• 대한기계학회논문집B
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• 제33권7호
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• pp.527-534
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• 2009

Flame stabilization characteristics were experimentally investigated in a fuel-air cross flowing mixing layer. A combustor consists of a narrow channel of air steam and a cross flowing fuel. Depending on the flow rates of methane and air, flame can be stabilized in two modes. First is an attached flame which is formulated at the backward step where the methane and air streams meet. Second is a lifted-flame which is formulated within the mixing layer far down steam from backward step. The heights and flame widths of the lifted flames were measured. Flame shapes of the lifted flames were similar to an ordinary edge flame or a tribrachial flame, and their behavior could be explained with the theories of an edge flame. With the increase of the mixing time between fuel and air, the fuel concentration gradient decreases and the flame propagation velocity increases. Thus the flame is stabilized where the flow velocity is matched to the flame propagation velocity in spite of a significant disturbance in the fuel mixing and heat loss within the channel. This study provides many experimental results for a higher fuel concentration gradient, and it can also be helpful for the development and application of a smaller combustor.

• 반도체디스플레이기술학회지
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• 제13권1호
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• pp.43-49
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• 2014

Zinc-tin oxides (ZTO) thin film transistors have been fabricated at different process pressure via re sputtering technique. TFT properties were improved by depositing channel layers at lower pressure. From the analysis of TFTs comprised of multi layer channel, deposited consecutively at different sputtering pressure, it was suggested that the electrical characteristics of TFTs were mainly affected by interfacial layer due to their high conductance, however, the stability under the NBIS condition was influenced by whole bulk layer due to low concentration of positive charges, which might be generated by the oxygen vacancy transition, from Vo0 to $Vo^{2+}$. Those improvements were attributed to increasing sputtered target atoms and decreasing harmful effects of oxygen molecules by adopting low sputtering pressure condition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.222-222
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• 2010

Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 학술대회 논문집 전문대학교육위원
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• pp.165-168
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• 2005

In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current satulation. When electron velocity is saturated, deletion layer is still open channel and it plays a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.

• Korea-Australia Rheology Journal
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• 제15권2호
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• pp.83-90
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• 2003

In cases of the microfluidic channel, the electrokinetic influence on the transport behavior can be found. The externally applied body force originated from the electrostatic interaction between the nonlinear Poisson-Boltzmann field and the flow-induced electrical field is applied in the equation of motion. The electrostatic potential profile is computed a priori by applying the finite difference scheme, and an analytical solution to the Navier-Stokes equation of motion for slit-like microchannel is obtained via the Green's function. An explicit analytical expression for the induced electrokinetic potential is derived as functions of relevant physicochemical parameters. The effects of the electric double layer, the zeta potential of the solid surface, and the charge condition of the channel wall on the velocity profile as well as the electroviscous behavior are examined. With increases in either electric double layer or zeta potential, the average fluid velocity in the channel of same charge is entirely reduced, whereas the electroviscous effect becomes stronger. We observed an opposite behavior in the channel of opposite charge, where the attractive electrostatic interactions are presented.

• 대한의용생체공학회:의공학회지
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• 제15권3호
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• pp.317-324
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• 1994

본 논문에서는 ISDN(Intergrated Services Digital Network) LAPD(Link Access Procedure on the D-channel)와 LAPB(Link Access Procedunre on the B-channel) 프로토콜 구현과 비 ISDN 기기 용 ISDN 접속장치인 TA(Terminal Adaptor)를 위한 새로운 방법을 제안하였다. 본 논문에서 제안한 방법은 지금까지의 방법과는 달리 실시간 운영체제의 커널부를 타켓보드(target board)에 이식하여 ISDN LAPD와 LAPB 프로토콜을 구현하는 것이다. 구현된 시스템의 특징은 첫째, 각 계층에서 발생한 프로세스들을 병렬적(Multi Tasking)으로 처리하도록 하였고, 둘째, 프로토콜 구현을 위해 필요한 타이머들이 커널부로부터 소프트웨어적으로 지원되도록 하였으며, 셋째, 운영체계의 포트 함수를 응용하여 CCITT에서 권고하는 SAP(service access point)를 구현 하였다. 제안한 방법에 따라 운영체계를 이용하여 ISDN 사용자 망 인터페이스를 위한 LAPD의 계층1(layer1), 계층2(layer2) 및 계층3(Call control) 프로토콜과 LAPB프로토콜을 구현하여 모의 망 종단 장치에 연결시켜 실험을 수행한 결과 계층2(LAPD)에서의 TEI(Terminal Equipment Identifier)할당과, 다중 프레임 전송모드의 설정 후 계층3의 메세지가 전송됨을 확인하였고, 이를 이용하여 계층3에서 호설정이 이루어지고 해제되는 것을 확인 하였다. 그리고 설정된 패스를 통해 LAPB 프로토콜을 이용하여 B 채널로 데이터의 전송이 이뤄짐을 확인하였다. 따라서, 본 논문에서는 PC로부터의 초음파 의료 영상 또는 음성 정보를 ISDN환경에서 보다 효율적으로 전송할 수 있는 ISDN망에서의 전송시스템이 구현됨으로써 향후 ISDN망에 접속하여 사용할 수 있는 가능성을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.215.2-215.2
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• 2015

We fabricated dual active layer (DAL) thin film transistors (TFTs) with indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film layers using solution process. The ITZO and IGZO layer were used as the front and back channel, respectively. In order to investigate the bias stress stability of ITZO SAL (single active layer) and ITZO/IGZO DAL TFT, a gate bias stress of 10 V was applied for 1500 s under the dark condition. The SAL TFT composed of ITZO layer shows a poor positive bias stability of ${\delta}VTH$ of 13.7 V, whereas ${\delta}VTH$ of ITZO/IGZO DAL TFT was very small as 2.6 V. In order to find out the evidence of improved bias stress stability, we calculated the total trap density NT near the channel/gate insulator interface. The calculated NT of DAL and SAL TFT were $4.59{\times}10^{11}$ and $2.03{\times}10^{11}cm^{-2}$, respectively. The reason for improved bias stress stability is due to the reduction of defect sites such as pin-hole and pores in the active layer.

• Journal of Magnetics
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• 제10권2호
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• pp.66-70
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• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.23-27
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.

• Journal of Communications and Networks
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• 제18권3호
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• pp.411-419
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• 2016

This article investigates the problem of distributed channel selection in opportunistic spectrum access networks from a perspective of interference minimization. The traditional physical (PHY)-layer interference model is for information theoretic analysis. When practical multiple access mechanisms are considered, the recently developed binary medium access control (MAC)-layer interference model in the previous work is more useful, in which the experienced interference of a user is defined as the number of competing users. However, the binary model is not accurate in mathematics analysis with poor achievable performance. Therefore, we propose a real-valued one called stochastic MAC-layer interference model, where the utility of a player is defined as a function of the aggregate weight of the stochastic interference of competing neighbors. Then, the distributed channel selection problem in the stochastic MAC-layer interference model is formulated as a weighted stochastic MAC-layer interference minimization game and we proved that the game is an exact potential game which exists one pure strategy Nash equilibrium point at least. By using the proposed stochastic learning-automata based uncoupled algorithm with heterogeneous learning parameter (SLA-H), we can achieve suboptimal convergence averagely and this result can be verified in the simulation. Moreover, the simulated results also prove that the proposed stochastic model can achieve higher throughput performance and faster convergence behavior than the binary one.