• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1546-1551
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• 2004

This paper presents a mathematical model to predict the frost properties and heal and mass transfer within the frost layer formed on a cold plate. The laminar flow equations for the air-side are analyzed. and the empirical correlations of local frost properties are employed in order to predict the frost layer growth. The correlations of local frost density and effective thermal conductivity of frost layer, obtained from various experimental conditions, are derived as functions of various frosting parameters (Reynolds number, frost surface temperature, absolute humidity and temperature of moist air, cooling plate temperature, and frost density). The numerical results are compared with experimental data and the results of various models to validate the present model, and agree well with experimental data within a maximum error of 10%. The heat and mass transfer coefficients obtained from the numerical analyses are presented, as the results, it is found that the model for frost growth using the correlation of heat transfer coefficient without solving air flow have a limitation in its application.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.40-43
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• 2014

We investigated the growth characteristics and interfacial properties of $HfO_2$ films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of $HfO_2$ grown on a $GeO_2/Ge$ substrate through ALD is similar to that grown on an $SiO_2/Si$ substrate. However, the incubation period of $HfO_2$ deposition on Ge is shorter than that on Si. The $HfO_2$ grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at $700^{\circ}C$. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.3
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• pp.376-383
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• 1986

In this paper, we show that the growth rate of MBE GaAs epitaxial layer is controlled entirely by the flux density of the Ga beam, impinging on the substrate surface, and is linearly proportional to the Ga effusion cell temperature and the growth time. According to our investigation of the epitaxial layer surfvace through RHEED, AES, SIMS and SEM, if the growth temperature is maintained above 590\ulcorner, the surface crystal structure, flathness and stoichiometry become significantly enhanced, and the epilayer surface has a smooth mirror-like appearance.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.627-630
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• 2002

Bi$_2$Sr$_2$CuOx(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bean sputtering method. 10 wt% and 90 wt% ozone mired with oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.237.2-237.2
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• 2016

A pure hafnium-carbide (HfC) coating layer was deposited onto carbon/carbon (C.C) composites using a vacuum plasma spray system. By adopting a SiC buffer layer, we successfully integrated C.C composites with a $100-{\mu}m-thick$ protective coating layer of HfC. Compared to the conventional chemical vapor deposition process, the HfC coating process by VPS showed increased growth rate, thickness, and hardness. The growth behavior and morphology of HfC coatings were investigated by FE-SEM, EDX, and XRD. From these results, it was shown that the addition of a SiC intermediate layer provided optimal surface conditions during the VPS procedure to enhance adhesion between C.C and HfC (without delamination). The thermal ablation test results shows that the HfC coating layer perfectly protected inner C.C layer from thermal ablation and oxidation. Consequently, we expect that this ultra-high temperature ceramic coating method, and the subsequent microstructure that it creates, can be widely applied to improve the thermal shock and oxidation resistance of materials under ultra-high temperature environments.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.5
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• pp.247-252
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• 2002

$(Pb_{1-x}La_x)TiO_3$ (x = 0.1) thin films were prepared on ITO-coated glass substrates by metal organic chemical vapor deposition using ultrasonic spraying. Effects of the post-annealing and the seeding layer on crystallization, microstructures and electrical properties of thin films were investigated. Dielectric constants of films increased due to the modification of crystallization and the changing of a surface morphology by applying the post-annealing. In addition, as the application of PT seed- ing layer offered nucleation sites to PLT thin films, electrical properties of films were enhanced by the increase of crys-tallinity and grain size. The dielectric constant of the films post-heated for 60 min and with a seeding layer was 213 at 1 kHz.

• Microbiology and Biotechnology Letters
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• v.13 no.3
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• pp.213-221
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• 1985

The effects of ginseng extract, crude saponin and ether layer fraction on the alcohol fermentation and the growth of Zymomonas mobilis studied. The growth of Zymomonas mobilis was inhibited by the addition of ginseng extract, crude saponin and ether layer fraction, of which the last was shown to have the most inhibitory effect. The pH cultural broth recorded a significant decrease during 36 hrs alcohol fermentation, followed by a slower decrease in pH after 36 hrs. The alcohol fermentation was stimulated most remarkably by the addition of 0.305％ crude saponin, while inhibited most by the addition of 0.228％ ether layer fraction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.503-504
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• 2007

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2)superconducting thin films have been fabricated by atomic layer-by-layer deposition at an ultra low growth rate using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of $1{\sim}9{\times}10^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.299.2-299.2
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• 2013

We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.

• Journal of Electrochemical Science and Technology
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• v.14 no.2
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• pp.162-173
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• 2023

Aqueous zinc-ion batteries are considered as promising alternatives to lithium-ion batteries for energy storage owing to their safety and cost efficiency. However, their lifespan is limited by the irreversibility of Zn anodes because of Zn dendrite growth and side reactions such as the hydrogen evolution reaction and corrosion during cycling. Herein, we present a strategy to restrict direct contact between the Zn anode and aqueous electrolyte by fabricating a protective layer on the surface of Zn foil via phosphidation method. The Zn₃(PO₄)₂ protective layer effectively suppresses Zn dendrite growth and side reactions in aqueous electrolytes. The electrochemical properties of the Zn₃(PO₄)₂@Zn anode, such as the overpotential, linear polarization resistance, and hydrogen generation reaction, indicate that the protective layer can suppress interfacial corrosion and improve the electrochemical stability compared to that of bare Zn by preventing direct contact between the electrolyte and the active sites of Zn. Remarkably, MnO₂ Zn₃(PO₄)₂@Zn exhibited enhanced reversibility owing to the formation a stable porous layer, which effectively inhibited vertical dendrite growth by inducing the uniform plating of Zn²⁺ ions underneath the formed layer.