• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}Sr_{0.4}TiO_{3}(BST)$ films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}Sr_{x}TiO_{3}$ (x = 0.1 - 0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}Sr_{0.3}TiO_{3}$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.

• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.460-464
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• 2003

The barium strontium titannate ((Ba,Sr)TiO$_3$:BST) thin films were etched in an inductively coupled plasma (ICP) as a function of CF$_4$/Ar gas mixing ratio. Under CF$_4$(20%)/Ar(80%), the maximum etch rate of the BST films was 400 $\AA$/min. Etching products were redeposited on the surface of BST and then the nature of crystallinity were varied. Therefore, we investigated the etched surface of BST by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The plasma damages were evaluated in terms of leakage current density by Agilent 4145C and dielectric constant by HP 4192 impedance analyzer. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. After annealing at 600 $^{\circ}C$ for 10 min in $O_2$ ambient, the leakage current density, roughness and nonvolatile etch byproducts reduced. From this results, the plasma induced damages were recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• Journal of Magnetics
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• 제12권4호
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• pp.137-140
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• 2007

We have studied the temperature dependent magnetic properties and crystalline phase transitionn in small amount Fe doped nickel chromite. The Crystalline structure of $NiCr_{1.7}Fe_{0.3}O_4$ is spinel cubic (Fd-3m) structure with a lattice constant $a_0=8.317\AA$ at room temperature. The magnetic $N\acute{e}el$ temperature $(T_N)$ of the Fe doped nickel chromite sample is determined to be 250 K. The $M\ddot{o}ssbauer$ spectra exhibit that there are two magnetic phases with the two different sites for the $Cr^{3+}$ ions. The spectrum at 4.2 K is fitted to two magnetic components of the magnetic hyperfine fields $H_{hf}=496$ and 485 kOe. From the spectrum at 295 K, the electric quadrupole splittings are observed with large values of 0.49 and 0.50 mm/s, respectively. The values of the isomer shifts at all temperature ranges show that the Fe ions are ferric states. We are suggested that the dynamic Jahn-Teller distortion and anisotropic magnetic relaxation effects due to the crystalline phase transition.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2013년도 임시총회 및 하계학술연구발표회
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• pp.19-20
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• 2013

Thermoelectic properties of the typical thermoelectric host materials, the tellurides and selenides, are known to be noticeably changed by their volume change due to the strain [1]. In the bismuth telluride ($Bi_2Te_3$) crystal, a substitution of rare-earth element by replacing one of the Bi atoms may cause the change of the lattice parameters while remaining the rhombohedral structure of the host material. Using the first-principles approach by the precise full potential linearized augmented plane wave (FLAPW) method [2], we investigated the Ce substitution effect on the thermoelectric transport coefficients for the bismuth telluride, employing Boltzmann's equation in a constant relaxation-time approach fed with the FLAPW wave-functions within the rigid band approximation. Depending on the real process of re-arrangement of atoms in the cell to reach the equilibrium state, $CeBiTe_3$ was found to manifest a metal or a narrow bandgap semiconductor. This feature along with the strong correlation effect originated by the 4f states of Ce affect significantly on the thermoelectric properties. We showed that the position of the strongly localized f-states in energy scale (Fig. 1, f-states are shaded) was found to alter critically the transport properties in this material suggesting an opportunity to improve the thermoelectric efficiency by tuning the external strain which may changing the location of the f-sates.

• 대한화학회지
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• 제38권9호
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• pp.628-631
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• 1994

펄스 핵자기공명 기법을 이용하여 상자성 물질인 $CuF_2$를 조사한 결과 상온에서 $^{19}F$ 위치의 차이에 의한 확연히 구별되는 두 개의 공명선을 얻었다. 한 선은 진동수 이동이 거의 없었지만 다른 한 선은 진동수 이동이 심했다. 두 경우 모두 스핀-격자 완화시간$(T_1)$이 짧지만 진동수 이동이 심한 경우에 $T_1$ 이 더 짧았다. 이는 두 경우에 대한 주위의 전자 환경이 다르기 때문으로 해석된다.

• 한국자기학회지
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• 제5권3호
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• pp.171-174
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• 1995

성자성 $CuF_{2}$의 $^{19}F$에 대한 펄스 핵자기공명을 수행하였다. 분말시료에 대하여 상온과 질소온도에서 측정된 선모양은 서로 다른 자리의 $^{19}F$에 대응하는 잘 분리된 두개의 공명선으로 구성되었다. 두 공명선의 서로 다른 주파수 이동량을 구리원자로부터 불소 원자로 부분적으로 이동된 전자에 의한 기여로 해석할 수 있었다. 두 공명선은 모두 매우 짧은 스핀-격자 완화시간($T_{1}$)을 나타내었으며 더 큰 주파수 이동을 나타내는 $^{19}F$ 공명선이 더 짧은 스핀-격자 완화시간을 보였다. 이를 두 $^{19}F$ 자리 주위의 서로 다른 전자 환경이 반영되어 나타난 것으로 해석하였다.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권3호
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• pp.97-101
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• 2005

ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}$S $r_{x}$Ti $O_3$(x=0.1-0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}$S $r_{0.3}$Ti $O_3$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.00 nm.m.m.m.

• 한국자기공명학회논문지
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• 제23권1호
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• pp.12-19
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• 2019

A former study has shown that the spin-lattice relaxation time ($T_1$) in cancerous prostate tissue had enhanced contrast at an ultra-low magnetic field, $132{\mu}T$. To study the field dependence and the origin of the contrast we measured $T_1$ in pairs of ex-vivo prostate tissues at the Earth's magnetic field. A portable and coil-based nuclear magnetic resonance (NMR) system was adopted for $T_1$ measurements at $40{\mu}T$. The $T_1$ contrast, ${\delta}=1-T_1$ (more cancer)/$T_1$(less cancer), was calculated from each pair. Additionally, we performed pathological examinations such as Gleason's score, cell proliferation index, and micro-vessel density (MVD), to quantify correlations between the pathological parameters and $T_1$ of the cancerous prostate tissues.

• Investigative Magnetic Resonance Imaging
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• 제2권1호
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• pp.73-82
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• 1998

목적 : 간특정 MR 조영제를 이요하여 간세포의 세포막을 통한 물분자의 교환 및 세포막 투과율을 정확히 측정 할 수 있는 MR 기법을 개발하고자 하였다. 대상 및 방법 : 쥐의 간세포를 분리하여 낸 후 NMR 측정을 시도하엿다. 모든 실험은 0.02MHz부터 60 MHz까지 양성자의 Larmor 주파수를 변화시킬 수 있는 IBM형 field cycling relaxometer를 사용하여 시행하였으며 spin-echo 펄스열을 사용하여 T1 자기이완시간을 측정하였다. 전오도의 간특정 조영제인 Gd-EOB-DTPA를 함유하고 있는 간세포 샘플로부터 획득한 T1 데이터를 연속분포 분석법을 사용하여 분석하였으며 이때 이론적 모델로는 Two compartmental exchange 모델을 이용하였다. 결과 : 간세포내의 물분자의 평균 거주시간은 약 250 msec이며 간세포막의 투과율에 대한 최저치는 $(1.3{\pm}0.1){\;}{\times}{\;}10^{-3}cm/sec$ 이었다. 자기이완시간의 연속적인 분포도를 구할 수 있는 CONTIN 분석기법을 적용한 결과 확산적 물분자 교환이 일어남을 밝혔고 이러한 확산적 교환의 정도가 간세포의 경우 세포내 공간에서는 작지 않다는 사실을 규명 할 수 있었다. 결론 : 연속분포 분석기법을 적용하는 경우 Gd-EOB-DTPA는 간세포에서의 물분자의 교환정도 및 세포막의 물분자에 대한 투과율을 측정하는데 매우 유용한 방법임을 확인하였고 간세포에서의 물분자의 교환속도는 적혈구에서의 물분자 교환 속도에 비해 매우 느리다는 사실을 확인하였다. 따라서 조직 특정 조영제는 해당 조직 혹은 세포의 세포막 투과율과 같은 생리학적 정보를 알아낼 수 있는 기능적 조영제로서의 유용성을 입증할 수 있었다.