• 한국세라믹학회지
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• 제40권8호
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• pp.746-750
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• 2003

Czochralski법을 이용하여 Er$_2$O$_3$가 첨가된 near stoichiometric조성의 LiNbO$_3$ 단결정을 Z-축의 방향으로 직경 15~20mm, 길이 25-30 mm의 크기로 성장시켰다. X-Ray Diffractometer (XRD)을 이용하여 격자상수를 조사하였고, Fourier Transform-Infrared Spectrophotometer (FT-IR)을 통하여 흡수밴드를 관찰하였다. 또한 Electron Probe Micro Analysis (EPMA)를 이용하여 결정 내에 Er의 분포를 확인하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.167-185
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• 1999

In the present paper, KLN crystals have been grown along <001>, <100> and <110> directions by the top seeded solution growth (TSSG) method from Li-richer melts with different compositions. The morphologies of KLN crystals grown along different directions have been studied, and the well-developed facets have been unambiguously indexed using X-ray goniometer and stereographic projection analysis. The growth mechanism and defects such as cracks and inclusions were discussed on the basis of observations of facets on the crystal-melt interfaces. The crystal compositions were determined by chemical analysis method. The structure and lattice constants of KLN crystals were determined and calculated on the basis of XRD data by using TREOR90 and PIRUM programs. The Curie temperature and optical absorption were determined by dielectric constant peak and spectrum measurements, respectively. The blue SHG characteristics of a KLN sample were also investigated using a pulsed dye laser. PACS: 42.70.M;81.10;81.10A;42.65.K.

• The Korean Journal of Ceramics
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• 제5권4호
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• pp.341-347
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• 1999

An ambiguity on the correct room temperature structure of $Bi_5Ti_3FeO_{15}$ was resolved using a combined Rietveld refinement of neutron and X-ray diffraction. The structure of this compound has been reported to have a space group of F2mm (adopting 2-fold rotation symmetry along the c-axis) or A21am. However, our diffraction, study reveals that some reflections would violate F-centering and confirm that the belong to $A2_1$am. Out refinement with the space group of $A2_1$am converged at $R_p=6.85%, R_wp=9.23%$ and $\chi^2$=1.66 for an isotropic temperature model with 85 variables. The lattice constants are a=5.4677(1) $\AA$, b=5.4396(1) $\AA$, and c=41.2475(8)$\AA$. In structure, Ti/Fe atoms at the oxygen octahedral sites of the perovskite unit are completely disordered, resulting in that these atoms are transparent in neutron diffraction. The octahedra of the perovskite unit are relatively displaced along the a-axis against the Bi atoms, which contribute as a major component to the spontaneous polarization of $Bi_5Ti_3FeO_{15}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.768-771
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• 2004

Pb0.5,Sr0.5TiO3(PST) thin films were deposited on Si with MgO (100) buffer layer by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. For the MgO/Si buffer layer, the PST thin films exhibited highly (100) orientation. The MgO buffer layer affects the stress state of the (100)-oriented PST thin films. The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the MgO/Si substrates measured at 10 kHz were 822, 0.025, and 80.1%, respectively.

• 한국결정성장학회지
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• 제9권4호
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• pp.396-401
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• 1999

In the present paper, potassium lithium niobate(KLN) crystals have been grown along <001>, <100> and <110> directions by the top seeded solution growth (TSSG) method from Li-richer melts with different compositions. The morphologies of KLN crystals grown along different directions have been studied, and the well-developed facets have been unambiguously indexed using X-ray goniometer and stereographic projection analysis. The growth mechanism and defects such as cracks and inclusions were discussed on the basis of observations of facets on the crystal-solution interfaces. The crystal compositions were determined by a chemical analysis method. The structure and lattice constants of KLN crystals were determined and calculated on the basis of XRD data by using TREOR90 and PIRUM programs. The Curie temperature and optical absorption were determined by dielectric constant peak and spectrum measurements. respectively. The blue second harmonic generation (SHG) characteristics of KLN sample were also investigated using a pulsed dye laser.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.87-89
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• 2005

$Bi_{3.25}Y_{0.75}Ti_{3}O_{12}$[BYT] ferroelectric thin films were deposited by RF-Sputtering method on the $Pt/Ti/SiO_2/Si$. We investigated the effects of processing condition (especially post-annealing) on the structural and ferroelectric properties of the BYT thin films. Increasing the annealing temperature, the peak intensity of (117) increased and c-axis orientation decreased. The BYT thin films crystallized well at $600^{\circ}C$ for 30min. No secondary phases observed in the XRD pattern. At annealing temperature of $700^{\circ}C$, the thin films had no cracks and the grain was uniform. The calculated lattice constants of BYT thin films were a=0.539nm, b=0.536nm, c=3.288nm. The remnant polarization of the $Bi_{3.25}Y_{0.75}Ti_{3}O_{12}$ capacitor reached $1.8uC/cm^2$ at an applied field about 400kV/cm. The BYT thin films can be used as capacitors in Ferroelectric Random Access Memory device.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.242-248
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• 2008

The structural, optical and electrical properties of ZnO films doped with 1.5 at% of 3A materials(B, Al, Ga, In) were studied by sol-gel process. The films were found to be c-axis (002) oriented hexagonal structure on glass substrate, when post heated at 500 $^{\circ}C$. The surface of the films showed a uniform and nano size microstructure and the crystalline size of doped films decreased. The lattice constants of ZnO:B/Al/Ga increased than that of ZnO, while ZnO:In decreased. All the films were highly transparent(above 90 %) in the visible region. The energy gaps of ZnO:B/Al/Ga were increased a little, but that of ZnO:In was not changed. The resistivities of ZnO:Al/Ga/In were less than 0.1 $\Omega$cm. All the films showed a semiconductor properties in the light or temperature, however ZnO:In was less sensitive to it. A figure of merit of ZnO:In had the highest value of 0.025 $\Omega^{-1}$ in all samples.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.366.1-366.1
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• 2014

The rare-earth oxides M2O3 (M=La, Pr, Gd) are good insulators due to their large band gap (3.9eV for Pr2O3, 5.6eV for Gd2O3), they have high dielectric constants (Gd2O3 K=16, La2O3 K=27, Pr2O3 K=26-30) and, compared to ZrO2 and HfO2, they have higher thermodynamic stability on silicon making them very attractive materials for high-K dielectric applications. Another attractive feature of some rare-earth oxides is their relatively close lattice match to that of silicon, offering the possibility of epitaxial growth and eliminating problems related to grain boundaries in polycrystalline films. Metal-organic chemical vapor deposition (MOCVD) has been preferred to PVD methods because of the possibility of large area deposition, good composition control and excellent conformal step coverage. Herein we report on the synthesis of rare-earth oxide complexes with designed alkoxide and aminoalkoxide ligand. These novel complexes have been characterized by means of FT-IR, elemental analysis, and thermogravimetric analysis (TGA).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.185-188
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• 1996

The doped n-type $Al_{x}Ga_{1-x}Sb$ crystals were grown by the vertical Bridgman method at composition ratio x=0, x=0.1, x=02 respectively. The lattice constants of the $Al_{x}Ga_{1-x}Sb$ crystals were 6.096${\AA}$, 6.097${\AA}$, 6.106${\AA}$ at composition ratio respectively. The carrier concentration, the resistivity, and the carrier mobility measured by the Van der Pauw method at x-0 were n≡1 x $10^{17}$$cm^{-3}$, $\rho$≡0.15 ${\Omega}$-cm, ${\mu}$$_{n}$≡500 $\textrm{cm}^2$$V^{-1}$$sec^{-1}$ at 300K. The carrier concentration, the resistivity, and the carrier mobility measured by the Van der Pauw method at x=0.1 were n≡2.96 x $10^{15}$$cm^{-3}$, $\rho$≡103 $\textrm{cm}^2$$V^{-1}$$sec^{-1}$ at 300K.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.435-435
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• 2011

The electronic structure and various physical properties of CeO2, Ce2O3, PrO2, and Pr2O3 have been studied from the framework of Ab-initio by the all-electron projector-augmented-wave (PAW) method, as implemented VASP (Vienna Ab-initio Simulation Package). The generalized gradient approximation (GGA) with effective U (Ueff) has been used to explain the strong on-site Coulomb repulsion among the localized Ce 4f electrons. The dependence of selected observables of these materials on the Ueff parameter has been scrutinized. The studied properties contain lattice constants, density of states, and reaction energies of CeO2, Ce2O3, PrO2, and Pr2O3. For CeO2 and PrO2, the GGA(PBE)+U results are in good agreement with experimental data whereas for the computational calculationally more demanding Ce2O3 and Pr2O3 both approaches give comparable accuracy. This results represent that by choosing an appropriate Ueff it is possible to reliably describe structural and electronic properties of CeO2, Ce2O3, PrO2, and Pr2O3, which enables modeling of oxygen reduction reaction processes involving ceria-based materials.