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http://dx.doi.org/10.6111/JKCGCT.2015.25.5.182

Selective area growth of micro-sized AlGaN array structures on GaN stripes  

Lee, Seunghyun (Department of Electronic Materials Engineering, Korea Maritime and Ocean University)
Ahn, Hyungsoo (Department of Electronic Materials Engineering, Korea Maritime and Ocean University)
Yang, Min (Department of Electronic Materials Engineering, Korea Maritime and Ocean University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.25, no.5, 2015 , pp. 182-187 More about this Journal
Abstract
The growth and characterization of micro sized AlGaN array structures selectively grown by metal organic chemical vapor deposition (MOCVD) on GaN stripes are reported. The shape of the AlGaN array structures depends on the size of exposed area for selective growth. The AlGaN array structures grown selectively on relatively large exposed area have regular shapes resembling those of the GaN stripes on the substrate, while samples selectively grown on relatively small exposed area have irregular shapes. The phonon frequency of the AlGaN array structures increases with increasing Al composition in the AlGaN structure. However, at relatively high Al composition (x = 0.28 in this research), the phonon frequency decreases slightly from the expected value not only because of large tensile strain associated with large differences between the lattice constants of the AlGaN structure and underlying GaN stripes but also changes of crystal facet direction during the selective growth.
Keywords
GaN; AlGaN; GaN stripe; Selective growth; AlGaN structure; MOCVD; Strain; Raman spectroscopy;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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