• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.280-280
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• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.354-354
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• 2012

In this study, we report the vertically aligned ZnO nanowires by using different type of Ga-doped ZnO (GZO) thin films as seed layers to investigate how the underlying GZO film micro structure affects the distribution of ZnO nanowires. Arrays of highly ordered ZnO nanowires have been synthesized on GZO thin film seed layer prepared on p-Si substrates ($7-13{\Omega}cm$) with utilize of a pulsed laser deposition (PLD). With the vapor-liquid-solid (VLS) growth process, the ZnO nanowire synthesis carries out no metal catalyst and is cost-effective; furthermore, The GZO seed layer facilitates the uniform growth of well-aligned ZnO nanowires. The influence of the growth temperature and various thickness of GZO seed layer have been analyzed. Crystallinity of grown seed layer was studied by X-Ray diffraction (XRD); diameter and morphology of ZnO nanowires on seed layer were investigated by field emission scanning electron microscopy (FE-SEM). Our results suggest that the GZO seed layer with high c-axis orientation, good crystallinity, and less lattice mismatch is key parameters to optimize the growth of well-aligned ZnO nanowire arrays.

• Journal of the Korean Chemical Society
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• v.37 no.4
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• pp.390-395
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• 1993

The x values and electrical conductivities of the nonstoichiometric compounds$ CeO_{2-x} have been measured in a temperature range from 600 to 1200$^{\circ}C$ under oxygen partial pressure of $2{\times}10^{-1}{\sim}1{\times}10^{-4}$ atm. The enthalpy of the defect formation shows an endothermic process with the oxygen partial pressure dependence (1/n value) of -1/3.18 ∼ -1/3.69. The activation energy and 1/n value for the electrical conductivity are estimated as 1.75 eV and -1/4, respectively. According to the x values, the $\sigma$ values, and the thermodynamic data, the defect structure of the ceria seems to be the formation of singly charged negative oxygen vacancies. The n-type semiconducting behaviors could be explained by the presence of excess metals in the lattice as the conduction electron donor.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.143-148
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• 2016

$CaAl_2O_4:RE^{3+}$(RE = Tb or Dy) phosphor powders were synthesized with different contents of activator ions $Tb^{3+}$ and $Dy^{3+}$ by using the solid-state reaction method. The effects of the content of activator ions on the crystal structure, morphology, and emission and excitation properties of the resulting phosphor particles were investigated. XRD patterns showed that all the synthesized phosphors had a monoclinic system with a main (220) diffraction peak, irrespective of the content and type of $Tb^{3+}$ and $Dy^{3+}$ ions. For the $Tb^{3+}$-doped $CaAl_2O_4$ phosphor powders, the excitation spectra consisted of one broad band centered at 271 nm in the range of 220-320 nm and several weak peaks; the main emission band showed a strong green band at 552 nm that originated from the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ ions. For the $Dy^{3+}$-doped $CaAl_2O_4$ phosphor, the emission spectra under ultraviolet excitation at 298 nm exhibited one strong yellow band centered at 581 nm and two weak bands at 488 and 672 nm. Concentration-dependent quenching was observed at 0.05 mol of $Tb^{3+}$ and $Dy^{3+}$ contents in the $CaAl_2O_4$ host lattice.

• Journal of the Korea Society of Computer and Information
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• v.24 no.10
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• pp.205-213
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• 2019

Network robustness is one of the most important characteristics needed as the network. Over the military tactical communication network, robustness is a key function for maintaining attack phase constantly. Tactical Information Communication Network, called TICN, has mixed characteristics of lattice- and tree-type network topology, which looks somewhat weak in the viewpoint of network robustness. In this paper, we search articulation points and bridges in a current Tactical Information Communication Network using graph theory. To improve the weak points empirically searched, we try to add links to create the concrete network and then observe the change of network-based verification values through diminishing nodes. With these themes, we evaluate the generated networks through SNA techniques. Experimental results show that the generated networks' robustness is improved compared with current network structure.

• Journal of the Korean Chemical Society
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• v.40 no.5
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• pp.295-301
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• 1996

A series of solid solutions of the $CaGa_1-xFexO_3-y$ system with the compositions of x=0.25, 0.50, 0.75, and 1.00 has been prepared at $1150^{\circ}C$ under an atmospheric air pressure. The structure, nonstoichiometric chemical formula, and the distribution of cations for the solid solutions are determined by X-ray diffraction analysis, Mohr salt titration, Mossbauer spectroscopic analysis. Their physical properties are discussed with electrical conductivity and magnetic measurements. The crystal system of all the compositions is a brownmillerite orthorhombic system from the X-ray diffraction analysis and the reduced lattice volume increases linearly with x value except that of the composition of x=0.25. All the solid solutions do not contain $Fe^{4+}$ ion and the mole number of oxygen vacancies or y value is 0.50 from Mohr salt analysis. The oxidation state of Fe ion, the coordination state, the structure change in the Brownmillerite-type structure, and the distribution of $Ga^{3+}$ and $Fe^{3+}$ ions are discussed with Mossbauer spectroscopic analysis. The electrical conductivity increases and activation energy decreases, as x value increases. The traditional semiconducting property of this system is described in terms of band theory. The compositions of x=0.50∼1.00 show a thermal magnetic hysteresis in the magnetic measurement with the cooling conditions, which is discussed in terms of the space group and Dzyaloshinsky-Moriya interaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Applied Microscopy
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• v.25 no.4
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• pp.124-131
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• 1995

High resolution transmission electron microscopic observations on the $Hg_{1-x}\;Tl_{x}\;Ba_{2}(Ca_{0.86}\;Sr_{0.14})_{2}\;Cu_{3}\;O_{8+\delta}$(x=0.00, 0.25, 0.50, 0.75) were carried out using side-entry type TEM working at 300 kV. The TEM samples are prepared by powder method. The pellets are crushed in agatar motar and suspended in $CCl_4$, solution and scooped in holely carbon microgrid. The 1223 structures are observed in all samples with [010] zone axis. Except x=0.25 sample, the lattice parameter a and c tend to decrease as the thallium contents are increased ranging from 0.3936 nm to 0.3713 nm for a, and from 1.6131 nm to 1.5138 nm for c parameter. Those of x=0.25 sample are reduced too much, 0.3785 nm for a, 1.5375 nm for c. The sample with x=0.25 shows the intergrowth of 1223 and 1234 structure with the ratio of 19 to 1. As the thallium content increases, the structures become more stable without having any defect. The samples are damaged by electron beam irradiation during the observation, however the structure can endure longer as the thallium contents are increased.

• Journal of the Mineralogical Society of Korea
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• v.14 no.2
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• pp.99-110
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• 2001

A gem-quality yttria-stabilized zirconium oxide crystals were synthesized by the skull-melting method, using the RF electrical apparatus. Principal raw materials used were $ZrO_2$and 25 wt.% $Y_2O_3$as stabilizer and 0.03~0.05 wt.% $Nd_2O_3$decolorizing agent were added to it. The single crystals were approximately 20$\times$63 mm in size with chemical composition $Zr_{0.73}$ $Y_{0.27}$ $O_{1.87}$ . The crystals are isotropic with no appreciable anisotropism under a polarizing microscope. Their refractive indices are in the range of 2.15~2.18, specific gravity 5.85, Mohs' hardness 8~8.5, and reflectivity 13.47%. The zirconia crystals were confirmed to have cubic structure with Face-centered lattice(Z=4), space group Fm3m ($CaF_2$-type structure) and unit cell parameters are a=5.157 $\AA$. The optimal growing conditions for yttria-stabilized zirconia are 50 kW, 2.94 MHz in power and to use a crucible with 105 mm $\times$ 135 mm in size. When the lowering speed of the crucible was set 16mm/hr gave the best yield, 42%. Since the refractive index(2.15~2.18) of cubic zirconia is smaller than that of diamond, the angle between crown and pavilion should be fashioned to make it smaller than $40.5^{\circ}$ to show the maximum brilliancy and fire.