• 대한전자공학회논문지TE
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• 제37권5호
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• pp.1-6
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• 2000

고순도 적색 발광을 얻기 위하여 진공증착법으로 스쿠아릴늄 색소(Sq)를 첨부한 알루미늄퀴롤린착체 (Alq3)를 발광층으로 사용하는 유기발광소자를 제작하였으며, 소자의 발광특성 및 전기적 특성을 조사하였다. 스쿠아릴늄의 발광 피이크 파장은 670㎚이고 발광강도가 절반이 되는 파장 폭은 30㎚이었다. 스쿠아릴늄의 적색발광은 도핑 농도가 15㏖% 이상에서 고순도 적색 발광특성이 관측되었지만, EL효율은 10/sup -2/W 이하이고 휘도는 0.21cd/㎡, 0.1cd/㎡ 정도로 매우 낮았다. 스쿠아릴늄 분자가 Alq3 분자 내에 트랩 된다고 하더라도 도핑농도가 5㏖% 이상인 경우에 캐리어 드래프트로 작용한다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.701-705
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• 2002

In order to realize full color display, two approaches were used. The first method is the patterning of red, green, and blue emitters using a selective deposition. Another approach is based on a white-emitting diode, from which the three primary colors could be obtained by micro-patterned color filters. White-light-emitting organic light emitting devices (OLEDs) are attracting much attention recently due to potential applications such as backlights in liquid crystal displays (LCDs) or other illumination purposes. In order for the white OLEDs to be used as backlights in LCDs, the light emission should be bright and have Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.33, 0.33). For obtaining white emission from OLEDs, different colors should be mixed with proper balances even though there are a few different methods for mixing colors. In this study, we will report a white organic electroluminescent device based on an incomplete energy transfer. In which the blue and green emission come from the same layer via incomplete energy transfer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.309-312
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• 2002

Triode field emitters with planar-carbon-nanopaticle (CNP) cathodes were successfully fabricated using the conventional photolithography and the hotfilament chemical vapor deposition. Electron emission from a CNP triode emitter with a 12-${\mu}m$-diameter gate hole started at the gate voltage of 45 V, and the anode current reached the level of ${\sim}120$ nA at the gate voltage of 60 V, respectively. For the quantitative analysis of the Fowler-Nordheim (F-N) type emission from a CNP triode emitter, we carried out 2dimensional numerical calculation of electrostatic potential using the finite element method. As it turned out, a radial variation of electric field was very important to account for the emission from a planar emitting layer. By assuming the graphitic work function of 5 eV for CNPs, we were able to extract a consistent set of F-N parameters, together with the radial position of emitting sites.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.558-561
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• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.38-39
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• 2006

We present experimental results that regard the effects of catalyst preparation on the structural and field-emissive properties of CNTs. The CNTs used in this research have been synthesized using the inductively coupled plasma-chemical vapor deposition (ICP-CVD) method. Catalyst materials (such as Ni, Co, and Invar 426) are varied and deposited on buffer films by RF magnetron sputtering. Prior to growth of CNTs, $NH_3$ plasma etching has also been performed with varying plasma etching time and power. For all the CNTs grown, nanostructures and morphologies are analyzed using Raman spectroscopy and FESEM, in terms of buffer films, catalyst materials, and pre-treatment conditions. Furthermore, the field electron-emission of CNTs are measured and characterized in terms of the catalyst preparation environments. The CNTs grown on Nicatalyst layer would be more effectual for enhancing the growth rate and achieving the vertical-alignment of CNTs rather than other buffer materials from results of SEM study. The crystalline graphitic structure of CNTs is improved as the catalyst dot reaches a critical size. Also, the field-emission result shows that the CNTs using Ni catalyst would be more favorable for improving electron-emission capabilities of CNTs compared with other samples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.558-561
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• 2001

Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• 한국표면공학회지
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• 제36권1호
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• pp.9-13
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• 2003

Plasma polymerized organic thin films were deposited on Si(100), glass and metal substrates at $25∼100 ^{\circ}C$ using thiophene and toluene precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30∼100 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency ($P_{k}$), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest $P_{k}$ value of plasma polymerized toluene film (85.27% at 70 W) was higher than that of the plasma polymerized thiophene film (65.17% at 100 W), indicating inhibition of oxygen reduction. The densely packed and tightly interconnected toluene film could act as an efficient barrier layer to the diffusion of molecular oxygen. The result of contact angle measurement showed that the plasma polymerized toluene films have more hydrophobic surface than those of the plasma polymerized thiophene films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.79-81
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• 2002

ZnO 나노와이어는 ZnO 파우더를 볼밀 처리하여 열증착 방법으로 $1380^{\circ}C$에서 촉매없이 Si 기판위에서 합성되었다. 합성된 ZnO 나노와이어의 길이와 직경은 $20{\sim}30{\mu}m$와 $50{\sim}200$ nm 였다. ZnO 나노와이어 표면을 atomic layer deposition(ALD) 방법으로 $Al_2O_3$ 박막을 얇게 코팅하였다. 성장온도는 $300^{\circ}C$였고, 사용한 전구체는 Trimethlaluminum(TMA)와 distilled water($H_2O$) 이다. Transmission electron microscopy(TEM) 으로 측정한 $Al_2O_3$ 박막의 두께는 40 nm 로서 매우 균일하게 ZnO 나노와이어에 증착되었음을 알 수 있었다.

• Applied Science and Convergence Technology
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• 제26권6호
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• pp.208-213
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• 2017

Flexible opto-electronic devices are developed on the insulating layer deposited stainless steel (STS) substrates. The silicon dioxide ($SiO_2$) material as the diffusion barrier of Fe and Cr atoms in addition to the electrical insulation between the electronic device and STS is processed using the plasma enhanced chemical vapor deposition method. Noble silver (Ag) films of approximately 100 nm thickness have been formed on $SiO_2$ deposited STS substrates by E-beam evaporation technique. The films then were annealed at $650^{\circ}C$ for 20 min using the rapid thermal annealing (RTA) technique. It was investigated the variation of the surface morphology due to the interaction between Ag films and $SiO_2$ layers after the RTA treatment. The results showed the movement of Si atoms in silver film from $SiO_2$. In addition, the structural investigation of Ag annealed at $650^{\circ}C$ indicated that the Ag film has the material property of p-type semiconductor and the bandgap of approximately 1 eV. Also, the films annealed at $650^{\circ}C$ showed reflection with sinusoidal oscillations due to optical interference of multiple reflections originated from films and substrate surfaces. Such changes can be attributed to both formation of $SiO_2$ on Ag film surface and agglomeration of silver film between particles due to annealing.

• 멤브레인
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• 제33권1호
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• pp.1-12
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• 2023

본 총설은 소수성 불소수지계 분리막의 표면 개질에 대한 개론으로 다양한 표면 개질 방법 및 그 연구 결과를 중점적으로 서술하였다. PTFE로 대표되는 불소수지계 고분자 분리막은 막 증류, 유수 분리, 기체 분리를 포함한 다양한 막 분리 공정에서 사용되어왔다. PTFE 막은 내화학성, 내열성, 높은 기계적 강도와 같은 뛰어난 물성에도 불구하고 소수성 표면 특성으로 인해 기술 적용의 확장에 제한적이다. 친수성 향상을 위해 습식 화학법, 친수성 고분자 코팅, 플라즈마 처리, 조사, 원자층 증착과 같은 다양한 PTFE 표면 개질 방법을 이용하며 이를 통해 불소수지계 분리막의 응용분야가 확장될 수 있다.