• 전자공학회논문지A
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• 제32A권11호
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• pp.17-28
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• 1995

In this paper, we developed a two-dimensional numerical simulator which could analyze the stripe geometry semiconductor laser diodes by modifying the commercial semiconductor device simulator, MEDICI. In order to study the characteristics of semiconductor laser diodes, it is necessary to solve the Helmholtz wave equation and photon rate equation in addition to the basic semiconductor equations. Also the recombination rates due to the spontaneous and the stimulated emissions should be included, which are very important recombination mechanisms in semiconductor laser diodes. Therefore, we included the solution routines which analyzed the Helmholtz wave equation and the photon rate equation and two important recombination rates to simulate the semiconductor laser diodes. Then we simulated the gain-guiding and index-guiding DH(Double Heterostructure) semiconductor laser diodes to verify the validity of the implemented functions. The results obtained from simulation are well consistent with the previously published ones. This allows us to know the operating characteristics of DH laser diodes and is expected to use as a tool for optimum design.

• 조명전기설비학회논문지
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• 제19권1호
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• pp.9-14
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• 2005

Fabry-Perot 레이저 다이오드의 missing mode의 원인으로 의심되는 활성층 내의 구조적 결함과 리플의 영향을 TDLM(time domain laser model)방식을 사용하여 모델링하였다. 보다 정확한 모델링의 결과를 얻기 위하여 여러가지 비선형 효과를 추가 고려하였다. 이를 이용하여 레이저 다이오드를 시뮬레이션하였고, 모드 스펙트럼(mode spectrum)을 구하였다. 실제 레이저 다이오드의 missing mode를 측정하기 위한 실험 장비를 구성하여 측정 결과를 추출하였고, 시뮬레이션과 측정 실험 결과로부터 결론을 내렸다.

• 한국광학회지
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• 제13권4호
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• pp.319-323
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• 2002

Linewidth enhancement factor ($\alpha{-factor}$) 값이 2와 4인 두 종류의 1.55${\mu}m$ 다층양자우물(Multi-Quantum Well; MQW) 대면적 레이저 다이오드를 제작하였다. 제작된 레이저 다이오드의 far-field 측정 결과 $\alpha{-factor}$ 값이 4일 때 보다 2인 구조에서 반폭치(Full Width at Half Maximum; FWHM)와 필라멘테이션(filamentation)이 감소되었다. 주입전류의 증가에 따라 두 종류 모두 far-field의 FWHM의 증가 현상이 나타났고 이는 filament spacing이 감소하였기 때문으로 설명된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

• 전자공학회논문지A
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• 제32A권11호
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• pp.29-34
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• 1995

Mirror coating is applied to laser facets to improve properties of edge emitting laser diodes. In this experiment, InGaAsP/GaAs high power laser diodes were studied with respect to different degrees of anti-reflective coating. Sputterred $Al_{2}$O$_{3}$ was used as the coating material and the HR coating was kept constant at 90%. Threshold current density, differential quantum efficiency, emission wavelength and the operating current at 500mW were measured for a range of AR coating and compared with theoretically calculated values; that showed good agreements. Precise wavelength control is important for laser diodes for solid state pumping because of small absorption bandwidth. In addition, since these lasers operate under CW condition, a lowest possible operating current for a given power is desired in order to minimize the heat produced. From the results of this experiment, we were able to obtain a optimum range of AR coatings for minimum operating current. The wavelength can be varied up to 4nm within this range.

• 전자공학회논문지A
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• 제28A권10호
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• pp.830-839
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• 1991

The correlation between electrical (derivativer) characteristics and electro-optical conversion characteristics of laser diodes has been investigated both theoretically and experimentally with emphasis on the nonideal behavior. Laser diodes are electrically pumped devices with the current resulting from the carrier recombination dynamics, and their junction voltage is given by the separation of the quasi-Fermi levels which are determined by the injected carrier concentration. Thus most of the informaiton related to laser diode operation characteristics is reveraled in the electrical characteristics which are relatively simple to measure with sufficient accuracy. Therefore the measurement of electrical characteristics and their derivatives is a very useful tool of laser diode characteristion.

• E2M - 전기 전자와 첨단 소재
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• 제11권11호
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• pp.28-36
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• 1998

Widely tunable diodes integrated with periodically sampled and chirped DBR(distributed Bragg reflector) and an EA(electroabsorption) modulator are analyzed dynamically using the improved largesinal time-domain model. The tuning characteristics of sampled- and chirped-grating DBR laser diodes are demonstrated theoretically. The results of the simulation agree well with those of the experiment. And the intensity-modulation properties of the laser diodes integrated with an EA modulator are calculated. It is shown that the external modulation has the lower frequency chirp by 1/20 for the same extinction ratio than the direct modulation, and also the short pulse train can be generated using the optical gating of an EA modulator.

• 전자공학회논문지A
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• 제30A권7호
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• pp.38-46
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• 1993

Based on the close correlation between the optoelectronic and electrical characteristics of laser diodes, this paper is to present an exact model for electrical characteristics of laser diodes with bulk active layers so that the optoelectronic characteristics may be estimated from the electrical Characteristics. Among the considered models, the most exact model is shown to be one which uses the Fermi-Dirac integral and the bimolecular recombination and takes into account the energy-gap shrinkage with the injected carrier density.

• 한국진공학회지
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• 제17권6호
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• pp.555-559
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• 2008

순방향 전압-온도 (forward voltage-temperature)법을 이용하여 양자점 레이저 다이오드의 접합온도를 측정하였다. 식각 깊이가 깊은 mesa 구조의 경우 입력전류에 대한 접합온도의 증가율은 0.05 K/mA인 반면, 식각 깊이가 낮은 mesa 구조의 경우 0.07 K/mA로서 상대적으로 높게 측정되었다. 깊은 mesa 구조에서의 상대적으로 낮은 접합온도 증가율은 mesa 측면 방향으로의 열확산 효과 때문인 것으로 설명된다.

• 한국광학회:학술대회논문집
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• 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.69-72
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• 1990

For the effective heat transfering in Lser Diodes, Beam-Lead structure were introduced which is applicable to hybrid Optoelectronic Integrated Circuits. A 5-layer planar structure Laser Diode is fabricated and Beam-Lead is made by Au plating. And carrier was made by etching Si substrate and LD was mounted on a carrier. The thermal resistance was measured and we could certain that Beam-Lead structure behaves well as a heat sink.