• Proceedings of the KIEE Conference
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• 2005.10b
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• pp.475-477
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• 2005

We simulated 3rd order intermodulation distortion (IMD3) induced Carrier-to-Intermodulation Ratio (CIR) of laser diodes over a wide range of optical modulation index, and compared the results with commercial IMD3 induced CIR specification such as Composite Triple Beat (CTB) of DFB laser transmitter for CATV networks. It shows that the simulation results are in good agreement with the CATV CTB specification within 3dB margin. The results can be used to predict IMD3 induced CIR performance for various analog optical transmission systems with given optical modulation index and the number of transmission channels.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.10
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• pp.203-208
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• 1999

By tilting the reference mirror of Twynman-Green interferometer having a reference mirror and a moving mirror, firinge pattern composed of bright and dark parallel lines can be obtained and the fringe pattern is shifted according to the displacement of the mowing mirror. Several studies are executed for displacement measurement by detecting the intensity of the fringe with photo-diodes having small detecting area. In this study, to improve the sensitivity and robustness, the intensity of fringe is detected by using a large-area quadratic photo-diode masked with a grating panel having four kinds of binary grating having phase-difference of 0, {\pi}$/4, {\pi}$/2, 3 {\pi}$/4. The phase of the fringe is calculated with a simple 4-buckets algorithm. A experimental result shows that standard deviation of 5.653 nm is obtained comparing with a capacitive type gap sensor having nearly 1 nm accuracy.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.05a
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• pp.170-174
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• 1999

The main scale of linear scale greatly affects on the precision of displacement measurement. Especially when needing the long range measurement, the length of main scale should be increased accordingly. In this paper, we propose a linear scale that uses laser interference pattern as main scale for long range measurement. The linear scale is similar to Michelson interferometer excepting that the reference mirror is tilted so as to obtain interference fringe pattern and a grating panel is attached on a quadratic photo diodes. Four kinds of grating having phase differences of 0, $\pi$ /4, $\pi$ /2, 3 $\pi$ /4 are arranged on the panel. The experimental results show that signals of - quadratic photo diode, A, B,$\overline{A}$ and $\overline{B}$ are cosine wavelike and successive signals have phase difference of $\pi$/4 each other. So the proposed method can achieve improved measurement resolution.

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.544-547
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• 2006

A time-domain modeling approach is used to study characteristics of a widely tunable coupled-ring reflector (CRR) laser diode(LD). The CRR consists of a bus waveguide and two coupled ring resonators coupled to the bus without resorting to distributed Bragg grating structure. The tuning range can be a few tens of nanometers with a side mode suppression ratio exceeding 35dB through the adjustment of currents into the phase control sections in the rings. The CRR laser diode has long effective cavity length compared to conventional laser diodes. Accordingly, a broad additional resonance peak in the amplitude modulation characteristics is observed between 20 to 30 GHz, implying the extension of amplitude modulation bandwidth.

• Korean Journal of Optics and Photonics
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• v.32 no.5
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• pp.230-234
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• 2021

Relief of thermal stress has received great attention, to improve the beam quality and stability of high-power laser diodes. In this paper, we investigate a microtrench structure engraved around a laser-diode chip-on-submount (CoS) to relieve the thermal stress on a laser-diode bar (LD-bar), using the SolidWorks® software. First, we systematically analyze the thermal stress on the LD-bar CoS with a metal heat-sink holder, and then derive an optimal design for thermal stress relief according to the change in microtrench depth. The thermal stress of the front part of the LD-bar CoS, which is the main cause of the "smile effect", is reduced to about 1/5 of that without the microtrench structure, while maintaining the thermal resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.199-199
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• 2009

Recently, polymeric microlens arrays have become important elements in many applications. Microlens arrays have been used to enhance luminance efficiency and luminance power efficiency of light-emitting diodes (LEDs) and organic LEDs. Many processes for fabrication of microlens array are studied. Though the MLA has been fabricated by electroformed mold, LIGA process and reflow method, these methods were required masks, multiple process steps and post processing. In this paper, we proposed rapid and direct UV laser direct fabrication process using colorless liquid photopolymer, NOA60 for polarization activated microlens. The microlens arrays are formed on the NOA60 on glass, after the focused laser energy was irradiated to the material. The diameter of MLA was varied from 42 to 88 ${\mu}m$, and the height from 0.9 to 1.6 ${\mu}m$. The MLA fabricated using NOA60 shows more then 85% transmittance as well as good hardness for optical module.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.477-478
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• 2006

Characteristics of InAs/GaAs quantum dot (QD) ridge laser diodes (LDs) are investigated for high-power $1.3\;{\mu}m$ applications. For QD ridge LDs with a $5-{\mu}m$-wide stripe and a 1-mm-long cavity, the emission wavelength of 1284.1 nm, the single-uncoated-facet CW output power as high as 90 mW, the external efficiency of 0.31 W/A and the threshold current density of $800\;mA/cm^2$ are obtained. The linewidth enhancement factor ($\alpha$-factor) is successfully measured to be between 0.4 and 0.6, which are about four times as small values with respect to conventional quantum well structure. It is possible that this result significantly reduce the filamentation of far-field profiles resulting in better beam quality for high power operation.

• Journal of the Institute of Convergence Signal Processing
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• v.21 no.4
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• pp.162-169
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• 2020

In this paper, we attempted a qualitative understanding of mutual injection locking without rigorous mathematics, and analyzed the proposed mutual injection locked light source. Also, a low-cost WDM-PON light source based on mutual injection locking using two unpolarized Fabry-Perot Laser Diodes (F-P LDs), was implemented. The RIN (Relative Intensity Noise) characteristic for the wavelength change of the F-P LD was measured, and when the variable wavelength range was 2.07 nm, it showed a RIN of at least -110 dB/Hz.

• Current Optics and Photonics
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• v.8 no.1
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• pp.65-71
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• 2024

We present a Yb-doped narrow-linewidth polarization-maintaining all-fiber amplifier that achieves a high mode-instability (MI) threshold, high output power, and 9.7-GHz spectral linewidth. Six wavelength-multiplexed laser diodes are used to pump this amplifier. First, we construct a high-power fiber amplifier based on a master oscillator-power amplifier configuration for experiments. Subsequently, we examine the MI threshold by individually pumping the amplifier with wavelengths of 976, 974, 981, 974, and 981 nm respectively. The experimental results demonstrate that the amplifier exhibits a high MI threshold (>3.5 kW) when pumped with a combination of wavelengths at 974 and 981 nm. Afterward, we inject an optimized phase-modulated seed with a nearly flat-top spectrum into this amplifier. Ultimately, laser output of 3.2 kW and 9.7 GHz are obtained.

• Journal of Information Display
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• v.2 no.3
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• pp.1-5
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• 2001

The effect of doping on the energy transfer and charge carrier trapping processes has been studied in organic light-emitting diodes (OLEDs) doped with a fluorescent laser dye. The devices consisted of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD) as a hole transporting layer, tris(8-hydroxyquinoline) aluminum ($Alq_3$) as the host, and a fluorescent dye, 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[i,j]quinolizin-8-yl) vinyl]-4H-pyran) (DCM2) as the dopant. Temperature dependence of the current-voltage-luminescence (I-V-L) characteristics, the electroluminescence (EL) and photoluminescence (PL) spectra are studied in the temperature ranging between 15 K and 300 K. The emission from DCM2 was seen to be much stronger compared with the emission from $Alq_3$, indicative of efficient energy transfer from $Alq_3$ to DCM2. In addition, the EL emission from DCM2 increasd with increasing temperature while the emission from the host $Alq_3$ decreased. The result indicates that direct charge carrier trapping becomes efficient with increasing temperature. The EL emission from DCM2 shows a slightly sublinear dependence on the current density, implying the enhanced quenching of excitons at high current densities due to the exciton-exciton annihilation.