• Title/Summary/Keyword: Laser patterning

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Laser Microfabrications for Next-Generation Flat Panel Display (레이저를 이용한 차세대 평판 디스플레이 공정)

  • Kim, Kwang-Ryul
    • Korean Journal of Materials Research
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    • v.17 no.7
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    • pp.352-357
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    • 2007
  • Since a pattern defects "repair" system using a diode pumped solid state laser for Flat Panel Display (FPD) was suggested, a lot of laser systems have been explored and developed for mass-production microfabrication process. A maskless lithography system using 405 nm violet laser and Digital Micromirror Device (DMD) has been developed for PDP and Liquid Crystal Display (LCD) Thin Film Transistor (TFT) photolithography process. In addition, a "Laser Direct Patterning" system for Indium Tin Oxide (ITO) for Plasma Display Panel(PDP) has been evaluated one of the best successful examples for laser application system which is applied for mass-production lines. The "heat" and "solvent" free laser microfabrications process will be widely used because the next-generation flat panel displays, Flexible Display and Organic Light Emitting Diode (OLED) should use plastic substrates and organic materials which are very difficult to process using traditional fabrication methods.

The ablation of ITO thin films by KrF Eximer laser and its characteristics (KrF 엑시머 레이저에 의한 ITO 박막의 어블레이션과 표면특성관찰)

  • Lee, Kyoung-Cheol;Lee, Cheon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.511-514
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    • 2000
  • This work aimed to develop ITO (Indium Tin Oxide) thin films ablation with a KrF Eximer laser required for the application in flat panel display, especially patterning into small geometry on a large substrate area. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/cm$^2$. And its value is much smaller than using third harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the damaged ITO is changed into dark brown and irradiated spot is completely isolated form the undamaged surroundings by laser light. The XPS analysis showed that the relative surface concentration of Sn and In were essentially unchanged (In :Sn=5:1) after irradiating Eximer laser. Using aluminium mask made by second harmonic Nd:YAG laser the ITO patterning is carried out.

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A Study of the Yellowing Phenomenon in the Laser Patterning of Silver Nanowire (은 나노와이어 레이저 패터닝 시 발생하는 황변 현상에 대한 연구)

  • Hwang, June Sik;Park, Jong Eun;Yang, Min Yang
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.24 no.1
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    • pp.94-97
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    • 2015
  • In this study, we introduce a yellowing phenomenon in silver nanowire laser patterning and attempt to understand the cause of this phenomenon. Silver nanowire is a promising alternative to indium tin oxide as a transparent electrode owing to its flexibility. Additionally, silver nanowire can be easily patterned by laser ablation, which is free of dangerous chemicals. However, a yellowish color change reducing visibility is observed on the patterned area of the silver nanowires, and this yellowing phenomenon prevents the use of silver nanowire as a transparent electrode material. We concluded that resolidified debris of melted and evaporated silver nanowires after laser ablation causes the color change of the electrode. Further research is needed to determine a means of mitigating this yellowing phenomenon.

A Study on the Characteristics of the Functional Groups of the Alkanethiol Molecules in UV Laser Photochemical Patterning and Wet Etching Process (UV Laser를 이용한 광화학적 패터닝과 습식에칭에 따른 알칸티올 분자 작용기의 특성 연구)

  • Huh, Kab-Soo;Chang, Won-Seok
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.5
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    • pp.104-109
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    • 2007
  • Photochemical patterning of self-assembled mono layers (SAMs) has been performed by diode pumped solid state (DPSS) 3rd harmonic Nd:$YVO_4$ laser with wavelength of 355 nm. SAMs patternings of parallel lines have subsequently been used either to generate compositional chemical patterns or fabricate microstructures by a wet etching. This paper describes a selective etching process with patterned SAMs of alkanetiolate molecules on the surface of gold. SAMs formed by the adsorption of alkanethiols onto gold substrate employs as very thin photoresists. In this paper, the influence of the interaction between the functional group of SAMs and the etching solution is studied with optimal laser irradiation conditions. The results show that hydrophobic functional groups of SAMs are more effective for selective chemical etching than the hydrophilic ones.

Micro-patterning of Multi-layered Magnetic Metal Films Using Nd:YAG Laser (Nd:YAG Laser를 이용한 자성금속 막의 패턴 식각)

  • Chae, Sang-Hun;Seo, Yeong-Jun;Song, Jae-Seong;Min, Bok-Gi;An, Seung-Jun;Lee, Ju-Hyeon
    • Korean Journal of Materials Research
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    • v.10 no.2
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    • pp.171-174
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    • 2000
  • In this study, the laser patterning of sputter-deposited amorphous CoNbZr films has been tried usig Nd: YAG laser. However, the metal film was not removed because of its high reflectance of the alser on the metal surface. To solve this problem, authors tried to screen-print a block polymer on the metal film and then irradiate the laser on the polymer. This is a new method which was suggested by this study. Using this new method, the metal films were effectively removed with the laser power of 114W even though the metal films was not removed with the laser power of 332W using the conventional method. This result leads to the conclusion that the block polymer acts as a laser energy absorbing and transferring layer.

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A Study on Laser Micro-Patterning using UV Curable Polymer (광경화성 폴리머를 이용한 레이저 미세패터닝의 기초연구)

  • 김정민;신보성;김재구;장원석;양성빈
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.612-615
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    • 2003
  • Maskless laser patterning process is developed using 3rd harmonic Diode Pumped Solid State Laser with near visible wavelength of 355 nm. Photo-sensitive curable polymer is irradiated by UV laser and developed using polymer solvent to obtain quasi-3D patterns. We performed basic experiments for the various process conditions such as laser power, writing speed, laser focus, and polymer optical property to gain the optimal conditions. Experimentally, the patterns of trapezoidal shape were manufactured into dimension of 8${\mu}{\textrm}{m}$ width and 5.4${\mu}{\textrm}{m}$ height. This process could be applied to fabricate a single mode waveguide without expensive mask projection method.

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Auto-focusing laser direct writing system using confocal geometry (공초점 정렬을 이용한 자동초점보정 레이저 직접묘화 시스템)

  • Kim, Yong-Woo;Lee, Jin-Seok;Kim, Kyoung-Sik;Hahn, Jae-Won
    • Proceedings of the Korean Society of Laser Processing Conference
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    • 2006.06a
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    • pp.123-128
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    • 2006
  • We constructed a micro-patterning system that build patterns on a photoresist coated wafer using laser direct writing system. Confocal microscope system was adapted for real-time auto-focusing of the laser writing lens to generate lines of uniform width.

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Patterning of ITO on Touch Screen Panels using a beam shaped femtosecond laser (빔 쉐이핑된 펨토초 레이저를 이용한 터치스크린 패널의 ITO 박막 패터닝)

  • Kim, Myung-Ju;Kim, Yong-Hyun;Yoon, Ji-Wook;Choi, Won-Seok;Cho, Sung-Hak;Choi, Jiyeon
    • Laser Solutions
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    • v.16 no.4
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    • pp.1-6
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    • 2013
  • Femtosecond laser patterning of ITO on a touch screen panel with a shaped fs laser beam was investigated. A quasi flat-top beam was formed using a variable mask and a planoconvex lens. The spatial profile of the original Gaussian beam and the shaped beam were monitored by a CCD beam profiler. The laser patterned ITO film was examined using an optical microscope, Scanning Electron Microscope (SEM) with Energy Dispersive X-ray Spectroscopy (EDS), and Atomic Force Microscope (AFM). It turned out that the quality of the ITO pattern fabricated by a shaped beam is superior to that of the pattern without beam shaping in terms of debris generation, height of the craters, and homogeneity of the bottom. Optimum processing window was determined at the laser irradiance exhibiting 100% removal of Sn. The removal rate of In was measured to be 83%.

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