• 제목/요약/키워드: Layer transfer process

검색결과 289건 처리시간 0.029초

단속형 재료 공급식 가변 적층 쾌속조형공정 및 장치 개발에 관한 연구 (Investigation into Development of Transfer Type for Variable Lamination Manufacturing Process and Apparatus)

  • 양동열;안동규;이상호;최홍석;박승교;채희창
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 추계학술대회논문집A
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    • pp.760-765
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    • 2001
  • A new rapid prototyping process, as a transfer type of Variable Lamination Manufacturing by using expandable polystyrene foam (VLM-ST), has been developed to reduce building time, apparatus cost including the introduction and the maintenance and additional post-processing. The objective of this study is to propose a VLM-ST process and to develop an apparatus for implementation of the process. Design criteria of the apparatus were defined and the techniques were proposed to satisfy the design criterion. In order to examine the efficiency and applicability of the developed process, various three-dimensional shapes, such as a world-cup logo, a knob shape and a character, Son-o-kong, were fabricated on the apparatus in which unit shape layer (USL) was generated to build up each layer.

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그래핀 원스텝 전사(Graphene One-Step Transfer) 공정 기반 다층 그래핀 잔여분말 제거 기술 연구 (A Study on Residual Powder Removing Technique of Multi-Layered Graphene Based on Graphene One-Step Transfer Process)

  • 우채영;조영수;홍순규;이형우
    • 한국분말재료학회지
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    • 제26권1호
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    • pp.11-15
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    • 2019
  • In this study, a method to remove residual powder on a multi-layered graphene and a new approach to transfer multi-layered graphene at once are studied. A graphene one-step transfer (GOST) method is conducted to minimize the residual powder comparison with a layer-by-layer transfer. Furthermore, a residual powder removing process is investigated to remove residual powder at the top of a multi-layered graphene. After residual powder is removed, the sheet resistance of graphene is decreased from 393 to 340 Ohm/sq in a four-layered graphene. In addition, transmittance slightly increases after residual powder is removed from the top of the multi-layered graphene. Optical and atomic-force microscopy images are used to analyze the graphene surface, and the Ra value is reduced from 5.2 to 3.7 nm following residual powder removal. Therefore, GOST and residual powder removal resolve the limited application of graphene electrodes due to residual powder.

Simulation of oxygen mass transfer in fuel assemblies under flowing lead-bismuth eutectic

  • Feng, Wenpei;Zhang, Xue;Chen, Hongli
    • Nuclear Engineering and Technology
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    • 제52권5호
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    • pp.908-917
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    • 2020
  • Corrosion of structural materials presents a critical challenge in the use of lead-bismuth eutectic (LBE) as a nuclear coolant in an accelerator-driven system. By forming a protective layer on the steel surfaces, corrosion of steels in LBE cooled reactors can be mitigated. The amount of oxygen concentration required to create a continuous and stable oxide layer on steel surfaces is related to the oxidation process. So far, there is no oxidation experiment in fuel assemblies (FA), let alone specific oxidation detail information. This information can be, however, obtained by numerical simulation. In the present study, a new coupling method is developed to implement a coupling between the oxygen mass transfer model and the commercial computational fluid dynamics (CFD) software ANSYS-CFX. The coupling approach is verified. Using the coupling tool, we study the oxidation process of the FA and investigate the effects of different inlet parameters, such as temperature, flow rate on the mass transfer process.

상변화 물질의 용융과정에 있어서 좌표변환을 이용한 온도분포의 해석적 연구 (The finite difference analysis on temperature distribution by coordinate transformation during melting process of phase-change Material)

  • 김준근;임장순
    • 태양에너지
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    • 제5권2호
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    • pp.77-83
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    • 1985
  • An analysis is performed to investigate the influence of the buoyancy force and the thickness variation of melting layer in the containment that is filled with phase-change Material surrounding a cylindrical heating tube during melting process. The phase-change material is assumed to be initially solid at its phase-change temperature and the remaining solid at any given time is still at the phase-change temperature and neglecting the effect of heat transfer occuring within the solid. At the start of melting process, the thickness of melting layer is assumed to be a stefan-problem and after the starting process, the change of temperature and velocity is calculated using a two dimensional finite difference method. The governing equations for velocity and temperature are solved by a finite difference method which used SIMPLE (Semi Implicit Method Pressure linked Equations) algorithm. Results are presented for a wide range of Granshof number and in accordance with the time increment and it is founded that two dimensional fluid flow occurred by natural convection decreases the velocity of melting process at the bottom of container. The larger the radius of heating tube, the higher heat transfer is occurred in the melting layer.

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Nature of Surface and Bulk Defects Induced by Epitaxial Growth in Epitaxial Layer Transfer Wafers

  • Kim, Suk-Goo;Park, Jea-Gun;Paik, Un-Gyu
    • Transactions on Electrical and Electronic Materials
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    • 제5권4호
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    • pp.143-147
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    • 2004
  • Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

Three-Dimensional Nanofabrication with Nanotransfer Printing and Atomic Layer Deposition

  • 김수환;한규석;한기복;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.87-87
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    • 2010
  • We report a new patterning technique of inorganic materials by using thin-film transfer printing (TFTP) with atomic layer deposition. This method consists of the atomic layer deposition (ALD) of inorganic thin film and a nanotransfer printing (nTP) that is based on a water-mediated transfer process. In the TFTP method, the Al2O3 ALD growth occurs on FTS-coated PDMS stamp without specific chemical species, such as hydroxyl group. The CF3-terminated alkylsiloxane monolayer, which is coated on PDMS stamp, provides a weak adhesion between the deposited Al2O3 and stamp, and promotes the easy and complete release of Al2O3 film from the stamp. And also, the water layer serves as an adhesion layer to provide good conformal contact and form strong covalent bonding between the Al2O3 layer and Si substrate. Thus, the TFTP technique is potentially useful for making nanochannels of various inorganic materials.

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Simultaneous Transfer and Patterning of CVD-Grown Graphene with No Polymeric Residues by Using a Metal Etch Mask

  • 장미;정진혁;;이내응
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.642-642
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    • 2013
  • Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

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착상시 핀-관 열교환기의 열적 성능 예측을 위한 해석 (An Analysis for Predicting the Thermal Performance of Fin-Tube Heat Exchanger under Frosting Condition)

  • 이태희;이관수;김우승
    • 설비공학논문집
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    • 제8권2호
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    • pp.299-306
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    • 1996
  • This work presents an analytical model, so called modified LMTD method, to predict the thermal performance of finned-tube heat exchanger under frosting conditions. In this model, the total heat transfer coefficient and effective thermal conductivity of the frost layer were defined as a function of frost surface temperature. The surface temperature of the frost layer formed on the heat exchanger was calculated through the analysis of the heat and mass transfer process in the air and frost layer. To examine the validity of this analytical model, the computed results from the present model, such as heat transfer rate, frost mass and thickness of frost, were compared with the ones of the expermental work and LMED method.

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Boundary layer analysis of persistent moving horizontal needle in Blasius and Sakiadis magnetohydrodynamic radiative nanofluid flows

  • Krishna, Penem Mohan;Sharma, Ram Prakash;Sandeep, Naramgari
    • Nuclear Engineering and Technology
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    • 제49권8호
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    • pp.1654-1659
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    • 2017
  • The boundary layer of a two-dimensional forced convective flow along a persistent moving horizontal needle in an electrically conducting magnetohydrodynamic dissipative nanofluid was numerically investigated. The energy equation was constructed with Joule heating, viscous dissipation, uneven heat source/sink, and thermal radiation effects. We analyzed the boundary layer behavior of a continuously moving needle in Blasius (moving fluid) and Sakiadis (quiescent fluid) flows. We considered Cu nanoparticles embedded in methanol. The reduced system of governing Partial differential equations (PDEs) was solved by employing the Runge-Kutta-based shooting process. Computational outcomes of the rate of heat transfer and friction factors were tabulated and discussed. Velocity and temperature descriptions were examined with the assistance of graphical illustrations. Increasing the needle size did not have a significant influence on the Blasius flow. The heat transfer rate in the Sakiadis flow was high compared with that in the Blasius flow.

완전 자동화된 단속형 가변적층쾌속조형공정을 위한 절단 경로 데이터 생성 (Generation of cutting Path Data for Fully Automated Transfer-type Variable Lamination Manufacturing Using EPS-Foam)

  • 이상호;안동규;김효찬;양동열;박두섭;심용보;채희창
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 추계학술대회 논문집
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    • pp.599-602
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    • 2002
  • A novel rapid prototyping (RP) process, an automated transfer type variable lamination manufacturing process (Automated VLM-ST) has been developed. In Automated VLM-ST, a vacuum chuck and linear moving system transfer the plate type material with two pilot holes to the rotation stage. A four-axis synchronized hotwire cutter cuts the material twice to generate Automated Unit Shape Layer (AUSL) with the desired width, side slopes, length, and two reference shapes in accordance with CAD data. Each AUSL is stacked on the stacking plate with two pilot pins using the pilot holes in AUSL and the pilot pins. Subsequently, adhesive is supplied to the top surface of the stacked AUSL by a bonding roller and pressure is simultaneously applied to the bottom surface of the stacked AUSL. Finally, three-dimensional shapes are rapidly fabricated. This paper describes the procedure for generating the cutting path data (AUSL data) f3r automated VLM-ST. The method for the generation of the Automated Unit Shape Layer (AUSL) in Automated VLM-ST was practically applied and fabricated for a various shapes.

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