• Journal of Advanced Marine Engineering and Technology
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• v.30 no.8
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• pp.927-933
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• 2006

The structural and electrical characteristics of PLZT thin films fabricated onto $Pt/IrO_2/Ir/Ti/SiO_2/Si$ substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films for capacitor layer of semiconductor memory devices The slim region 14/50/50 PLZT thin films were fabricated by PLD and estimated the characteristics for memory application 14/50/50 PLZT thin films have crystallize into perovskite structure at the $600^{\circ}C$ deposition temperature, 200 mTorr of oxygen pressure, and 2 $J/cm^2$ of laser energy density. In this condition PLZT thin films had the dielectric constant as high as 985, storage charge density 8.17 ${\mu}C/cm^2$ and charging time 0.20 ns. Leakage current density was less than $10^{-10}A/cm^2$ up to 5 V bias voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.320.1-320.1
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• 2013

We have investigated the effect of surface passivation for crystalline silicon solar cell using ozone-based atomic layer deposited (ALD) $Al_2O_3$. We examined passivation properties such as uniformity, carrier lifetime, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD). Ozone-based ALD $Al_2O_3$ film shows the best carrier lifetime at lower deposition temperature than $H_2O$-based ALD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.94-95
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• 2007

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program speed, reliability of memory device on interface trap between Si substrate and tunneling oxide was investigated. The devices were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SONOS cell transistors with larger interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. Therefore, to improve SANOS memory characteristic, it is very important to optimize the interface trap and charge trapping layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.139-139
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• 2010

Ionic Transition Metal Complex based (iTMC) Light-emitting electrochemical cells (LEECs) have been drawn attention for cheap and easy-to-fabricate light-emitting device. LEEC is one of the promising candidate for next generation display and solid-state lighting applications which can cover the defects of current commercial OLEDs like complicated fabrication process and strong work-function dependent sturucture. We have investigated the performance characteristics of LEECs based on poly (3, 4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS)-incorporated transition metal complex, which is tris(2, 2'-bipyridyl)ruthenium(II) hexafluorophosphate in this study. There are advantages using conductive polymer-incorporated luminous layer to prevent light disturbance and absorbance while light-emitting process between light-emitting layer and transparent electrode like ITO. The devices were fabricated as sandwiched structure and light-emitting layer was deposited approximately 40nm thickness by spin coating and aluminum electrode was deposited using thermal evaporation process under the vacuum condition (10-3Pa). Current density and light intensity were measured using optical spectrometer, and surface morphology changes of the luminous layer were observed using XRD and AFM varying contents of PEDOT:PSS in the Ruthenium(II) complex solution. To observe enhanced ionic conductivity of PEDOT:PSS and luminous layer, space-charge-limited-currents model was introduced and it showed that the performances and stability of LEECs were improved. Main discussions are the followings. First, relationship between film thickness and performance characteristics of device was considered. Secondly, light-emitting behavior when PEDOT:PSS layer on the ITO, as a buffer, was introduced to iTMC LEECs. Finally, electrical properties including carrier mobility, current density-voltage, light intensity-voltage, response time and turn-on voltages were investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.462-462
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• 2014

The effect of rear passivation for passivated emitter and rear cell (PERC) using ozone and H2O oxidant of atomic layer deposited (ALD) Al2O3 was studied by post-annealing in N2 and forming gas ambients. Rear surface of PERC solar cell was passivated by Al2O3 grown by ALD with ozone and H2O oxidant. Al2O3 grown by ALD with ozone oxidant has been known to have many advantages, such as lower interface defects, low leakage current density. Its passivation quality is better than Al2O3 with H2O. Al2O3 layer with 10 nm and 20 nm thickness was grown at $150^{\circ}C$ with ozone oxidant and at $250^{\circ}C$ with H2O oxidant. And then each samples were post-annealled at $450^{\circ}C$ in N2 ambients and at $850^{\circ}C$ in forming gas ambients. The passivation quality was investigated by measuring the minority carrier lifetime respectively. We examined atomic layer deposited Al2O3 such as growth rate, film density, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using Sinton (WCT-120) by Quasi-Steady State Photoconductance (QSSPC) mode. Ozone-based ALD Al2O3 film shows the best carrier lifetime at lower deposition temperature than H2O-based ALD.

• Applied Chemistry for Engineering
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• v.10 no.2
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• pp.212-217
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• 1999

Porous alumina membrane with asymmetrical structure was prepared by anodic oxidation under constant DC current mode in aqueous solution of sulfuric acid. In order to produce membrane with improved properties, the aluminium plate was pre-treated with thermal oxidation, chemical polishing and electrochemical polishing before anodic oxidation. The thickness and pore diameter of the membrane were controlled by current density and charge density, respectively. The upper layer of 20 nm under of pore diameter was produced under very low current density while the lower layer of 36 nm pore diameter was produced under higher current density. The thickness of the membrane was about $80{\sim}90{\mu}m$ and that of the upper layer was $6{\mu}m$. We found that the mechanism of gas permeation through the membrane depended on Knudsen diffusion.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.7
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• pp.8-13
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• 2009

Plasma enhanced chemical vapor deposition (PECVD) is commonly used for Carbon nanotubes (CNTs) fabrication, and the process can easily be applied to industrial production lines. In this works, we developed novel magnetized radio frequency PECVD system for one line process of CNTs fabrication for charge storable electrode application. The system incorporates aspects of physical and chemical vapor deposition using capacitive coupled RF plasma and magnetic confinement coils. Using this magnetized RF-PECVD system, we firstly deposited Fe layer (about 200[nm]) on Si substrate by sputter method at the temperature of 300[$^{\circ}$] and hence prepared CNTs on the Fe catalyst layer and investigated fundamental properties by scanning electron microscopy (SEM) and Raman spectroscopy (RS). High-density, aligned CNTs can be grown on Fe/Si substrates at the temperature of 600[$^{\circ}$] or less.

• Journal of Powder Materials
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• v.23 no.4
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• pp.317-324
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• 2016

Tin is one of the most promising anode materials for next-generation lithium-ion batteries with a high energy density. However, the commercialization of tin-based anodes is still hindered due to the large volume change (over 260%) upon lithiation/delithiation cycling. To solve the problem, many efforts have been focused on enhancing structural stability of tin particles in electrodes. In this work, we synthesize tin nano-powders with an amorphous carbon layer on the surface and surroundings of the powder by electrical wire explosion in alcohol-based liquid media at room temperature. The morphology and microstructures of the powders are characterized by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and transmission electron microscopy. The electrochemical properties of the powder for use as an anode material for lithium-ion battery are evaluated by cyclic voltammetry and a galvanometric discharge-charge method. It is shown that the carbon-coated tin nano-powders prepared in hexanol media exhibit a high initial charge specific capacity of 902 mAh/g and a high capacity retention of 89% after 50 cycles.

• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.670-674
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• 2012

The photovoltaic performance of solid-state dye-sensitized solar cells employing hole transport material (HTM), 2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenyl-amine)-9,9'-spirobifluorene (spiro-MeOTAD), has been investigated in terms of HTM overlayer thickness. Two important parameters, soak time and spin-coating rate, are varied to control the HTM thickness. Decrease in the period of loading the spiro-MeOTAD solution on $TiO_2$ layer (soak time) leads to decrease in the HTM overlayer thickness, whereas decrease in spin-coating rate increases the HTM overlayer thickness. Photocurrent density and fill factor increase with decreasing the overlayer thickness, whereas open-circuit voltage remains almost unchanged. The improved photocurrent density is mainly ascribed to the enhanced charge transport rate, associated with the improved charge collection efficiency. Among the studied HTM overlayer thicknesses, ca. 230 nm-thick HTM overlayer demonstrates best efficiency of 4.5% at AM 1.5G one sun light intensity.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.753-758
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• 1994

(100) Si and 4$^{\circ}$off (100) Si were oxidized in dry oxygen, and the differences in thermal oxidation behavior and electrical characteristics between two specimens were investigated. Ellipsometer measurements of the oxide thickness produced by oxidation in dry oxygen from 1000 to 120$0^{\circ}C$ showed that the oxidation rates of the 5$^{\circ}$ off (100) Si were more rapid than those of the (100) Si and the differences between them decreased as the oxidation temperature increased. The activation energies based on the parabolic rate constant, B for (100) and 4$^{\circ}$off (100) Si were 25.8, 28.6 kcal/mol and those on the linear rate constant, B/A were 56.8, 54.9 kcal/mol, respectively. Variation of C-V characteristics with the oxidation temperature showed that the flat band voltages were shifted positively and surface state charge densities decreased as the oxidation temperature increased, and the surface state charge density of the 4$^{\circ}$off (100) Si was lower than that of the (100) Si. Also considerable decrease in the density of oxidation induced stacking faults (OSF) for the 4$^{\circ}$off (100) Si was observed through optical microscopy after preferentially etching off the oxide layer.