• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1835-1837
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• 2005

$Bi_{3.25}Y_{0.75}Ti_3O_{12}$[BYT] ferroelectric thin films were deposited by RF-Sputtering method on the $Pt/Ti/SiO_2/Si$. We investigated the effects of processing condition (especially post-annealing) on the structural and dielectric properties of the BYT thin films. The BYT thin films were crystallized well at annealing temperature of $750^{\circ}C$ for 30min. Increasing the annealing temperature, the peak intensity of (117) and c-axis orientation were increased. The calculated lattice constants of BYT thin films were a=0.539nm, b=0.536nm, c=3.288nm. The thickness of the BYT thin films were 350nm. The dielectric constant and dielectric loss at a frequency of 100KHz were 73.3 and 0.021, respectively. The BYT thin films can be used as capacitors in the Ferroelectric Random Access Memory device.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.719-724
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• 2006

Ultrafine mullite powder was prepared from aluminium-secbutoxide and tetraethyl orthosilicate(TEOS) in the molar $Al_2O_3/SiO_2$=3/2. Sol-gel method by partial hydrolysis technique, as it were, first, TEOS was partially hydrolysized and then mixed with Al-secbutoxide for complete hydrolysis was used. X-ray diffraction, infrared spectroscopy and transmission electron microscopy, etc. confirmed that the mullite powder prepared by this method is in the stoichiometric $Al_2O_3/SiO_2$ ratio. Al-Si spinel was formed at $980^{\circ}C$ and ultrafine mullite powder with about 20 nm particle size was obtained above $1,200^{\circ}C$. Also mullite powders calcined at $1,600^{\circ}C$ had a stoichiometric composition, $3Al_2O_3{\cdot}2SiO_2$ and the lattice constants of the mullite powders calcined above $1,200^{\circ}C$ were almost coincided with theoretical values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.648-651
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• 2004

Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

• Bulletin of the Korean Chemical Society
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• v.15 no.11
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• pp.980-984
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• 1994

Monomeric rhodium and iridium diimine complexes $Cp^*M(HNRNH)(Cp^*$ = 1,2,3,4,5-pentamethylcyclopentadienyl : (M=lr; R=o-$C_6H_4 (1a), 4,5-(CH_3)_2-C_6H_2-1,2 (1b), 4,5-(Cl)_2-C_6H_2-1,2$ (1c), NCC=CCN-1,2 (1d): M=Rh; R=NCC=CCN-1,2 (1e)) have been synthesized from $[CP^*MCl_2]_2$ and 2 equiv. of diamine in the presence of $NEt_3$. The Crystal structure of 1a was determined by X-ray diffraction method : 1a was crystallized in the monoclinic system, space group $P2_{1/c}$, with lattice constants a=9.543 (1) ${\AA}$, b=16.286 (1) ${\AA}$, c=10.068 (1) ${\AA}$ and ${\beta}$=99.25 (1), with Z= 4. Least-squares refinement of the structure led to R factor of 0.049. The coordination sphere of rhodium and iridium can be described as a 2-legged piano-stool. All complexes are highly colored. Electrochemical studies show that 1d and 1e display quasi-reversible reduction and 1a-1c display irreversible reductions, suggesting that the acceptor orbital might be localized on the diimine ring.

• Bulletin of the Korean Chemical Society
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• v.22 no.11
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• pp.1231-1235
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• 2001

Pseudotetragonal ZrO0.75S whose space group is P212121 was synthesized and the cell dimensions were a=5.110(2) $\AA$, b=5.110(7) $\AA$, and c=5.198(8) $\AA.$ The space group P212121 seems to be resulted from lowering the symmetry of cubic ZrOS structure with P213 space group by lattice distortion due to the oxygen defects. In the distorted structure, bond shortening between metal-nonmetal by reduction of cell volume and alternation of Zr-Zr distance were observed. Dielectric constant and loss data of the bulk material in temperature range -170 to 20 $^{\circ}C$ and frequency range 50 Hz to 1 MHz showed that there was dielectric transition at around -70 $^{\circ}C$ originated from the relaxation of Zr-S segment. Comparing with ZrO2 exhibited the dielectirc constants, 9.0 at room temperature, ZrO0.75S showed high dielectric constant, k = 200.2 at 100 kHz. The activation energy of relaxation time due to dielectric relaxation of Zr-S was 0.47 eV (11.3 kcal/mole). According to the impedance spectra, ZrO0.75S showed more parallel circuit character between the resistance and capacitance components at the temperature (-70 $^{\circ}C)$ that the Zr-S dielectric relaxation was observed.

• Journal of Magnetics
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• v.18 no.1
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• pp.26-29
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• 2013

$Mn_xFe_{3-x}O_4$ powders have been fabricated by using sol-gel methods; their crystallographic and magnetic properties were investigated by using X-ray diffraction, scanning electron microscopy, M$\ddot{o}$ssbauer spectroscopy, and vibrating sample magnetometer. The $Mn_xFe_{3-x}O_4$ ferrite powders annealed at $500^{\circ}C$ had a single spinel structure regardless of the $Mn^{2+}$-doping amount and their lattice constants became larger as the $Mn^{2+}$ concentration was increased. Their Mossbauer spectra measured at room temperature were fitted with 2 Zeeman sextets due to the tetrahedral and octahedral sites of Fe ions, which made them ferrimagnetic. The magnetic behavior of $Mn_xFe_{3-x}O_4$ powders showed that the $Mn^{2+}$-doping amount made their saturation magnetization increase, but there were no severe effects on their coercivities. The saturation magnetization of the $Mn_xFe_{3-x}O_4$ powder varied from 38 emu/g to 70.0 emu/g and their minimum coercivity was 111.1 Oe.

• Journal of Magnetics
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• v.18 no.1
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• pp.39-42
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• 2013

We studied the structural and electrical properties of $SrRuO_3$ thin films grown on $SrTiO_3$ (110) substrate. High resolution X-ray diffraction measurement of the grown film showed 1) very sharp peaks for $SrRuO_3$ film with a very narrow rocking curve with FWHM = $0.045^{\circ}$ and 2) coherent growth behavior having the same in-plane lattice constants of the film as those of the substrate. The resisitivity data showed good metallic behavior; ${\rho}$ = 63(205) ${\mu}{\Omega}{\cdot}cm$ at 5 (300) K with a residual resistivity ratio of ~3. The observed kink at ${\rho}(T)$ showed that the ferromagnetic transition temperature was ~10 K higher than that of $SrRuO_3$ thin film grown on $SrTiO_3$ (001) substrate. The observed rather lower RRR value could be partially due to a very small amount of Ru vacancy generally observed in $SrRuO_3$ thin films grown by PLD method and is evident in the larger unit-cell volume compared to that of stoichiometric thin film.

• Bulletin of the Korean Chemical Society
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• v.13 no.3
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• pp.296-306
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• 1992

$^{13}C$ spin-lattice relaxation times were measured for n-alkanes of moderate chain length, ranging from n-octane to n-dodecane, under the condition of proton broad-band decoupling within the temperature range of 248-318 K in order to gain some insight into basic features of segmental motions occurring in long chain ploymeric molecules. The NOE data showed that except for methyl carbon-13 dipole-dipole interactions between $^{13}C$ and directly bonded $^1H$ provide the major relaxation pathway, and we have analyzed the observed $T_1data$ on the basis of the internal rotational diffusion theory by Wallach and the conformational jump theory by London and Avitabile. The results show that the internal rotational diffusion constants about C-C bonds in the alkane backbone are all within the range of $10^9\;-10^10\;sec^{-1}$ in magnitude while the mean lifetimes for rotational isomers are all of the order of $10^{-11}\;-10^{-10}$ sec. Analysis by the L-A theory predicts that activation energies for conformational interconversion between gauche and trans form gradually increase as we move from the chain end toward the central C-C bond and they are within the range of 2-4 kcal/mol for all the compounds investigated.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1370-1376
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• 2018

The electronic structures, magnetic properties and half-metallicity in $Zr_2RuZ$ (Z = Ga, In, Tl, Ge, Sn, and Pb) alloys with $AlCu_2Mn-$ and $CuHg_2Ti$-type structures were investigated using first-principles density functional theory (DFT) calculations. The calculations showed that $Zr_2RuIn$, $Zr_2RuTl$, $Zr_2RuSn$, and $Zr_2RuPb$ compounds with $CuHg_2Ti$-type structures were half-metallic ferromagnets with half-metallic band gaps of 0.18, 0.24, 0.22, and 0.27 eV, respectively. The half-metallicity originated from d-d and covalent hybridizations between the transition metals Zr and Ru. The total magnetic moments of the $Zr_2RuZ$ (Z = In, Tl, Sn, and Pb) compounds with $CuHg_2Ti$-type structures were integer values of $1{\mu}B$ and $2{\mu}B$, which is in agreement with Slater-Pauling rule ($M_{tot}=Z_{tot}-18$). Among these compounds, $Zr_2RuIn$ and $Zr_2RuTl$ were half-metals over relatively wide regions of the lattice constants, indicating that these two new Heusler alloys are ideal candidates for use in spintronic devices.

• Journal of Ceramic Processing Research
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• v.20 no.4
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• pp.395-400
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• 2019

This study was conducted on the structural and electrical properties of (Ba0.7Sr0.3)TiO3 thin films prepared by the sol-gel and spin-coating methods in order to investigate their applicability to electrocaloric devices. All specimens showed a tetragonal crystal structure and lattice constants of a = 3.972 Å, c = 3.970 Å. The mean grain size of specimens sintered at 800 ℃ was about 30 nm, and the average thickness of 5 times coated specimens was 304~311 nm. In the specimen sintered at 750 ℃, The relative dielectric constant and loss of specimens measured at 20 ℃ were 230 and 0.130, respectively, while dependence of the dielectric constant on unit DC voltage was -8.163 %/V. The remanent polarization and coercive fields were 95.5 μC/㎠ and 161.3 kV/cm at 21 ℃, respectively. And, the highest electrocaloric property of 2.69 ℃ was observed when the electric field of 330 kV/cm was applied.