ and $1,150^{\circ}C$ for 1 h, respectively. Piezoelectric cantilever energy harvesters were successfully fabricated using the IDT electrode pattern embedded piezoelectric laminates for 3-3 operation mode. Their energy harvesting characteristics were investigated with an excitation of 120 Hz and 1 g under various resistive loads (ranging from $10k{\Omega}$ to $200k{\Omega}$). A parabolic increase of voltage and a linear decrease of current were shown with an increase of resistive load for all the energy harvesters. In particular, a high output power of 3.64 mW at $100k{\Omega}$ was obtained from the energy harvester (sintered at $1,150^{\circ}C$).