• ETRI Journal
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• 제37권6호
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• pp.1135-1142
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• 2015

Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.331-332
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• 2008

Couplings between electric, magnetic, and structural order parameters result in the so-called multiferroic phenomena with two or more ferroic phenomena such as ferroelectricity, ferromagnetism, or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) permits potential applications in information storage, spintronics, and magnetic or electric field sensors. The perovskite BiFeO3(BFO) is known to be antiferromagnetic below the Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors responsible for leakage current in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is to make donor-doped BFO compounds and thin films. In this study, (Bi1-x,Ndx)(Fe1-y,Tiy)O3 thin films have been deposited on Pt(111)/TiO2/SiO2/Si substrates by pulsed laser deposition. The effect of dopants on the phase evolution and surface morphology are analyzed. Furthermore, electrical and magnetic properties are measured and their coupling characteristics are discussed.

• Transactions on Electrical and Electronic Materials
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• 제7권3호
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• pp.149-153
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• 2006

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using $Ti_{1-x}Co_xO_{2-\delta}-based$ thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T$Ti_{0.97}Co_{0.03}O_{2-\delta}-based$ (TCO) films deposited at $500^{\circ}C$ at a pressure of $5\times10^{-6}$ Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at $700^{\circ}C$ at $5\times10^{-6}$ Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately $7.9\times10^{22}/cm^3$ at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.

• 지구물리
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• 제6권4호
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• pp.277-294
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• 2003

구조물의 시간경과에 따른 변형 및 성능저하 현상은 인위적 요인 및 시간경과에 따른 지반상태의 변화 혹은 지반 변위요인의 누적에 의해 발생한다 본 연구에서는 경상남도 경주시에 위치한 첨성대를 연구대상으로 설정하였다. 첨성대는 약 1,300여 년 전 건립된 석축구조물로서 지반침하로 약간 기울어져 있으며 일부 석재 사이의 틈이 벌어져 있는 상태이다 본질적인 대책수립을 위하여 본 연구에서는 이러한 목적을 위하여 차원 레이저스캐닝시스템에 의한 형상 역공학적 연구 물리탐사에 의한 지반공학적 특성 연구 및 고유진동수 측정에 의한 첨성대의 동적특성 등의 다음과 같은 연구들을 수행하였다 첫째 정밀측량에 의한 첨성대의 정밀한 변형량 측정 및 지속적인 변위측정을 위하여 차원 레이저 스캐닝에 의한 첨성대의 차원 공간위치정보를 취득하여 형상역공학에 의한 차원 벡터 이미지 형상구현 및 첨성대의 크기 변위량 변위방향 등 여러 가지 제원을 구하고자 하였다 둘째 다양한 비파괴적 물리탐사 방법들을 적용하여 첨성대 및 주변 지반의 물성분포 및 지반특성을 파악하고자 하였다 한편 다양한 물리탐사를 통하여 향후 유사한 조사에 있어서 적절한 물리탐사 방법을 제시하고자 하였다 셋째 경주 첨성대의 1/10모형에 대한 동적특성실험 및 실물에 대한 고유진동수 측정을 통해 첨성대의 구조적 특성을 연구하여 첨성대의 구조특성 및 상태판단 및 동적특성 파악에 의한 내진성능을 판단하고자 하였다.

• 한국결정성장학회지
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• 제6권1호
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• pp.88-97
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• 1996

태양전지의 전극형성은 전지의 가격과 성능 그리고 시스댐의 신뢰성을 결정하는데 매우 중요한 변수이다. 기폰의 스크련 프린팅 기술은 전면전극에 냐쁜 영향을 미치는 여러가지 제약들을 가지고 었다. 전극함몰형 태양전지는 기존의 전극에서 발생하는 문제점을 극복하고 저가격 대량생산을 위해서 고안된 것이다. 본 논문에서는 무전해 도금방법을 사용하여 함몰형 전지의 전극을 형성하는 공정을 최적화함으로써 값싸고 재현성있게 전지를 제조할 수 있었다. 무전해 도금용액으로는 상엽적으로 사용되는 니켈, 구리, 은 용액을 사용하었으며, 전지의 효울 을 최고 18.8 %까지 얻었다. 이때 전지의 개방전압은 651 mV, 단락전류밀도는 37.1 mA/$\textrm{cm}^2$, 충실도는 77.8 % 었으며 배치에서 90 % 이상의 전지가 18 % 이상의 효율을 나타내었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.16.1-16.1
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• 2009

We have fabricated solution processed oxide semiconductor active layer for thin film transistors (TFTs). The oxide semiconductor layers were prepared by ink-jet printing the sol-gel precursor solution based on doped-ZnO. Inorganic ZnO-based thin films have drawn significant attention as an active channel layer for TFTs applications alternative to conventional Si-based materials and organic semiconducting materials, due to their wide energy band gap, optical transparency, high mobility, and better stability. However, in spite of such excellent device performances, the fabrication methods of ZnO related oxide active layer involve high cost vacuum processes such as sputtering and pulsed laser deposition. Herein we introduced the ink-jet printing technology to prepare the active layers of oxide semiconductor. Stable sol-gel precursor solutions were obtained by controlling the composition of precursor as well as solvents and stabilizers, and their influences on electrical performance of the transistors were demonstrated by measuring electrical parameters such as off-current, on-current, mobility, and threshold voltage. Microstructure and thermal behavior of the doped ZnO films were investigated by SEM, XRD, and TG/DTA. Furthermore, we studied the influence of the ink-jet printing conditions such as substrate temperature and surface treatment on the microstructure of the ink-jet printed active layers and electrical performance. The mobility value of the device with optimized condition was about 0.1-1.0 $cm^2/Vs$ and the on/off current ratio was about $10^6$. Our investigations demonstrate the feasibility of the ink-jet printed oxide TFTs toward successful application to cost-effective and mass-producible displays.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.423-423
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• 2007

In this study, the effects of annealing conditions on the structural and optical properties of ZnO films were investigated. ZnO oxide (ZnO) films were deposited onto $SiO_2$/Si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500{\sim}650^{\circ}C$ in the $O_2$ flow for 5 ~ 20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterized by SEM and XRD, respectively. The optical properties were evaluated by PL measurement at room temperature using a He-Cd 325 nm laser. According to the results, the optimal annealing conditions for the best photoluminescence (PL) characteristics were found to be oxygen fraction, ($O_2/O_2+Ar$) of 20%, RF power of 240W, substrate temperature of RT (room temperature), annealing condition of $600^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr. The obtained wavelength of light emission was found at 379 nm (ultraviolet-UV region). However, the optimal parameters for the best PL characteristics of ZnO thin films were not consistent with those obtained from the (002) intensities of XRD analyses. As a result, XRD pattern was not considered as the key issue concerning the intensity of PL of ZnO thin film. The intensity of the emitted UV light will correspond to the grain size of ZnO film.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.831-836
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• 2014

One-dimensional (1D) photonic crystals (PCs) were prepared by $TeO_x(2<x<3)/SiO_2$ with the difference refractive index, and fabricated by sputtering technique from a $TeO_2$ and $SiO_2$ target. The $TeO_x$(2$Ar:O_2=40:10$). A 10-pair $TeO_x(2<x<3)/SiO_2$ 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410 nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. A normal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to 1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. The measured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laser exposure, the defect level is shifted from 1,291 nm to 1,304 nm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.277.2-277.2
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• 2013

Petri dishes and glass slides have been widely used as general substrates for in vitro mammalian cell cultures due to their culture viability, optical transparency, experimental convenience, and relatively low cost. Despite the aforementioned benefit, however, the flat two-dimensional substrates exhibit limited capability in terms of realistically mimicking cellular polarization, intercellular interaction, and differentiation in the non-physiological culture environment. Here, we report a protocol of culturing embryonic rat hippocampal neurons on the electro-spun polymeric network and the results from examination of neuronal cell behavior and network formation on this culture platform. A combinatorial method of laser-scanning confocal fluorescence microscopy and live-cell imaging technique was employed to track axonal outgrowth and synaptic connectivity of the neuronal cells deposited on this model culture environment. The present microfiber-based scaffold supports the prolonged viability of three-dimensionally-formed neuronal networks and their microscopic geometric parameters (i.e., microfiber diameter) strongly influence the axonal outgrowth and synaptic connection pattern. These results implies that electro-spun fiber scaffolds with fine control over surface chemistry and nano/microscopic geometry may be used as an economic and general platform for three-dimensional mammalian culture systems, particularly, neuronal lineage and other network forming cell lines.

• Restorative Dentistry and Endodontics
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• 제39권4호
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• pp.276-281
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• 2014

Objectives: The purpose of this study was to compare the cutting efficiency of a newly developed microprojection tip and a diamond-coated tip under two different engine powers. Materials and Methods: The apical 3 mm of each root was resected, and root-end preparation was performed with upward and downward pressure using one of the ultrasonic tips, KIS-1D (Obtura Spartan) or JT-5B (B&L Biotech Ltd.). The ultrasonic engine was set to power-1 or -4. Forty teeth were randomly divided into four groups: K1 (KIS-1D / Power-1), J1 (JT-5B / Power-1), K4 (KIS-1D / Power-4), and J4 (JT-5B / Power-4). The total time required for root-end preparation was recorded. All teeth were resected and the apical parts were evaluated for the number and length of cracks using a confocal scanning micrscope. The size of the root-end cavity and the width of the remaining dentin were recorded. The data were statistically analyzed using two-way analysis of variance and a Mann-Whitney test. Results: There was no significant difference in the time required between the instrument groups, but the power-4 groups showed reduced preparation time for both instrument groups (p < 0.05). The K4 and J4 groups with a power-4 showed a significantly higher crack formation and a longer crack irrespective of the instruments. There was no significant difference in the remaining dentin thickness or any of the parameters after preparation. Conclusions: Ultrasonic tips with microprojections would be an option to substitute for the conventional ultrasonic tips with a diamond coating with the same clinical efficiency.