• 한국세라믹학회지
• /
• 제15권2호
• /
• pp.59-65
• /
• 1978

Some compounds with tetrahedral framework structures are synthetized and the general methods of synthesis are discussed. There exist tridymite-, cristobalite-, Icmm-, Immm-, beryllonite-, feldspar-, and paracelsian-structure type in the gropu of compounds. Their lattice constants and space groups are summarized and given in a table.

• 전기학회논문지P
• /
• 제58권4호
• /
• pp.451-454
• /
• 2009

The $\beta-In_2Te_3$ single crystal was grown by vertical Bridgman method. The $\beta-In_2Te_3$ single crystal had a face centered cubic(fcc) structure. The lattice constants were found to be $a\;=\;0.617\;{\AA}$. The direct optical energy gap ($E_g$) was found to be 1.11 ev at 300 K. Raman spectra peak of $\beta-In_2Te_3$ single crystal showed the low $E_{LO}$ mode at $105\;cm^{-1}$. The electrical conduction type was measured by the thermal method and was p-type. The electrical conductivity was found to be $1.8\;{\times}\;10^{-2}\;{\Omega}^{-1}cm^{-1}$ at 300 K. The activation energy was found to be 0.51 eV.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
• /
• pp.131-131
• /
• 2000

We witnessed the enhancement of mangetoresistance (MR) in La0.75Ca0.25MnO3 thin films grown on Si (100) substrates by RF magnetron sputtering. The films are polycrystalline with (100) and (110) orientations. The lattice constants of films are reduced as much as 0.9% compared to the one of the bulk sample, which proves that the compressive stress on films was imposed by Si sbustrate. It is found that the MR value (Δ$\rho$/$\rho$0) of films are 0.33, 0.29 and 0.27 under a magnetic field of 1.5T for each films with deposition temperature of $700^{\circ}C$, 75$0^{\circ}C$ and 80$0^{\circ}C$, respectively. The correlation between the MR values and lattice constants of films is discussed. It is concluded that the compressive stress on films cause the enhancement of MR values of thin films grown on Si (1000 substrates. Some mechanism of compressive stress induced by Si substrate is suggested.

• 한국자기학회지
• /
• 제9권3호
• /
• pp.127-130
• /
• 1999

사각형구조를 갖는 Ru 단층에서 살창상수와 자성과의 관계를 총 에너지 총 퍼텐셜 보강 평면 파동(FLAPW) 에너지띠 방법에 의해 연구하였다. 반강자성상태를 고려하기 위해 2개의 원자를 포함하는 사각형에서 살창상수가 7.30a.u.보다 큰 경우는 강자성이었고 그 보다 작은 경우에는 상자성이었다. 반강자성상태도 고려하였으나 총 에너지 계산결과 그 가능성은 없었다. 총 에너지 최소값은 살창상수가 6.53a.u.인 경우로 이 때의 자기적 상태는 상자성이었다. Ag의 살창상수값 근처인 7.72a.u.에서 자기모멘트는 2.49$\mu$B로 계산되었다. 살창상수가 7.86a.u.인 경우에 자기모멘트가 거의 포화되었으며 그 때의 자기모멘트는 2.57$\mu$B이었다.

• 한국진공학회지
• /
• 제17권2호
• /
• pp.109-112
• /
• 2008

고집적화된 반도체 소자 기술은 나날이 발전하고 있다. 특히 금속 배선을 위한 박막제조 공정에서 배선 선폭은 감소하고 있으며, 그 길이는 더욱 증가하게 되었다. 이러한 상황에서 금속 배선 물질에 대한 연구가 진행 되었고 그 결과 Cu가 그 대안으로 인식되었다. 하지만 Cu는 저온에서도 Si기판과 반응하므로 인하여 접촉면의 저항이 급격히 증가하여 소자로써의 기능이 불가능하게 되는 단점이 있다. 따라서 이러한 Cu와 Si기판 사이의 반응을 효과적으로 방지할 확산방지막의 개발이 필수 요건이 되었다. 본 연구는 Cu의 확산을 방지하는 W-C-N 확산방지막에 대한 연구로 질소비율과 열처리 온도를 변화하여 실험하였으며, 특히 격자상수 변화를 통하여 W-C-N 확산방지의 특성에 대하여 연구하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
• /
• pp.97-100
• /
• 2002

$CdGaInS_{4}:Er^{3+}$ single crystal crystallized in the rhombohedral. with lattice constants a = 3.899 $\AA$ and c = 36.970 $\AA$ for $CdGaInS_{4}:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of this compound had a direct and indirect band gaps. the direct and indirect energy gaps are found to be 2.665 and 2.479eV for $CdGaInS_{4}:Er^{3+}$ at 10 K. The photoluminescence spectra of $CdGaInS_{4}:Er^{3+}$ measured in the wavelength ranges of 500 nm~900 nm and 1500~1600 nm at 10 K. Eight sharp emission peaks due to $Er^{3+}$ ion are observed in the regions of 549.5~560.0nm. 661.3~676.5nm. 811.1~ 834.1 nm and 1528.2~1556.0 nm in $CdGaInS_{4}:Er^{3+}$ single crystal. These PL peaks were attributed to the radiative transitions between the split electron energy levels of the $Er^{3+}$ ions occupied at $C_{2v}$ symmetry of the $CdGaInS_4$ single crystals host lattice.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2002년도 춘계학술대회 논문집
• /
• pp.652-655
• /
• 2002

The embedded atom method based on the density functional theory is used for calculating ground state properties of realistic metal systems. In this paper, we had corrected constitutive formulae and parameters on the palladium for the purpose of doing Embedded Atom Method analysis. And then we have computed the properties of the palladium on the fundamental scale of the atomic structure. In result, simulated ground state properties, such as the lattice constant, elastics constants and the sublimation energy, show good agreement with Daw's simulation data and with experimental data.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.121-121
• /
• 2003

NiO thin films are very attractive for use as an antiferromagnetic layer, p-type transparent conducting films, in electrochromic devices and functional sensor layer for chemical sensors, due to their excellent chemical stability, as well as optical, electrical and magnetic properties. In addition, (100)- and (111)-oriented NiO films can be used as buffer layers on which to deposit other oriented oxide films, such as c-axis-oriented perovskite-type ferromagnetic films and superconducting films, because of the similarity in symmetry of oxygen ion lattice and lattice constants between the NiO films and the oriented oxide films. Thus, controlling the crystallographic orientation and surface roughness of the NiO films for a buffer layer are very important.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
• /
• pp.227-250
• /
• 1999

The reproducibility of successive growth of Bi12TiO20(BTO) single crystals using a top-seeded solution growth (TSSG) pulling method was evaluated by measuring the lattice constants and their standard deviations. A substantial phase diagram in the region close to the stoichiometric BTO was established experimentally for this purpose, and the existence of a retrograde solid solution close to a BTO was clarified. It was emphasize that a starting solution, with a 10.0~10.1 mol% TiO2 concentration, results in large single crystals with a highly homogeneous lattice constant of within $\pm$1x10-4$\AA$, when the solidified fraction of the grown crystal is less than about 45%. A wavelength dispersion of refractive index was measured for the first time, an it was verified that the refractive index of BTO is larger than that of BSO(Bi12TiO20), allowing the voltage sensitivity of EOS higher than the case with BSO as a probe head.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.351-374
• /
• 1996

Various types of garnet compounds were synthsized by iso-and aliovalent substitutions and sintering method. Among them, fiber shapes of garnet crystals were grown from the $Ca_3Li_xNb_{(1.5+x)}Ga_{(3.5-2x)}O_{12}$ melt where x = 0 ~ 0.5 by modified micro-pulling down method in air using Pt crucibles. The measured lattice constants as a function of solidification fraction of grown fiber crystals are about $12.54\;{\AA}$ irrespective of x. It was found that the $Ca_3Li_{0.275}Nb_{1.775}Ga_{2.95}O_{12}$ garnet melts congruently at about $1450\;^{\circ}C$ based on the purities of garnet phase and variations of lattice parameter. Transparent and bubble-free crystals of x = 0.25 and 0.275 were grown by Czochralski techniques in air using Pt crucibles. An absorption spectrum is also reported.