• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.73-76
• /
• 2001

We deposited epitaxial $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}$S $r_{x}$Ti $O_3$(x=0.1-0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}$S $r_{0.3}$Ti $O_3$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.00 nm.m.m.m.

• Transactions of Materials Processing
• /
• v.25 no.6
• /
• pp.359-365
• /
• 2016

The rate-controlling mechanisms for time-dependent plastic deformation of eutectoid and hyper-eutectoid pearlitic steels at low $T/T_m$ temperatures were explored. The strain rate - stress data obtained from a series of constant load tensile tests at $0.25{\sim}0.30T/T_m$ were applied to the power law, the lattice friction controlled plasticity, and the obstacle controlled plasticity. Of these models, the obstacle controlled plasticity was found to best-describe the rate-controlling mechanism for time-dependent plastic deformation of two steels at low $T/T_m$ temperatures in terms of the activation energy for overcoming the obstacles against dislocation glide in ferrite. The deformed microstructures revealed the dislocation forests of a high density as the main obstacles. In addition, the obstacle controlled plasticity well-explained the effects of cementite on the $0^{\circ}K$ flow stress of two steels.

• Journal of the Korean institute of surface engineering
• /
• v.54 no.3
• /
• pp.139-143
• /
• 2021

Cr-Al-N coatings were deposited onto WC-Co substrates using a cathodic arc evaporation (CAE) system. CAE technique is recognized to be a very useful process for hard coatings because it has many advantages such as high packing density and good adhesion to metallic substrates. In this study, the influence of deposition temperature as a key process parameter on film growth behavior and mechanical properties of Cr-Al-N coatings were systematically investigated and correlated with microstructural changes. From various analyses, the Cr-Al-N coatings prepared at deposition temperature of 450℃ in the CAE process showed excellent mechanical properties with higher deposition rate. The Cr-Al-N coatings with deposition temperature around 450℃ exhibited the highest hardness of about 35 GPa and elastic modulus of 442 GPa. The resistance to elastic strain to failure (H/E ratio) and the index of plastic deformation (H³/E² ratio) were also good values of 0.079 and 0.221 GPa, respectively, at the deposition temperature of 450℃. Based on the XRD, SEM and TEM analyses, the Cr-Al-N coatings exhibited a dense columnar structure with f.c.c. (Cr,Al)N multi-oriented phases in which crystallites showed irregular shapes (50~100nm in size) with many edge dislocations and lattice mismatches.

• Journal of Korean Vacuum Science & Technology
• /
• v.7 no.1
• /
• pp.8-12
• /
• 2003

The effects of lattice strain on the magnetic and the transport properties of La$_{0.8}$Sr$_{0.2}$MnO$_3$films grown on a LaAlO$_3$ (001) substrate and on a La$_{0.8}$Sr$_{0.2}$MnO$_3$ layer have been studied. It was observed that the metal-insulator and the ferromagnetic transitions turn out to be at higher temperatures for the film deposited on La$_{0.8}$Sr$_{0.2}$MnO$_3$ layer with respect to that on LaAlO$_3$. The dependence of Curie temperature on the bulk and the Jahn-Teller strains has also been determined. determined.

• Journal of Korean Society of Environmental Engineers
• /
• v.38 no.5
• /
• pp.242-248
• /
• 2016

The overall reaction rate of fuel cell is governed by oxygen reduction reaction (ORR) in the cathode due to its slowest reaction compared to the oxidation of hydrogen in the anode. The ORR efficiency can be readily evaluated by examining the adsorption strength of atomic oxygen on the surface of catalysts (i.e., known as a descriptor) and the adsorption energy can be controlled by transforming the surface geometry of catalysts. In the current study, the effect of the surface geometry of catalysts (i.e., strain effect) on the adsorption strength of atomic oxygen on platinum catalysts was analyzed by using density functional theory (DFT). The optimized lattice constant of Pt ($3.977{\AA}$) was increased and decreased by 1% to apply tensile and compressive strain to the Pt surface. Then the oxygen adsorption strengths on the modified Pt surfaces were compared and the electron charge density of the O-adsorbed Pt surfaces was analyzed. As the interatomic distance increased, the oxygen adsorption strength became stronger and the d-band center of the Pt surface atoms was shifted toward the Fermi level, implying that anti-bonding orbitals were shifted to the conduction band from the valence band (i.e., the anti-bonding between O and Pt was less likely formed). Consequently, enhanced ORR efficiency may be expected if the surface Pt-Pt distance can be reduced by approximately 2~4% compared to the pure Pt owing to the moderately controlled oxygen binding strength for improved ORR.

• Journal of the Korean Ceramic Society
• /
• v.33 no.11
• /
• pp.1292-1300
• /
• 1996

In-site X-ray diffraction measurements under electric field up to 20kV/ cm were carried out on PLZT (x/70/30) with x=7.5, 8.0, 8.5, and 10.5 All of PLZT belonged to cubic phases. At x=7.5, 8.0 and 8.5 PLZT behaved as an antiferroelectric under low electric fields up to 4-8 kV/cm. PLZT became ferroelectric at the higher electric fields. The high-temperature measurements on the dielectric constants of PLZT with x=7.5, 8.0 and 8.5 showed that they were similar to relaxor ferroelectrics and underwent a diffuse phase transition from antiferroelectrics to paraelectrics at 50-7$0^{\circ}C$. Their P-E hysteresis curves confirmed that they were antifer-roelectrics. The broad distribution of Curie points suggests that there is a significant disorder of cations and vacances in the crystal structure of those PLZT due to La-substitution. The variation of the lattice strain of PLZT(10.5/70/30) with electic field was very small and did not show any hysteresis confirming that it was paraelectric. The degree of the electric-induced strain variation decreased as La doping increased. In PLZT(7.5/70/30) the intensity of 110 reflection changes sensitively by applying electric field. Some domains with polarization parallel to [110] appeared to be developed in the field-induced ferroelectric phase of the PLZT.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.293-294
• /
• 2011

It is known that semiconductor quantum-dot (QD) heterostructures have superior zero-dimensional quantum confinement, and they have been successfully applied to semiconductor laser diodes (QDLDs) for optical communication and infrared photodetectors (QDIPs) for thermal images [1]. The self-assembled QDs are normally formed at Stranski-Krastanov (S-K) growth mode utilizing the accumulated strain due to lattice-mismatch existing at heterointerfaces between QDs and cap layers. In order to increase the areal density and the number of stacks of QDs, recently, sub-monolayer (SML)-thick QDs (SQDs) with reduced strain were tried by equivalent thicknesses thinner than a wetting layer (WL) existing in conventional QDs (CQDs) by S-K mode. Despite that it is very different from CQDs with a well-defined WL, the SQD structure has been successfully applied to QDIP[2]. In this study, optical characteristics are investigated by using photoluminescence (PL) spectra taken from self-assembled InAs/GaAs QDs whose coverage are changing from submonolayer to a few monolayers. The QD structures were grown by using molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates, and formed at a substrate temperature of 480$^{\circ}C$ followed by covering GaAs cap layer at 590$^{\circ}C$. We prepared six 10-period-stacked QD samples with different InAs coverages and thicknesses of GaAs spacer layers. In the QD coverage below WL thickness (~1.7 ML), the majority of SQDs with no WL coexisted with a small amount of CQDs with a WL, and multi-peak spectra changed to a single peak profile. A transition from SQDs to CQDs was found before and after a WL formation, and the sublevel of SQDs peaking at (1.32${\pm}$0.1) eV was much closer to the GaAs bandedge than that of CQDs (~1.2 eV). These revealed that QDs with no WL could be formed by near-ML coverage in InAs/GaAs system, and single-mode SQDs could be achieved by 1.5 ML just below WL that a strain field was entirely uniform.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.5
• /
• pp.182-187
• /
• 2015

The growth and characterization of micro sized AlGaN array structures selectively grown by metal organic chemical vapor deposition (MOCVD) on GaN stripes are reported. The shape of the AlGaN array structures depends on the size of exposed area for selective growth. The AlGaN array structures grown selectively on relatively large exposed area have regular shapes resembling those of the GaN stripes on the substrate, while samples selectively grown on relatively small exposed area have irregular shapes. The phonon frequency of the AlGaN array structures increases with increasing Al composition in the AlGaN structure. However, at relatively high Al composition (x = 0.28 in this research), the phonon frequency decreases slightly from the expected value not only because of large tensile strain associated with large differences between the lattice constants of the AlGaN structure and underlying GaN stripes but also changes of crystal facet direction during the selective growth.

• Journal of the Microelectronics and Packaging Society
• /
• v.9 no.3
• /
• pp.49-56
• /
• 2002

In this study, the InGaP epilayers were grown on the exact and the $2^{\circ}$, $6^{\circ}$, $10^{\circ}$ of cut GaAs substrates by metal-organic vapor phase epitaxy, and the effects of interfacial elastic strains determined by the substrate offcut angle upon the resulting dislocation density of epilayer were investigated for the first time. The elastic strains were obtained from lattice mismatch and lattice misfit by TXRD, and the dislocation densities from epilayer x-ray FWHM. For the offcut angle range used in this study, the elastic strain was maximum and x-ray FWHM minimum at offcut angle $6^{\circ}$. From 11K PL measurements, PL wavelength was found to decrease with an increase of offcut angle. PL intensity was maximum at offcut angle $6^{\circ}$. TEM results showed that the electron diffraction pattern was of typical zincblende structure, and that the dislocation density was minimum for substrate offcut angle $6^{\circ}$. The results obtained in this study, along with the device fabrication process and beam characteristics, clearly demonstrated that the optimum substrate offcut angle for the InGaP/GaAs heterostructures is $6^{\circ}$.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.22 no.3
• /
• pp.13-19
• /
• 2021

This study examined the effects of stacking faults on the thermoelectric properties for n-type SiC semiconductors. Porous SiC semiconductors with 30~42 % porosity were fabricated by the heat treatment of pressed ��-SiC powder compacts at 1600~2100 ℃ for 20~120 min in an N2 atmosphere. XRD was performed to examine the stacking faults, lattice strain, and precise lattice parameters of the specimens. The porosity and surface area were analyzed, and SEM, TEM, and HRTEM were carried out to examine the microstructure. The electrical conductivity and the Seebeck coefficient were measured at 550~900 ℃ in an Ar atmosphere. The electrical conductivity increased with increasing heat treatment temperature and time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The Seebeck coefficients were negative due to nitrogen behaving as a donor, and their absolute values also increased with increasing heat treatment temperature and time. This might be due to a decrease in stacking fault density, i.e., a decrease in stacking fault density accompanied by grain growth and crystallite growth must have increased the phonon mean free path, enhancing the phonon-drag effect, leading to a larger Seebeck coefficient.