• Title/Summary/Keyword: Layer Thickness

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Electrical Effects of the Adhesion Layer Using the VDP Process on Dielectric

  • Lee, Dong-Hyun;Pyo, Sang-Woo;Hyung, Gun Woo;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1313-1316
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    • 2005
  • In the present paper, it was investigated that adhesion layer on gate insulator could affect the electrical characteristics for the organic thin film transistors (OTFTs). The polyimide (PI) as organic adhesion layer was fabricated by using the vapor deposition polymerization (VDP) processing . It was found that electrical characteristics improved comparing OTFTs using adhesion layer to another. We researched adhesion layer as a function of thickness. For inverted-staggered top contact structure, field effect mobility, threshold voltage, and on-off current ratio of OTFTs using adhesion layer of PI 15 nm thickness on the gate insulator with a thickness of 0.2 μmμm were about 0.5 cm2/Vscm2/Vs, -0.8 V, and 106106, respectively.

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Effects of ZnO Buffer Layer Thickness on the Crystallinity and Photoluminescence Properties of Rf Magnetron Sputter-deposited ZnO Thin Films (rf 마그네트런 스퍼터링법으로 Si 기판위에 증착한 ZnO 박막의 결정성과 photoluminescence 특성에 대한 Zn 완충층 두께의 영향)

  • Cho, Y.J.;Park, An-Na;Lee, Chong-Mu
    • Korean Journal of Materials Research
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    • v.16 no.7
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    • pp.445-448
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    • 2006
  • Highly c-axis oriented ZnO thin films were grown on Si(100)substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL) and Atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by rf magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

Impact Fracture and Shear Strength Characteristics on Interfacial Reaction Layer of Nb/MoSi2 Laminate Composite

  • Lee, Sang-Pill;Yoon, Han-Ki;Park, Won-Jo
    • International Journal of Ocean Engineering and Technology Speciallssue:Selected Papers
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    • v.3 no.1
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    • pp.35-39
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    • 2000
  • The present study dealt with the relationships among the interfacial shear strength, the thickness of interfacial reaction layer and the impact value of Nb/MoSi2Nb/MoSi2 laminate composites. In addition, the tensile test was conducted to evaluate the fracture strain of Nb/MoSi2Nb/MoSi2 laminate composites. To change the thickness of the reaction layer, Nb/MoSi2Nb/MoSi2 laminate composites alternating sintered MoSi2 layers and Nb foils were fabricated as the parameter of hot press temperature. It has been found that the growth of the reaction layer increases the interfacial shear strength and decreases the impact value by localizing a plastic deformation of Nb foil. There also exist appropriate shear strength and the thickness of the reaction layer, which are capable of maximizing the fracture energy of Nb/MoSi2Nb/MoSi2.

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A Study on Determination of Damping Layer Thickness to Reduce Heavy Impact Noise in Apartment Building Floors (공동주택 층간 중량충격소음의 효율적 저감을 위한 바닥구조 감쇠층 두께 선정에 관한 연구)

  • Shin, Yun-Ho;Kim, Kwang-Joon;Kim, Min-Bae;Nam, Dae-Ho
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2005.11a
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    • pp.936-941
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    • 2005
  • Apartment building floor with a damping layer can be modeled as a sandwich plate. In order to reduce low frequency noise more efficiently due to heavy impact on such a floor, thickness of the damping layer needs to be optimized at the design stage. Modal loss factors are determined in this paper by RKU equation which is popular In sandwich plate theories. Optimum damping layer thickness determined at each mode is weighted so that several modes in the frequency range of interest can be included in a more systematic way. Furthermore, to reflect frequency-dependent characteristics of complex stiffness of the damping layer, an iteration method is proposed in finding modal frequencies.

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Electrical Properties of Organic Photovoltaic Cell using CuPc/C60C60 double layer (CuPc/C60C60 이중층을 이용한 유기 광기전 소자의 전기적 특성)

  • Lee, Dong-Shin;Park, Yong-Pil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2008.05a
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    • pp.744-746
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    • 2008
  • Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/C60C60/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/Cu60Cu60 heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm C60C60/Al, which has a thickness ratio (CuPc:C60C60) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

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Relation of Luminance by Insulator and Phosphor Layer with Thin Type (형광층 및 절연층의 두께에 의한 휘도특성)

  • 박수길;조성렬;손원근;박대희;이주성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.85-88
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    • 1998
  • Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator(e.g., digital clocks, meter readout) and display systems(e.g., instrument panels, TV display), the application being determined by the light -output capability and size availability(cost) of the particular device. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. Also in order to maximize even surface emission, various sieving process are introduced. Very similar phosphor particle size is selected. Luminance by various wave intensity is also investigated. 150cd/m22 luminance are investigated in stable voltage and frequency.

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Modeling and simulation on an IR absorbing structure with the cascaded transmission line model (전송선 이론에 의한 적외선 흡수 구조체의 흡수율 모의시험)

  • Park, Seung-Man
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.12
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    • pp.1725-1729
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    • 2013
  • In this paper, the modeling and simulation of infrared absorption in an infrared absorbing structure with the cascaded transmission line model were carried out. Each layer in the infrared absorbing structure can be modeled as a characteristic impedance of the cascaded transmission line model. The simulation results show that the cavity thickness to get a maximum absorption should be less than a quarter wavelength, which is somewhat different from prevalent thickness. It can be assured that the sheet resistance of an absorbing layer to get a maximum absorption is 377Ω/, that the thickness of the absorbing layer dose not affect the spectral characteristics of absorption. It is also shown that the thickness of the active layer is not critical to the IR absorption. It can also be assured that the validation of this modeling is proved in comparison with the previous results from similar absorbing structures.

Quench characteristics of thin film type SFCLs with shunt layers of various thickness (션트박막 두께에 따른 박막형 초전도 한류소자의 ?치특성)

  • 김혜림;이승엽;차상도;최효상;현옥배
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2003.02a
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    • pp.51-54
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    • 2003
  • We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa2Cu3O7 thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

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Quench characteristics of thin film type SFCLs with shunt layers of various thickness (션트박막 두께에 따른 박막형 초전도 한류소자의 ?치특성)

  • 김혜림;이승엽;차상도;최효상;현옥배
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2003.02a
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    • pp.242-245
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    • 2003
  • We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa2Cu33O7 thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

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Adaptive sliding mode control with self-tuning the boundary layer thickness (자기동조 경계층 범위를 갖는 적응 슬라이딩모드 제어)

  • Park, Jae-Sam
    • Journal of Institute of Control, Robotics and Systems
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    • v.6 no.1
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    • pp.8-14
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    • 2000
  • In this paper, three adaptive sliding mode control algorithms, which self-tune both the sliding mode gain and the boundary layer thickness, are proposed. The first algorithm uses a gain adaptation rule is combined with the boundary layer thickness adaptatioin rule to satisfy the sliding condition. In the third algorithm, the computation burden of the second algorithm is reduced further, and therefore no extra cost is required for real-time implementation. Due to the mixed sliding mode gain and the boundary layer thickness adaptation scheme, the tracking error and the chattering of the control input can be reduced greatly.

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