• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.250-253
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• 1990

A single-crystalline epitaxial film of GaAs has been grown on Si using an ionized cluster beam technique. The native oxide layer on the silicon substrate was removed at $550^{\circ}C$ by use of an accelerated arsonic ion beam, instead of a high-temperature desorption. During the growth the substrate temperature was maintained at $550^{\circ}C$. Transmission electron microscopy and electron diffraction data suggest that the eats layer is an epitaxially grown single-crystalline layer.

• 한국세라믹학회지
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• 제30권12호
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• pp.1029-1038
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• 1993

The microstructures of aluminas, included of dissolved CaO as $\alpha$-alumina seeded pseudo-boehmite hydrosol was gelled in plaster mold and doped of MgO as dipping of calcines(120$0^{\circ}C$-2h) into Mg-nitrate solution, were compared to the one of which additives are excluded during the gellation. It was formed the boundary layer of 300~350${\mu}{\textrm}{m}$ distance from surface to the inside, containing of approximately 500ppm CaO by dissolved Ca from plaster mold. As the MgO addition to the boundary layer with dissolved CaO, the microstructure of the layer was uniformed and inhibited the grian growth, compared to one of that additives be excluded specimen and of MgO doped-inside region. This result was considered as abnormal grain growth and effect of flat boundary formation be appeared by effects of dissolved CaO, were decreased by MgO co-doping.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -3
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• pp.1851-1854
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• 2002

The Internet with conventional routing scheme cannot meet user demands driven from drastic growth in the Internet user and various service and traffic type. MPLS(Multi Protocol Label Switching) was introduced to the Internet fur solution to resolve this problem. MPLS is a paradigm to integrate higher layer’s software routing functions including layer-3 routing with layer-2 switching. But, the exponential growth of Internet traffic brings out of label space. One scalable solution to cope with this problem is to introduce flow merge technique, i. e. a group of flows is forwarded using the same label. Specially, IETF(Internet Engineering Task Force) recommends that ATM based MPLS system may include VC merge function, so it is scalable to increase of internet traffic. We implemented the MPLS LER system that includes the look-up and forwarding function in incoming path and VC merging function and limited traffic management function in outgoing path. This paper describes the implementation of the LER’s outgoing parts.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• 한국표면공학회지
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• 제27권5호
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• pp.303-311
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• 1994

In this study, the factors, such as coating temperature T(K), reaction time t(sec) and mobile carbon content $C^*$ (wt%) of steels affecting, the growth rate of carbide layer were investigated in the reactive deposition and diffusion coating using the fluidized bed. From the results, the coating thickness d(cm) can be expressed by an equation. d=$C^*$$(KT)^{1/2}$, where K=K$\circ$exp(~Q/RT), KTEX>$\circ$ = 1.4$\times$$10^{-2}cm^{-2}$/sec, and Q=46Kcal/ mol. It was in a good aggrement with the experimental results, reguardless of the diffusion coating method and the carbide layer. Therefore, if the mobile carbon content of carbon steels and alloyed steels is known, the thickness under coating conditions can be predicted from the previous equation.

• Bulletin of the Korean Chemical Society
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• 제22권11호
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• pp.1192-1196
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• 2001

A diaphorase enzyme electrode for the catalytic reduction of NAD+ , the oxidized form of nicotinamide adenine dinucleotide, has been prepared. The enzyme layer grew spontaneously over an aminoethanethiol self assembled monolayer on a go ld plate electrode. The growth was accomplished by simply dipping the electrode covered by the aminoethanethiol monolayer into a solution containing both glutaraldehyde and diaphorase. We suggested that the glutaraldehyde as a cross-linking reagent was attached to the amino groups of the aminoethanethiol monolayer and the diaphorase enzyme molecules were bound to free aldehyde groups of the glutaraldehyde. Further attachments of the enzyme molecules over the bound enzyme molecules continued with the bridging of the glutaraldehyde. In frequency measurements with a quartz crystal microbalance, the frequency decrease was much more than it was for that of the enzyme monolayer formation, and an enzyme layer thicker than a monolayer was formed. The modified electrode was employed to reduce NAD+ , using diffusional methyl viologen as an electron transfer mediator. The NAD+ was electrocatalytically reduced, and the catalytic current was almost equivalent to that with the multilayered electrode of ten enzyme layers.

• 한국결정성장학회지
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• 제22권2호
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• pp.65-72
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• 2012

본 연구에서는 비정질 실리콘의 알루미늄 유도 결정화(AIC)가 시도되었다. 결정질 실리콘의 좀 더 큰 입자를 얻기 위해, 선택적인 핵생성(Selective nucleation) 시도는 비정질 실리콘 밑의 실리카($SiO_2$) 층의 습식 파우더 분사 처리와 함께 진행됐다. 또한 니켈 층은 실리콘 원자가 알루미늄 층으로 이동하는 것을 방지하기 위한 확산 방지막(Diffusion barrier)으로 선택되었다. $520^{\circ}C$에서 열처리를 한 후에 XRD 분석을 통해 Si(111) 방향으로 결정화된 결정질 실리콘을 확인했고 니켈은 실리콘과 알루미늄 사이의 확산 방지막으로 매우 효과적인 재료라는 것을 입증하였다. 이 연구는 고성능의 태양전지에 적용하는 결정질 실리콘 막의 좀 더 큰 입자를 얻기 위한 방법 중의 하나라고 기대된다.

• 한국주조공학회지
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• 제22권2호
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• pp.89-96
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• 2002

This study examined the effects of adding Zn to Sn-3.5Ag solder on the microstructure changes and behavior of interface reaction of the solder joint with Cu substrate. The solder/Cu joints were examined with microscope to observe the characteristics of microstructure changes and interfacial reaction layer with aging treatment for up to 120 days at $150^{\circ}C$. Results of the microstructure changes showed that the microstructures were coarsened with aging treatment, while adding 1%Zn suppresses coarsening microstructures. The Sn-3.5Ag/Cu had a fast growth rate of the reaction layer in comparison with the Sn-3.5Ag-1Zn at the aging temperature of $150^{\circ}C$. Through the SEM/EDS analysis of solder joint, it was proved that intermetallic layer was $Cu_6Sn_5$ phase and aged specimens showed that intermetallic layer grew in proportion to $t^{1/2}$, and the precipitate of $Ag_3Sn$ occur to both inner layer and interface of layer and solder. In case of Zn-containing composite solder, $Cu_6Sn_5$ phase formed at the side of substrate and Cu-Zn-Sn phase formed at the other side in double layer. It seems that Cu-Zn-Sn phase formed at solder side did a roll of banrier to suppress the growth of the $Cu_6Sn_5$ layer during the aging treatment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• 한국결정성장학회지
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• 제12권6호
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• pp.269-269
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• 2002

희박 자성 반도체 ZnMnTe를 장벽층으로 사용한 양질의 ZnTe/ZnMnTe 단일 양자우물 구조를 열벽적층 성장법으로 성장하였다. 고분해능 X-선 회절측정 결과 ZnTe 우물층이 강하게 스트레인을 받고 있음을 알 수 있었다. 광발광 측정으로부터 무거운 양공 엑시톤 (el-hhl)과 가벼운 양공 엑시톤 (el-lhl)의 매우 뾰족한 발광 크들이 나타남을 관측하였다. 또한 우물층의 두께가 증가함에 따라 (el-hhl)과 (el-lhl)의 엑시톤 관련 피크들은 낮은 에너지 쪽으로 이동하였다. 광발광 피크 세기의 온도에 따른 변화는 운반자들의 열적 활성화로 설명할 수 있었다.