• 제어로봇시스템학회논문지
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• 제8권5호
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• pp.419-424
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• 2002

After the patterning and probe process of wafer have been achieved, the dicing processing is necessary to separate chips from a wafer. The dicing process cuts a semiconductor wafer to lengthwise and crosswise directions to make many chips. The existing general dicing method is the mechanical cutting using a narrow circular rotating blade impregnated diamond particles or laser cutting. Inferior goods can be made by the mechanical or laser cutting unless several parameters such as blade, wafer, cutting water and cutting conditions are properly set. Moreover, we can not apply these general dicing method to that of GaN wafer, because the GaN wafer is harder than general semiconductor wafers such as GaAs, GaAsP, AIGaAs and so forth. In order to overcome these problems, this paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism.

• 전기학회논문지
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• 제57권10호
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• pp.1802-1806
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• 2008

Dye-sensitized solar cell (DSC) based on some advantages such as transparency, cheap materials and anti-sensibility for an anlge of incidence has been expected to capture most of solar cell market in the near future. To practical use of DSC, researches on high efficiency as well as upscaling are necessary. In this study, we tried to insert the grid electrode in DSC and scribe transparent conducting oxide (TCO) using Nd:YAG laser. The grid electrode makes the electron movement improved and diffusional movement minimized. Consequently, the efficiency of DSC was increased by reducing electron loss and the surface resistance of TCO. The grid electrode was made using Ag target by radio frequency sputtering. And the scribed surface was confirmed by taking a scanning electron microscopy photos. As the result, grid cell had improved photocurrent and fill factor as compared with the conventional cell. And the efficiency was increased about 1% by enhanced photocurrent and fill factor.

• Current Photovoltaic Research
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• 제6권4호
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• pp.119-123
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• 2018

The High Performance Module With The Shingled String Has Several Advantages Such As The Larger Active Area, Higher Open-Circuit Voltage And Smaller Cell To Module (Ctm) Loss. To Obtain Increase Of Power In Pv Shingled Module, The Detailed Condition Of Various Parameters Related To Cutting And Bonding Process Were Investigated In This Study. We Searched The Optimized Cutting Conditions Of Laser Scan Speed, The Number Of Laser-Scribing And Also Bonding Conditions Of Electrically Conductive Adhesives (Eca) By Varying Amount Of Eca, Curing Time And Curing Temperature. The Shingled Pv Module Showed 25.4W of Maxmimum Power At 60 Rpm Of Dipensing Motor Speed, 30 Seconds Of Curing Time And $140^{\circ}C$ Of Curing Temperature, Respectively.

• 한국정밀공학회지
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• 제27권6호
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• pp.32-38
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• 2010

Laser material processing technology is adopted in several industry as alternative process which could overcome weakness and problems of present adopted process, especially semiconductor and display industry. In semiconductor industry, laser photo lithography is doing at front-end level, and cutting, drilling, and marking technology for both wafer and EMC mold package is adopted. Laser cleaning and de-flashing are new rising technology. There are 3 kinds of main display industry which use laser technology - TFT LCD, AMOLED, Touch screen. Laser glass cutting, laser marking, laser direct patterning, laser annealing, laser repairing, laser frit sealing are major application in display industry.

• 한국레이저가공학회지
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• 제8권2호
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• pp.7-12
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• 2005

The material processing of UV nanosecond pulse laser cannot be avoided the material shape change and contamination caused by interaction of base material and laser beam. Nowadays, ultra short pulse laser shorter than nanosecond pulse duration is used to overcome this problem. The advantages of this laser are no heat transfer, no splashing material, no left material to the adjacent material. Because of these characteristics, it is so suitable for micro material processing. The processing of sapphire wafer was done by UV 355nm, green 532nm, IR 1064nm. X-Y motorized stage is installed to investigate the proper laser beam irradiation speed and cycles. Also, laser beam fluence and peak power are calculated.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.248-248
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• 2003

• Current Photovoltaic Research
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• 제8권4호
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• pp.120-123
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• 2020

Transparent photovoltaics (PV) are used in various applications such as building-integrated photovoltaics (BIPV). However, crystalline silicon (c-Si) is not used for developing transparent PV due to its opaque nature. Here. we fabficate the three holes in 6-inch c-Si solar cells using laser scribing process with an opening area ratio of about 6.8% for transparent c-Si solar modules. Moreover, we make the shingled strings using the perforated cells. Our 7 interconnected shingled string PV cells with 21 holes show a solar to power conversion of 5.721 W. In next work, we will fabricate a transparent c-Si PV module with perforated strings.

• Current Photovoltaic Research
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• 제11권3호
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• pp.75-78
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• 2023

Recently, the installation of photovoltaic modules in urban areas has been increasing. In particular, the demand for solar modules installed in a limited space is increasing. However, since the crystalline silicon solar module's size is proportional to the solar cell's size, it is difficult to manufacture a module that can be installed in a limited area. In this study, we fabricated a solar module with a shingled design that can control horizontal and vertical width using a bi-directional laser scribing method. We fabricated a string cell with a width of 1/5 compared to the existing shingled design string cells using a bi-directional laser scribing method, and we fabricated a solar module by connecting three strings in parallel. Finally, we achieved a conversion power of 5.521 W at a 103 mm × 320 mm area.

• 한국정밀공학회지
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• 제22권12호
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• pp.184-189
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• 2005

An experimental study of the femtosecond laser machining of Si materials was carried out. Direct laser machining of the materials for the feature size of a few micron scale has the advantage of low cost and simple process comparing to the semiconductor process, E-beam lithography, ECM and other machining process. Further, the femtosecond laser is the better tool to machine the micro parts due to its characteristics of minimizing the heat affected zone(HAZ). As a result of line cutting of Si, the optimal condition had the region of the effective energy of 2mJ/mm-2.5mJ/mm with the power of 0.5mW-1.5mW. The polarization effects of the incident beam existed in the machining qualities, therefore the sample motion should be perpendicular to the projection of the electric vector. We also observed the periodic ripple patterns which come out in condition of the pulse overlap with the threshold energy. Finally, we could machined the groove with the linewidth of below $2{\mu}m$ for the application of MEMS device repairing, scribing and arbitrary patterning.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.148-148
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• 2003