• 제목/요약/키워드: Laser diodes

검색결과 187건 처리시간 0.022초

아날로그 광 전송 시스템에서의 IMD3에 의한 CIR 시뮬레이션 (Simulation of IMD3 induced CIR for analog optical transmission systems)

  • 장승현;이철수;설동민;정의석;김병휘
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 학술대회 논문집 정보 및 제어부문
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    • pp.475-477
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    • 2005
  • We simulated 3rd order intermodulation distortion (IMD3) induced Carrier-to-Intermodulation Ratio (CIR) of laser diodes over a wide range of optical modulation index, and compared the results with commercial IMD3 induced CIR specification such as Composite Triple Beat (CTB) of DFB laser transmitter for CATV networks. It shows that the simulation results are in good agreement with the CATV CTB specification within 3dB margin. The results can be used to predict IMD3 induced CIR performance for various analog optical transmission systems with given optical modulation index and the number of transmission channels.

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Four-bucket 알고리즘을 이용한 레이저 간섭계 (Multiphase Homodyne Laser Interferometer with Four Bucket)

  • 박윤창;정경민
    • 한국정밀공학회지
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    • 제16권10호
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    • pp.203-208
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    • 1999
  • By tilting the reference mirror of Twynman-Green interferometer having a reference mirror and a moving mirror, firinge pattern composed of bright and dark parallel lines can be obtained and the fringe pattern is shifted according to the displacement of the mowing mirror. Several studies are executed for displacement measurement by detecting the intensity of the fringe with photo-diodes having small detecting area. In this study, to improve the sensitivity and robustness, the intensity of fringe is detected by using a large-area quadratic photo-diode masked with a grating panel having four kinds of binary grating having phase-difference of 0, {\pi}$/4, {\pi}$/2, 3 {\pi}$/4. The phase of the fringe is calculated with a simple 4-buckets algorithm. A experimental result shows that standard deviation of 5.653 nm is obtained comparing with a capacitive type gap sensor having nearly 1 nm accuracy.

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레이저를 이용한 광학식 리니어 스케일의 분해능 향상에 관한 연구 (High resolution linear scale using collimated LASER)

  • 박윤창;정경민
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 1999년도 춘계학술대회 논문집
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    • pp.170-174
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    • 1999
  • The main scale of linear scale greatly affects on the precision of displacement measurement. Especially when needing the long range measurement, the length of main scale should be increased accordingly. In this paper, we propose a linear scale that uses laser interference pattern as main scale for long range measurement. The linear scale is similar to Michelson interferometer excepting that the reference mirror is tilted so as to obtain interference fringe pattern and a grating panel is attached on a quadratic photo diodes. Four kinds of grating having phase differences of 0, $\pi$ /4, $\pi$ /2, 3 $\pi$ /4 are arranged on the panel. The experimental results show that signals of - quadratic photo diode, A, B,$\overline{A}$ and $\overline{B}$ are cosine wavelike and successive signals have phase difference of $\pi$/4 each other. So the proposed method can achieve improved measurement resolution.

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결합 링 반사기 레이저 다이오드의 광대역 파장 가변 및 변조 특성 해석 (Wide Tuning and Modulation Characteristics Analysis of Coupled-Ring Reflector Laser Diode)

  • 윤필환;김수현;정영철
    • 한국광학회지
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    • 제17권6호
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    • pp.544-547
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    • 2006
  • 본 논문에서는 기존의 DBR 격자 기반의 파장선택성 반사기를 대체시킬 수 있는 결합 링 반사기가 집적된 레이저 다이오드를 연산자 분리 시 영역 모델을 통해서 분석한다. 결합 링 반사기는 브래그 격자(Bragg grating) 필요로 하지 않는 평판 도파로 형태의 반사기이다. 결합 링 반사기는 하나의 직선 도파로와 두 개의 결합된 형태의 링 공진기가 하나의 직선 도파로에 결합되어 있다. 위상 조절 전류의 조절에 따른 파장 가변 범위는 수십 nm 정도가 되고, 파장 가변 과정에서 부모드 억압비도 35 dB 이상이 됨을 수치 해석을 통해 확인했다. 또한 결합 링 반사기 레이저 다이오드는 종래의 레이저 다이오드에 비해서 유효 공진기 길이(Effective Cavity Length)가 매우 길기 때문에 진폭 변조 시 20-30 GHz 주파수 영역에서 추가적인 공진 특성을 보이고, 이 특성으로 인해 진폭 변조 대역폭이 상당히 향상될 수 있으리라 기대된다.

높은 광출력을 갖는 Laser Diode Bar의 열응력 개선: 마이크로-홈 도입을 통한 응력 분포 변화 분석 (Thermal Stress Relief through Introduction of a Microtrench Structure for a High-power-laser-diode Bar)

  • 정지훈;이동진;오범환
    • 한국광학회지
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    • 제32권5호
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    • pp.230-234
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    • 2021
  • 열응력 완화 기술은 고출력 레이저 다이오드의 빔의 품질과 안정성을 향상시키기 위한 주요 요소기술로 큰 주목을 받고 있다. 본 연구에서는 레이저 다이오드 바(LD-bar) chip-on-submount (CoS)에 발생하는 열응력 분포 양상을 SolidWorks 소프트웨어를 사용하여 해석하고, 마이크로-홈 구조 도입에 따라 열응력 완화에 미치는 영향을 체계적으로 분석한다. 마이크로-홈 구조는 누적응력을 차단하는 효과가 있는 반면, 열흐름을 방해하는 역기능도 있으므로, 시스템 구조와 방열금속판 두께에 따라 홈 깊이를 최적화할 필요가 있다. 간단히 도입된 예시구조에 대하여, LD-bar CoS의 칩 홀더 금속판에 도입하는 마이크로-홈 구조 최적화를 통해 칩 전면부 표면 응력을 마이크로-홈 구조가 없는 경우의 약 1/5 정도로 낮추었다. 향후 초고출력 시스템에서 방열을 위한 열저항과 광출력 빔크기를 최소한으로 유지하면서, 열응력을 효과적으로 완화시키는 구조로 활용이 기대된다.

Display 특성 향상을 위한 MLA 광소자 개발 연구

  • 정한욱;김광열;이공수;신성욱;박홍진;최병덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.199-199
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    • 2009
  • Recently, polymeric microlens arrays have become important elements in many applications. Microlens arrays have been used to enhance luminance efficiency and luminance power efficiency of light-emitting diodes (LEDs) and organic LEDs. Many processes for fabrication of microlens array are studied. Though the MLA has been fabricated by electroformed mold, LIGA process and reflow method, these methods were required masks, multiple process steps and post processing. In this paper, we proposed rapid and direct UV laser direct fabrication process using colorless liquid photopolymer, NOA60 for polarization activated microlens. The microlens arrays are formed on the NOA60 on glass, after the focused laser energy was irradiated to the material. The diameter of MLA was varied from 42 to 88 ${\mu}m$, and the height from 0.9 to 1.6 ${\mu}m$. The MLA fabricated using NOA60 shows more then 85% transmittance as well as good hardness for optical module.

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고출력 응용을 위한 $1.3\;{\mu}m$ InAs/GaAs 양자점 레이저 다이오드의 특성 연구 (Characteristics of $1.3\;{\mu}m$ InAs/GaAs Quantum Dot Laser Diode for High-Power Applications)

  • 김경찬;유영채;이정일;한일기;김태근
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.477-478
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    • 2006
  • Characteristics of InAs/GaAs quantum dot (QD) ridge laser diodes (LDs) are investigated for high-power $1.3\;{\mu}m$ applications. For QD ridge LDs with a $5-{\mu}m$-wide stripe and a 1-mm-long cavity, the emission wavelength of 1284.1 nm, the single-uncoated-facet CW output power as high as 90 mW, the external efficiency of 0.31 W/A and the threshold current density of $800\;mA/cm^2$ are obtained. The linewidth enhancement factor ($\alpha$-factor) is successfully measured to be between 0.4 and 0.6, which are about four times as small values with respect to conventional quantum well structure. It is possible that this result significantly reduce the filamentation of far-field profiles resulting in better beam quality for high power operation.

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WDM-PON 시스템을 위한 저가격 상호 주입 잠김 F-P LD (Cost Effective Mutual Injection Locked F-P LD for WDM-PON System)

  • 황지홍;이혁재;박준모
    • 융합신호처리학회논문지
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    • 제21권4호
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    • pp.162-169
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    • 2020
  • 본 논문에서는 엄밀한 수학 없이 상호 주임 잠김에 대한 정성적 이해를 시도하였고, 제안하는 상호 주입 잠김 광원에 대해 분석한다. 또한 두 개의 unpolarized Fabry-Perot Laser Diode (F-P LD)를 이용한 상호 주입 잠김 기반의 Wavelength Division Multiplexing - Passive Optical Network (WDM-PON)용 저가격 광원을 구현하였다. 한 쪽 F-P LD의 파장 변화에 대한 RIN (Relative Intensity Noise) 특성을 측정하였는데, 가변 파장의 범위가 2.07 nm일 때 최소 -110 dB/Hz의 RIN을 보여주었다.

3.2-kW 9.7-GHz Polarization-maintaining Narrow-linewidth All-fiber Amplifier

  • Hang Liu;Yujun Feng;Xiaobo Yang;Yao Wang;Hongming Yu;Jue Wang;Wanjing Peng;Yanshan Wang;Yinhong Sun;Yi Ma;Qingsong Gao;Chun Tang
    • Current Optics and Photonics
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    • 제8권1호
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    • pp.65-71
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    • 2024
  • We present a Yb-doped narrow-linewidth polarization-maintaining all-fiber amplifier that achieves a high mode-instability (MI) threshold, high output power, and 9.7-GHz spectral linewidth. Six wavelength-multiplexed laser diodes are used to pump this amplifier. First, we construct a high-power fiber amplifier based on a master oscillator-power amplifier configuration for experiments. Subsequently, we examine the MI threshold by individually pumping the amplifier with wavelengths of 976, 974, 981, 974, and 981 nm respectively. The experimental results demonstrate that the amplifier exhibits a high MI threshold (>3.5 kW) when pumped with a combination of wavelengths at 974 and 981 nm. Afterward, we inject an optimized phase-modulated seed with a nearly flat-top spectrum into this amplifier. Ultimately, laser output of 3.2 kW and 9.7 GHz are obtained.

Effects of Doping in Organic Electroluminescent Devices Doped with a Fluorescent Dye

  • Kang, Gi-Wook;Ahn, Young-Joo;Lee, Chang-Hee
    • Journal of Information Display
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    • 제2권3호
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    • pp.1-5
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    • 2001
  • The effect of doping on the energy transfer and charge carrier trapping processes has been studied in organic light-emitting diodes (OLEDs) doped with a fluorescent laser dye. The devices consisted of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD) as a hole transporting layer, tris(8-hydroxyquinoline) aluminum ($Alq_3$) as the host, and a fluorescent dye, 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[i,j]quinolizin-8-yl) vinyl]-4H-pyran) (DCM2) as the dopant. Temperature dependence of the current-voltage-luminescence (I-V-L) characteristics, the electroluminescence (EL) and photoluminescence (PL) spectra are studied in the temperature ranging between 15 K and 300 K. The emission from DCM2 was seen to be much stronger compared with the emission from $Alq_3$, indicative of efficient energy transfer from $Alq_3$ to DCM2. In addition, the EL emission from DCM2 increasd with increasing temperature while the emission from the host $Alq_3$ decreased. The result indicates that direct charge carrier trapping becomes efficient with increasing temperature. The EL emission from DCM2 shows a slightly sublinear dependence on the current density, implying the enhanced quenching of excitons at high current densities due to the exciton-exciton annihilation.

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