• Journal of Welding and Joining
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• v.15 no.3
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• pp.128-135
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• 1997

Reaction diffusion and formation of $Ni_3Al$phase with $L1_2$ structure have been studied in temperature range of 1432K to 1573K using the diffusion couple of (Ni-40, 5at%Al)/(Ni-14, 1at%Al) and (Ni-49, 2at%Al)/ (Nickel). The layer growth of Ni$_{3}$Al pyhase in the annealed diffusion couple was measured by optical microscope and electron probe microanalyzer (EPMA). The layer growth of $Ni_3Al$phase in diffusion zone obeyed the parabolic law without any indication of grain boundary effects. The layer growth of $Ni_3Al$phase in temperature range of 1423K to 1573K was mainly controlled by the volume diffusion mechanism. The rate of layer growth of $Ni_3Al$phase was found to be colsely related to the composition of intermetallic compound NiAl phase. The activation energy for layer growth of $Ni_3Al$phase was calculated to be 127kJ/mol.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.148-149
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• 2012

This paper reports doping of carbon atoms in GaN layer, which based on dimethylhydrazine (DMHy) and growth temperature. It is well known that dislocations can act as non-radiative recombination center in light emitting diode (LED). Recently, many researchers have tried to reduce the dislocation density by using various techniques such as lateral epitaxial overgrowth (LEO) [1] and patterned sapphire substrate (PSS) [2], and etc. However, LEO and PSS techniques require additional complicated steps to make masks or patterns on the substrate. Some reports also showed insertion of carbon doped layer may have good effect on crystal quality of GaN layer [3]. Here we report the growth of GaN epitaxial layer by inserting carbon doped GaN layer into GaN epitaxial layer. GaN:C layer growth was performed in metal-organic chemical vapor deposition (MOCVD) reactor, and DMHy was used as a carbon doping source. We elucidated the role of DMHy in various GaN:C growth temperature. When growth temperature of GaN decreases, the concentration of carbon increases. Hence, we also checked the carbon concentration with DMHy depending on growth temperature. Carbon concentration of conventional GaN is $1.15{\times}1016$. Carbon concentration can be achieved up to $4.68{\times}1,018$. GaN epilayer quality measured by XRD rocking curve get better with GaN:C layer insertion. FWHM of (002) was decreased from 245 arcsec to 234 arcsec and FWHM of (102) decreased from 338 arcsec to 302 arcsec. By comparing the quality of GaN:C layer inserted GaN with conventional GaN, we confirmed that GaN:C interlayer can block dislocations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.281-283
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• 2001

$Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.281-283
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• 2001

Bi$_2$Sr$_2$CuO$\_$x/(Bi-2201) thin films were fabricated layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to SrBi$_2$O$_4$ by in-situ anneal.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.222-225
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• 2010

The preparation of tin oxide thin films by atomic layer deposition (ALD), using a tetrakis (ethylmethylamino) tin precursor, and the effects of a seed layer on film growth were examined. The average growth rate of tin oxide films was approximately 1.2 to 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreased at the substrate temperature at $200^{\circ}C$. A seed effect was not observed in the crystal growth of tin oxide. However, crystallinity and the growth of seed material were detected by XPS after thermal annealing. ALD-grown seeded tin oxide thin films, as-deposited and after thermal annealing, were characterized by X-ray diffraction, atomic force microscopy and XPS.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1461-1466
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• 2003

This paper presents the effects of the fin array and pitch on the frost layer growth of a heat exchanger. The numerical results are compared with experimental data of a cold plate to validate the present model, and agree well with experimental data within a maximum error of 8%. The characteristics of the frost formation on staggered fin array are somewhat different from those of in-line array. The frost layer at the first fin of the in-line array grows rapidly, compared to second fin, whereas the difference of the frost layer growth between the fins of the staggered array is small. For fin pitch below 10 mm, the frost layer growth of second fin in the staggered array is affected by that of first fin. The frost layer growth and heat transfer of single fin deteriorate with decreasing fin pitch regardless of fin array, however, the thermal performance of a heat exchanger, considering increase of heat surface area, becomes better.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.15 no.9
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• pp.711-717
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• 2003

This paper presents the effects of the fin array and pitch on the frost layer growth of a heat exchanger. The numerical results are compared with experimental data of a cold plate to validate the present model, and agree well with experimental data within a maximum error of 8%. The frost behaviors of the staggered fin array are somewhat different from those of in-line array. The frost layer formed on the first fin of the in-line array grows rapidly, compared to second fin, whereas the difference of the frost layer growth between the fins of the staggered array is small. For fin pitch below 10 m, the frost layer growth of second fin in the staggered array is affected by that of first fin. The thickness of the frost layer and heat transfer of single fin are reduced with decreasing fin pitch regardless of fin array. However, the thermal performance of a heat exchanger is enhanced due to the increase of heat transfer surface area.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.8
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• pp.692-697
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• 2016

This study investigated the effect of surface roughness of zinc oxide (ZnO) layer on the growth of polycrystalline Si layer via an Al-induced layer exchange process. It was found that the growth rate, grain size, crystallization fraction, and preferential orientation of the polycrystalline Si layer were strongly influenced by the surface roughness of the underlying ZnO layer. As the roughness of the ZnO surface increased, a higher growth rate (~40 min) and preferential Si (100) orientation were obtained because of the spatial concentration fluctuations in the Al-Si alloy, induced by the surface roughness of the underlying ZnO layer.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.14 no.3
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• pp.261-267
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• 2002

The integral boundary layer equation for the air side and the diffusion equation for the frost layer are numerically analyzed in order to predict the behavior of frost layer growth. The thickness and density of the frost layer obtained from the present study agree well with those of previous numerical results and experimental data with a maximum error of 13%. The characteristics of heat and mass transfer within the frost layer and the frost layer growth along the flow direction are investigated by performing numerical analysis. The effects of operating conditions on the frost layer growth are also examined.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.119-121
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• 2002

$Bi_2Sr_2CuO_x$ thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method, 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.