• 한국레이저가공학회지
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• 제2권1호
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• pp.30-37
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• 1999

Laser-welded Tailored Blank is the hottest thing in many automobile companies. But they demand on weld quality, reproducibility, and formability. So it is the great problem of automation of laser welding process. Therefore, it is requested to construct on-line process monitoring system on high accuracy. The light which is emitted from plasma and spatter in laser welding was detected by photo-diodes. It was found that the light intensity depends on welding speed. laser power, and flow rate of assist gas. The relationship between the plasma and spatter and the weld quality can be used for on-line laser weld monitoring systems.

• 전자공학회논문지A
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• 제32A권12호
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• pp.91-100
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• 1995

This paper represents the lateral first-order mode characteristics for the semiconductor laser diodes using a two-dimensional numerical simulator. In order to analyze the lateral first-order mode characteristics, Helmholtz wave equation is solved twice for the lateral fundamental and the first-order mode considering the mode gain, total losses, and the recombination rate due to the stimulated emission radiation for the each mode independantly. Through this procedure, we find that the lateral first-order mode was easily guided as increasing the stripe width for the index-guiding structures, and that the lateral first-order mode seems to be dominated in the distribution of total light intensity when its output power reaches nearly half of that of the lateral fundamental mode. This results may be used to design the device structure which guides only the lateral fundamental mode.

• Journal of the Optical Society of Korea
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• 제9권2호
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• pp.45-48
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• 2005

We investigate effects of the injected ASE (Amplified spontaneous emission) bandwidth on the performance of the wavelength-locked Fabry-Perot laser diodes (F-P LDs) under constant injection power density and constant injection power. For the constant injection power density, we can determine the minimum injection bandwidth by the required intensity noise or the bit-error rate (BER) performance. On the other hand, there exists the optimal ASE bandwidth for the constant injection power to minimize the intensity noise.

• Journal of the Optical Society of Korea
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• 제16권2호
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• pp.101-106
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• 2012

We demonstrate a cost effective broadcast signal transmission at 1.25-Gb/s with 100 GHz channel spacing based on a broadband light source (BLS) for a wavelength division multiplexing-passive optical network (WDM-PON). The BLS is implemented by using mutually injected Fabry-Perot laser diodes (MI F-P LDs). The error-free transmission without a forward error correction (FEC) is achieved by its low relative intensity noise (RIN). The number of usable modes is determined by RIN and/or extinction ratio (ER) in the spectrum sliced light output.

• 한국결정성장학회지
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• 제12권1호
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• pp.11-20
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• 2002

The world at the end of the $20^{th}$ Century has become "blue" Indeed, this past decade has witnessed a "blue rush" towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide bandgap III-Nitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very end of this decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of-the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.

• 한국레이저가공학회지
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• 제3권2호
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• pp.53-61
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• 2000

On the laser weld production line, a slight alteration of the welding condition produces many defects. The defects are monitored in real time, in order to prevent continuous occurrence of defects, reduce the loss of material, and guarantee good quality. The measurement system is produced by using three photo-diodes for detection of the plasma and spatter signal in CO$_2$ laser welding. For high speed CO$_2$ laser welding, laser tailored welded blanks for example, on-line weld quality monitoring system was developed by using fuzzy multi-feature pattern recognition. Weld qualities were classified optimal heat input, a little low heat input, low heat input, and focus misalignment, and final weld quality were classified good and bad.

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
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• pp.8-9
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• 2002

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• 한국광학회지
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• 제23권1호
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• pp.42-51
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• 2012

본 논문에서는 패브리 페롯 레이저 다이오드(FP-LD : Fabry-Perot LD)에서 활성층 구조에 따른 주입 잠금 특성을 비교하였다. 편광 및 무편광 다중양자우물 구조와 무편광 벌크 구조의 이득 스펙트럼 및 주입 캐리어 밀도에 따른 최대 이득 특성을 TE, TM 편광에 대하여 계산하였다. 계산된 이득 파라미터를 시영역 대신호 모델에 적용하여 FP-LD의 주입 잠금 특성을 확인한 결과, 무편광 FP-LD가 편광 FP-LD 에 비하여 RIN(Relative Intensity Noise) 특성 면에서 약 3 dB 정도 우수하고, 2.5 Gbps 변조시에 아이 특성이 훨씬 우수함을 알 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.96-99
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• 2005

As the demand of internet networks using backbone communication systems recently increased, the researches on the high-speed wideband optical communication systems are required. For high-speed optical communication systems, asymmetric sampled grating distributed feedback laser diodes (DFB-LDs) are developed and the reliability of DFB-LDs is examined. The reliability of DFB-LDs is performed by monitoring I-V and L-I characteristics and two degradation phenomena related to the electrical characteristics of LDs are observed during the life tests. The first degradation phenomenon by increasing the reverse current is considered as a formation of leakage current path enough to prevent lasing operation in lateral blocking layer near active region of lasers. The second degradation phenomenon by decreasing the forward current is considered as activation of non-radiative Auger recombination process by thermal energy and the second degradation phenomenon is recovered after the off-test period at room temperature Eventually, evaluating the reliability of DFB LDs can allow us to improved the manufacturability in high-volume manufacturing.