• Journal of Advanced Marine Engineering and Technology
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• 제32권3호
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• pp.461-467
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• 2008

It was studied the effect of a pre-deposited ultrathin Al layer as part of a buffer layer for the growth of GaN. AlN buffer layers were deposited on a Si(111) substrate using an RF sputtering technique, followed by GaN using hydride vapor phase epitaxy (HVPE). Several atomic layers of Al were deposited prior to AlN sputtering and the samples were compared with the others grown without pre-deposition of Al. And it was also studied the influence of AlN buffer layer thickness on the growth of GaN. The peak wavelength of the photoluminescence (PL) was varied with increasing the thickness of the GaN and AlN layers. The optimum thickness of AlN on a Si(111) substrate with an ultrathin Al layer was about $260{\AA}$. Scanning electron microscope (SEM) images showed coalescent surface morphology and X-ray diffraction (XRD) showed a strongly oriented GaN(0002) peak.

• 한국결정학회지
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• 제14권2호
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• pp.93-104
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• 2003

The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows ｛10-11｝｛10-10｝(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and ｛10-11｝planes were etched strongly due to the N-polarity and ｛10-10｝ plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with ｛10-11｝plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.

• 한국패류학회지
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• 제31권2호
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• pp.83-92
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• 2015

본 연구는 북방전복 육상 수조 내 고밀도 중간양성 방법을 모색하기 위해 부착면적 확대를 위해 다단식 shelter 설치와 수조 내 중층 이상의 가두리를 설치하여 성장을 비교하고 아울러 전복류 육상 양성방법인 'shallow race way' 국내 도입 가능성을 조사하였다. Shelter 실험구는 PE (polyethylene) 재질의 shelter ($63{\times}98cm$) 1층형 (the single layer shelter, SLS), 2층형 (the double layer shelter, DLS), 3층형 (the triple layer shleter, TLS) 과 육상 가두리 양성방식 (the single layer shelter and net cage culture, SLSNC), 그리고 'shallow race way' 방식을 polyvinyl chloride (PVC)로 제작하여 고랑수로양성 (culture of the ditch raceway tank, CDRT)과 편평한 수로양성 (culture of the floor raceway tank, CFRT) 방식을 설정하였으며, 실험구는 모두 2반복으로 실시되었다. 각 실험구별 SLS 기준 60%밀도로 수용한 실험 전복 (최초 수용 시 평균각장 $25.19{\pm}0.50mm$, 중량 $1.93{\pm}0.14g$), 성장에서 각장의 절대성장율 (absolute growth rate, ARG), 일간성장율 (daily growth rate, DGR) 및 순간성장율 (specific growth rate, SGR) 과 중량의 증중률 (weight gain, WG), 일간증중률 (daily weight gain, DWG) 에서 SLSNC 제외한 모든 실험구가 유의적인 차이가 없었다. 그리고 생존율에서는 CDRT와 CFRT가 유의적으로 낮았다 (P < 0.05). 따라서 shelter를 이용하여 부착면적을 확대한 고밀도 전복치패 육상 중간육성 사육 시 단층과 다단층에서 성장과 생존율에서 차이가 없으며, 호주 등에서 사용되는 shelter 없는 'shallow race way'의 얇은 수심사육은 국내 북방전복 육상 중간양성 방식으로 도입하기에 적합하지 않는 것으로 판단된다.

• 한국환경생태학회지
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• 제29권2호
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• pp.279-291
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• 2015

This study analyzed the growth characteristics of multi-layer planted trees through their growth analysis and attempted to present a management strategy. The subject of research is the Citizen's Forest Area of Seoul Forest Park located in Seoul City. Field surveys were conducted three times over eight years from 2005 when the Seoul Forest Park was created through 2013. Labels were attached to all trees in the target area, and their species, height and DBH were investigated. To identify the growth differences by trees in each area, a detailed tree location map was drawn up for use in the analysis. To check soil health, soil organic matter, soil pH and soil microbial activities were analyzed. It turned out that the growth of the multi-layer planted trees in the target area of research was higher than that of the trees in existing urban parks, and that it was similar to that of trees in natural forests. Through a field survey in the area with a remarkably low growth, high-density planting problem, soil was found to have excess-moisture and there was the problem of Pueraria lobata covering. As a result of the analysis of the soil, it was found that its organic content in the soil was lower; soil pH was higher; and microbial activities in the soil were lower when compared to that of natural forests.

• Nuclear Engineering and Technology
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• 제45권7호
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• pp.827-838
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• 2013

Interaction layer growth between U-Mo alloy fuel particles and Al in a dispersion fuel is a concern due to the volume expansion and other unfavorable irradiation behavior of the interaction product. To reduce interaction layer (IL) growth, a small amount of Si is added to the Al. As a result, IL growth is affected by the Si content in the Al matrix. In order to predict IL growth during fabrication and irradiation, empirical models were developed. For IL growth prediction during fabrication and any follow-on heating process before irradiation, out-of-pile heating test data were used to develop kinetic correlations. Two out-of-pile correlations, one for the pure Al matrix and the other for the Al matrix with Si addition, respectively, were developed, which are Arrhenius equations that include temperature and time. For IL growth predictions during irradiation, the out-of-pile correlations were modified to include a fission-rate term to consider fission enhanced diffusion, and multiplication factors to incorporate the Si addition effect and the effect of the Mo content. The in-pile correlation is applicable for a pure Al matrix and an Al matrix with the Si content up to 8 wt%, for fuel temperatures up to $200^{\circ}C$, and for Mo content in the range of 6 - 10wt%. In order to cover these ranges, in-pile data were included in modeling from various tests, such as the US RERTR-4, -5, -6, -7 and -9 tests and Korea's KOMO-4 test, that were designed to systematically examine the effects of the fission rate, temperature, Si content in Al matrix, and Mo content in U-Mo particles. A model converting the IL thickness to the IL volume fraction in the meat was also developed.

• Journal of Electrical Engineering and Technology
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• 제6권2호
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• pp.280-283
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• 열처리공학회지
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• 제11권4호
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• pp.258-267
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• 1998

For the purpose of investigating the growth characteristics and composition of nitrides, gas nitridings of the austenitic stainless steel, STR 36 heat resisting steel and martensitic stainless steel are investigated at the temperature ranges between $500^{\circ}C$ and $675^{\circ}C$ for 5hours under the $75%NH_3+5%CO_2+20%$Air gas atmosphere. When gas nitriding the austentic stainless steel and STR 36 heat resisting alloy, the abnormal growth behavior of compound layer deviating from the conventional diffusion law with increasing temperature appears, while the compound layer of martensitic stainless steel shows the normal diffusional growth behavior. From the examination of microstructure, X-ray diffraction and hardness test, it is concluded that the abnormal growth behavior of compound layer with increasing temperature induces from the formation and dissolution of CrN and ${\gamma}^{\prime}-Fe_4N$ at the nitriding temperature ranges of $600{\sim}650^{\circ}C$.

• 공업화학
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• 제7권2호
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• pp.308-314
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• 1996

경막형 결정화기에서 벤젠-시클로헥산 혼합물로부터 벤젠의 결정성장속도가 조사되었다. 결정성장속도는 경막결정화기의 냉각벽에 부착되는 결정의 양으로부터 얻어진 결정두께와 시간에 대한 상관관계식으로부터 결정되었다. 결정성장속도와 결정의 표면온도와, 용융액의 온도의 차로 정의되는 과냉각정도와의 상관관계가 얻어졌다. 이 이성분 공융계에 대한 결정성장속도는 과냉각정도의 2승에 비례하였다. 경막결정화기의 열전달 및 물질전달 속도에 근거하여 결정의 표면온도 및 결정두께를 예측할 수 있는 모델식이 제시되었다. 5wt% 및 10wt%의 시클로헥산을 포함한 벤젠-시클로헥산 혼합물에 대하여 여러 다른 냉각온도에서 실험적으로 얻어진 결정두께의 자료와 모델식으로 계산된 결과가 비교되었다.

• 공업화학
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• 제8권3호
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• pp.389-394
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• 1997

경각형 결정화에 의하여 벤젠-사이클로헥산 혼합물로부터 벤젠의 결정화에서 결정에 내포된 불순물(사이클로헥산)의 분포가 조사되었다. 결정의 순도에 미치는 결정성장속도의 영향을 파악하였으며 모든 실험결과는 Wintermantel 모델에 의해 도시될 수 있었다. 결정의 순도는 과냉각 정도가 클수록, 주입조성이 낮을 수록, 결정성장속도가 클 수록 낮았으며 결정성장속도는 불순물의 내포를 지배하는 가장 중요한 변수이다. 결정화 초기에 형성된 결정은 불순물을 많이 내포하고 있으며 결정의 두께가 증가함에 따라 불순물은 잔여용융액쪽으로 이동되어 배제됨을 알 수 있었다. 경막결정화에서 결정에 내포된 불순물은 일정두께의 결정층에 온도구배를 이용하여 결정을 부분용해시키면 불순물의 확산에 의하여 제거될 수 있음을 알 수 있었다.

• Progress in Superconductivity
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• 제7권2호
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• pp.120-129
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• 2006

We comparatively studied the epitaxial growth conditions of $CeO_2$ and $Y_2O_3$ thin buffers on textured Ni tapes using rf magnetron sputtering and investigated the feasibility of getting a single mixture layer or sequential layers of $CeO_2$ and $Y_2O_3$ for more simplified buffer architecture. All the buffer layers were first deposited using the reducing gas of $Ar/4%H_2$ and subsequently the reactive gas mixture of Ar and $O_2$, The crystalline quality and biaxial alignment of the films were investigated using X-ray diffraction techniques (${\Theta}-2{\Theta},\;{\phi}\;and\;{\omega}\;scans$, pole figures). The $CeO_2$ single layer exhibited well developed (200) epitaxial growth at the condition of $10%\;O_2$ below an $450^{\circ}C$, but the epitaxial property was decreased with increasing the layer thickness. $Y_2O_3$ seldom showed optimum condition for (400) epitaxial growth. The sequential architecture of $CeO_2/Y_2O_3/CeO_2$ having good epitaxial property was achieved by sputtering at a temperature of $700^{\circ}C$ on the initial $CeO_2$ bottom layer sputtered at $400^{\circ}C$. Cracking of the sputtered buffer layers was seldom observed except the double layer structure of $CeO_2/Y_2O_3$.