• Bulletin of the Korean Chemical Society
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• v.25 no.12
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• pp.1859-1862
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• 2004

Europium doped yttrium vanadate ($YVO_4$:Eu) phosphor thin films were grown using a pulsed laser deposition (PLD) technique on silicon substrate. The structural characterization carried out on a series of ($YVO_4$:Eu films at post annealing temperature in the range of 550 $^{\circ}C$-1150 $^{\circ}C$ indicating that films were preferentially (200) oriented at post annealing temperature above 950 $^{\circ}C.$ Photoluminescence of thin film increased with the increase of post annealing temperature and ambient oxygen pressure though the thin film has the powder-like surface morphology at oxygen pressure above 200 mTorr. Photoluminescence decay from $^5D_1$ level of $Eu^{3+}$ show the great concentration dependency, which can be used as a good parameter to control the composition of ($YVO_4$:Eu thin film.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.236-239
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• 2002

Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.95-98
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• 1999

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films at an oxygen pressure of 350 mTorr, the experiment has been Performed at various substrate temperatures in the range of 20$0^{\circ}C$ to $700^{\circ}C$. According to XRD, (002) textured ZnO films of high crystalline quality have been obtained and the intensity of UV emission was the highest at 40$0^{\circ}C$ substrate temperature.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.28-33
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• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.12
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• pp.1265-1271
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• 2013

In this work, modeling and analysis of thermal effects laser drilling under water for ceramics were presented. Laser is a unique tool for machining ceramics due to the characteristic of non-contact material removal. However, ablation by a laser often induces a thermal effect on the material and an increased heat-affected-zone or deposition of debris can be observed on the machined parts. The underwater surrounding improved a heat transfer rate to cooling down the machined part and could prevent any deposition of debris near the machined surfaces and edges. The heat modeling was applied to obtain the temperature distributions as well as temperature gradients between the material and surroundings. The cooling effect of the underwater laser drilling was improved and a more stable temperature distribution was calculated. The actual laser drilling results of ceramic laser drilling were presented to verify the effects of underwater laser drilling.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.231-233
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• 1993

This paper proposes a new $SiO_2$ film condenser fabrication technique by photo-chemically deposited $SiO_2$ films by Laser CVD. Laser CVD is noticeable that film deposition can be done at low temperature below $300^{\circ}C$ with less damage. After film deposition, the characteristics of Laser CVD $SiO_2$ films and $SiO_2$ film condenser is evaluated.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.670-673
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• 2003

Fabrication of three dimensional microstructures by laser-assisted chemical vapor deposition of material is investigated. To fabricate microstructures, a thin layer of deposit in desired patterns is first written using laser direct writing technique and on top of this layer a second layer is deposited to provide the third dimension normal to the surface. By depositing many layers. a three dimensional microstructure is fabricated. Optimum deposition conditions for direct writing of initial and subsequent layers with good surface quality and profile uniformity are determined. Using an arson ion laser and ethylene as the light source and reaction gas, respectively, fabrication of three-dimensional carbon microstructures is demonstrated.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.763-766
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• 2000

The Rapid Prototyping and Tooling technology has been developed. However, most commercial ones currently use resins or waxes as the raw materials. These days. the direct metal deposition methods are researched as a true rapid prototyping and tooling technology. A fundamental study on rapid prototyping and tooling with wire welding technology using $CO_2$ laser radiation was carried out in this paper. The main focus is to develop a simple commercial rapid prototyping and tooling system with the exiting laser welding technology. The process is investigated as a function of laser parameters and process variables. Basic parts were fabricated as out-put and their microstructure, hardness and tensile strength are examined for the reliability. In addition, Its advantages and disadvantages are discussed as a rapid prototyping and tooling system.

• Laser Solutions
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• v.13 no.1
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• pp.6-10
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• 2010

Crystallization of 100 nm thick amorphous silicon (a-Si) films on glass substrates was carried out by using a double laser irradiation method. Depending on a-Si deposition method or glass types, the quality of crystallized silicon film varies significantly. For a-Si films deposited with high concentration of impurities, large grains or high crystallinity can not be achieved. Crystallization with different a-Si deposition methods confirmed that for the polycrystallization of a-Si films on glass substrates, controlling the impurity density during substrate preparation is critical.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.266-267
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• 2007

$Ba_{0.5}Sr_{0.5}TiO_3$(BST) films with different deposition temperatures were deposited on $Al_2O_3$ substrate by Nd:YAG Pulsed Laser Deposition(PLD). The deposition conditions to achieve high crystal structures and dielectric properties were optimized for both techniques. The structural characterization on the BST thin films was performed by X-Ray Diffraction(XRD) and Atomic Force Microscopy (AFM). Effects of post-deposition annealing of BST films were investigated. The best dielectric properties were obtained on $800^{\circ}C$ deposited BST film with post-deposition annealing at $1100^{\circ}C$ in flowing $O_2$ atmosphere for 2hours.