• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.2017-2022
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• 2012

Three isostructural lanthanide coordination polymers, $[Ln(L)_3(H_2O)_2](H_2O)_3$ {Ln = Eu (1), Tb (2), Gd (3); L = $trans$-3-(3-pyridyl)acrylate, (3-py)-CH=CH-COO}, were prepared from HL, lanthanide nitrate, and NaOH in $H_2O$ by microwave heating. In all coordination polymers, the metal is bonded to eight oxygen atoms, and all pyridyl nitrogen atoms do not coordinate to the metals. All polymers have a 1-D loop-connected chain structure. The hydrogen atoms in the aqua ligands and lattice water molecules all participate in the hydrogen bonds of the O-$H{\cdots}O$ or O-$H{\cdots}N$ type. The hydrogen bonds connect the 1-D chains to create a 2-D network. Polymer 1 exhibited red luminescence in the solid state at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.747-753
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• 2004

In this paper, nanocrystalline indium tin oxide (ITO) particles were fabricated by using synthesis without harmful elements. The synthetic method is to eliminate the chloridic and nitridic elements which are included in the current wet type synthetic method. Therefore, it is possible to lower synthetic temperature below 600 $^{\circ}C$ to eliminate the harmful elements. Accordingly, fine particle can be achieved by applying the process. Particle size, surface area, crystal structure, and composition ratio of the synthesized nanocrystalline ITO particle by using the method were analyzed with high resolution transmission electron microscopy (HRTEM), BET surface area analyzer, X-ray diffraction (XRD), and energy dispersion spectroscopy (EDS). As a result, its particle size is less than 10 nm, and the surface area exceeds 100 m$^2$/g. The XRD analysis indicates that the cystal structure of the powder is cubic one with orientation of <222>, <400>, <440>. Also, the analysis of the composition demonstrates that the around 8 wt% tin is uniformly included in In$_2$O$_3$ lattice of the nanoparticle.

• Bulletin of the Korean Chemical Society
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• v.16 no.7
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• pp.600-603
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• 1995

A series of samples in the Sm1-xSrxCoO3-y(x=0.00, 0.25, 0.50, 0.75 and 1.00) system has been prepared at 1200 ℃ under ambient atmosphere. The X-ray diffraction patterns of the samples with x=0.00 and 0.25 are indexed with orthorhombic symmetry like GdFeO3 and x=0.50 appears to be perfectly cubic. In the tetragonal system (x=0.75), the structure is similar to that of SrCoO2.80. The composition of x=1.00, SrCoO2.52, shows the brownmillerite-type structure. The reduced lattice volume is increased with x value in this system. The chemical analysis shows the τ value (the amount of the Co4+ ions in the system) is maximized at the composition of x=0.50. Nonstoichiometric chemical formulas are determined by the x, τ and y values. The electrical conductivity has been measured in the temperature range of 78 to 1000 K. The activation energy is minimum for those of x=0.25 and x=0.50 with metallic behavior. First-order semiconductor-to-metal transition of SmCoO3 is not observed. Instead, a broad, high-order semiconductor-to-metal transition is observed. In general, the effective magnetic moment is increased with increasing τ values at low temperature. At high temperature, the magnetic moment is maximum for that of x=0.00. The 3d-electrons are collective and give ferromagnetism in x=0.50.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.5
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• pp.1-4
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• 1982

Single crystals of InSe were obtained by the Bridgman method. The crystal structure was hombohedral(R3m) with lattice paramete. a=4.02A, c=24.96A. At 300$^{\circ}$K the electrical conductivity was about ~10-2($\Omega$.cm)-1, reslpectively. The electrical conductivity type was n- type. The donor level located at 0.072eV below the conduction band. The Photosensitivity was observed in range from 840nm to 1120nm. The energy gap of InSe single crystal measured from the photoconductivity and the optical transmittance spectrum was 1.20eV, 1.21eV, respectively.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.405-410
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• 1996

The partial substitution of LiTaO3 with Al2O3 caused the variation of dielectric properties and a lower melting temperature yielding an easier growth of single crystal. The lattice constants and Raman band broadening were measured for the LiTaO3 solid solution in which the cations of Li+ and Ta5+ were partially substituted by Al3+ cation. The LiTaO3 type limit phases were obtained. ; Li1.15Al0.45Ta0.7O3 for cationic excess Li1.15Al0.45Ta0.7O3 for stoichiometry Li0.85Al0.05TaO3 for cationic deficit. The second phase was formed beyond the solubility limit. The limit phase (Li0.85Al0.05TaO3) in the region of cationic deficit showed the lowest Cuire temperature of 61$0^{\circ}C$ and melting point of 152$0^{\circ}C$ compared to the solid solutions in other regions (TMp=1$650^{\circ}C$, Tc=69$0^{\circ}C$ for LiTaO3)

• Nuclear Engineering and Technology
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• v.30 no.2
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• pp.128-139
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• 1998

The effect of UO$_2$ powder property and oxygen potential on characteristics of sintered UO$_2$-Gd$_2$O$_3$ fuel pellets has been investigated. Two types of powder, mixture of AUC-UO$_2$ and Gd$_2$O$_3$powders (type I) and mixture of ADU-UO$_2$ and Gd$_2$O$_3$powders (type II), have been prepared, pressed, and sintered at 168$0^{\circ}C$ for 4 hours. Four sintering atmospheres with different mixing ratios of $CO_2$to H$_2$ gas ranging from 0 to 0.3 have been used. UO$_2$-Gd$_2$O$_3$ fuel has lower sintered density than UO$_2$ fuel, and the density drop is larger for powder type I than for powder type II. As the oxygen potential increases, the sintered density of UO$_2$-2wt% Gd$_2$O$_3$pellets increases but that of UO$_2$-10wt% Gd$_2$O$_3$ pellets decreases. It is found that pores are newly formed in UO$_2$-10wt% Gd$_2$O$_3$ pellets in accordance with the decrease in density. The grain size of UO$_2$-Gd$_2$O$_3$ fuel increases and a short range G4 distribution becomes homogeneous as the oxygen potential increases. A long range ed distribution and grain structure are inhomogeneous for powder type II. The lattice parameter of (U,Gd)O$_2$solid solution decreases linearly with Gd$_2$O$_3$ content. The dependence of UO$_2$-Gd$_2$O$_3$fuel characteristics on powder type and sintering atmosphere have been discussed.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.379-380
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• 2005

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2\Theta$) of $27.7^{\circ}$ was well made by SEL method at annealing temperature of $250^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when $CuInS_2$ composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}m$ respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

• Bulletin of the Korean Chemical Society
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• v.15 no.9
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• pp.713-718
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• 1994

Manganese-incorporated neodymium oxide systems with a variety of Mn mol% were prepared to investigate the effect of doping on the electrical properties of neodymium oxide. XRD, XPS, SEM, DSC, and TG techniques were used to analyze the specimens. The systems containing 2, 5, 8, and 10 mol% Mn were found to be solid solutions by X-ray diffraction analysis and the lattice parameters were obtained for the single-phase hexagonal structure by the Nelson-Riley method. The lattice parameters, a and c, decreased with increasing Mn mol%. Scanning electron photomicrographs of the specimens showed that the grain size decreased with increasing Mn mol%. The curves of log conductivity plotted as a function of 1/T in the temperature range from 500 to 1000$^{\circ}C$ at $PO_2$'s of $10^{-5}$ to $10^{-1}$ atm for the specimens were divided into high-and low-temperature regions with inflection points near 820-890$^{\circ}C$. The activation energies obtained from the slopes were 0.53-0.87 eV for low-temperature region and 1.40-1.91 eV for high-temperature region. The electrical conductivities increased with increasing Mn mol% and $PO_2$, indicating that all the specimens were p-type semiconductors. At $PO_2$'s below $10^{-3}$ atm, the electrical conductivity was affected by the chemisorption of oxygen molecule in the temperature range of 660 to 850$^{\circ}C$. It is suggested that electron holes generated by oxygen incorporation into the oxide are charge carriers for the electrical conduction in the high-temperature region and the system includes ionic conduction owing to the diffusion of oxygen atoms in the low-temperature region.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.