• The Transactions of the Korean Institute of Electrical Engineers P
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• v.65 no.3
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• pp.224-234
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• 2016

This study developed the conductivity pattern of solid surface using laser direct pattern and compound polymer material technology. For development direct patterning system of solid surface, we used the laser power stabilizer, the dynamic focusing, 3D scanner S/W and the auto aligning techniques. Also For conductivity pattern, we are developed compound polymer material with additive by electro-less plating. These technologies are already used commercially. However operation and control integrated system for direct patterning of solid surface are not yet developed. The objective of this paper is to introduce the laser direct structuring for simple process improvement instead complex PCB process, and develop the operating stability and integration system. Also we implemented new application of laser direct structuring through sample manufacture.

• Textile Coloration and Finishing
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• v.35 no.2
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• pp.121-127
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• 2023

In this study, a comprehensive investigation was conducted on the morphological and property changes of laser-induced nanocarbon (LINC) as a function of laser process parameters. LINC was formed on the surfaces of polyimide films with different backbone structures under various process conditions, including laser power, scan speed, and resolution. Three different forms of LINC electrodes (i.e., continuous 3D porous graphene, wooly nanocarbon fibers, line cut) were formed depending on the laser power and scan speed. Furthermore, heteroatom doping induced from the chemical structure of the polyimide during laser patterning was found to be effective in modifying the electrical properties of LINC electrodes. The LINC surfaces exhibited different microstructures depending on the laser beam resolution under constant laser power and scan speed, allowing for controllable surface wettability. The correlation between the chemical structure of the polymer substrate, laser process parameters, and carbonized surface properties in this study is expected to be utilized as fundamental understanding for the manufacturing of next-generation carbon-based electronic devices.

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.49-49
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• 2002

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.6-11
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• 2019

For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO₄ laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.8-12
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• 2008

For the reduction of fabrication cost and process time of AC plasma display panel (PDP), indium tin oxide (ITO) layer was patterned as bus electrode using Nd:$YVO_4$ laser. In comparison with the chemically wet etched ITO patterns, laser ablated ITO patterns showed the formation of shoulders and ripple-like structures at the edge of the ITO lines. For the reduction of shoulders and ripple-like structures, pulse repetition rate and scan velocity of laser was changed. In addition, we analyzed a discharge characteristic of PDP test panel to observe how the shoulders and ripple-like structures influence on the PDP. Based on experimental results, the pattern etched at the 500 mm/s and 40 kHz was better than any other condition. From this experiment we could see the possibility of the laser direct patterning for the application to the patterning of ITO in AC-PDP.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.59-62
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• 2013

At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched $Nd:YVO_4$ laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.340-343
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• 2000

ITO(Indium Tin Oxide) films for transparent electrodes of FPD(Flat Panel Display) were patterned in atmosphere using laser. A pulse type(repetition rate of 10 Hz) Q-switched Nd:YAG laser which can generate the fundamental wavelength at 1064 nm or its harmonics(532, 266 nm) was used for Patterning of the ITO film. In case of using the second harmonic(532 nm) of Nd:YAG laser, the ITO film(thickness of 20 nm) was removed clearly with a laser fluence of 5.2 J/$\textrm{cm}^2$ and a beam scan speed of 200${\mu}{\textrm}{m}$/s. But the glass substrate was damaged when the laser fluence was over 5.2 J/$\textrm{cm}^2$. We discussed the etching mechanism of the ITO film using Nd:YAG laser with observation of the etching characteristics including a depths and widths of ITO films as a function of laser fluence using SEM(Scanning Electron Microscopy) and surface profiler($\alpha$-step 500).

• Proceedings of the Korean Society of Laser Processing Conference
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• 2001.05a
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• pp.92-95
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• 2001

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.41-42
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• 2011

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.583-588
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• 2005

Indium tin oxide (ITO) is a commonly used conducting transparent oxide film (CTO) used in flat panel display applications. Direct write laser ablation is sometimes employed for ITO patterning and it is important that the substrate material and remaining ITO be affected as little as possible by the laser ablation. In this investigation, femtosecond laser ablation of ITO was studied to identify laser processing parameters which cleanly ablated ITO with a minimum of damage to a glass substrate and surrounding ITO. The Ti:Sapphire chirp pulse amplified femtosecond laser used for the experiments had a wavelength of 775nm and produced pulses with a duration of 150fs at a rate of 2 kHz. Ablation was carried out at a sufficiently high panel scanning speed that single ablation spots could be studied. The pulse energy was adjusted to determine feasible spot diameters and depths which could be ablated into the ITO without damaging the glass substrate. Next, ablation of lines without glass damage was also demonstrated. Experiments were also performed with a high repetition rate (100kHz) femtosecond laser.