• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.05a
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• pp.101-103
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• 2022

CCTV is mainly used as a real-time detection system for critical facilities. In the case of CCTV, although the accuracy is high, the viewing angle is narrow, so it is used in combination with a sensor such as a radar. LiDAR is a technology that acquires distance information by detecting the time it takes to reflect off an object using a high-power pulsed laser. In the case of lidar, there is a problem in that the utilization is not high in terms of cost and technology due to the limitation of the number of simultaneous processing sensors in the server due to the data throughput. The detection method by the optical mesh sensor is also vulnerable to strong winds and extreme cold, and there is a problem of maintenance due to damage to animals. In this paper, by using the 1550nm wavelength band instead of the 905nm wavelength band used in the existing lidar sensor, the effect on the weather environment is strong and we propose to develop a system that can integrate and control multiple sensors.

• Journal of Powder Materials
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• v.31 no.3
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• pp.220-225
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• 2024

Molten salt reactors represent a promising advancement in nuclear technology due to their potential for enhanced safety, higher efficiency, and reduced nuclear waste. However, the development of structural materials that can survive under severe corrosion environments is crucial. In the present work, pure Ni was deposited on the surface of 316H stainless steel using a directed energy deposition (DED) process. This study aimed to fabricate pure Ni alloy layers on an STS316H alloy substrate. It was observed that low laser power during the deposition of pure Ni on the STS316H substrate could induce stacking defects such as surface irregularities and internal voids, which were confirmed through photographic and SEM analyses. Additionally, the diffusion of Fe and Cr elements from the STS316H substrate into the Ni layers was observed to decrease with increasing Ni deposition height. Analysis of the composition of Cr and Fe components within the Ni deposition structures allows for the prediction of properties such as the corrosion resistance of Ni.

• Journal of Ginseng Research
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• v.24 no.3
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• pp.107-112
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• 2000

One of the physiologically important ginseng diseases is red-colored phenomena (RCP) that is caused by accumulation of red-colored substances on the epidermis of ginseng roots. Although RCP severely deteriorates the quality of ginseng products, there has been little information on what red-colored substance is and how RCP occurs. Therefore, the heavy losses of cultivators and ginseng industry are suffering by RCP, For this reason, we have investigated with the morphochernical characteristics of RCP to find out main cause of it. The red-colored substances (RS) on the epidermis of red-colored ginseng (RCG) were examined using inverted light microscope, confocal laser scanning microscope (CLSM)and furier transform infrared (FT/IR) spectrometer. Red brown substances were accumulated in the cell wall of the epidermis from early stage to late stage of RCC. Especially, cell wall of the late stage of RCG was covered with the sub-stances with 80~ 130 fm thick. Therefore, the cell wall of RCG cannot protect the ginseng root cells from the mechanical damages, bacteria and fungi. To analyse red substances of roots, RS were isolated from epidermis of RCG and extracted using various solvents. RS is strongly insoluble but it was bleached by oxidizing agents including 12% (v/v) NaOCl. Therefore, RS was Presumed to make up of high chelation power. The proriles of FT/IR spectra or both healthy ginseng (HEG) and RCG showed a significant difference at two wavelength,2857 cm$\^$-1/(C-H) and 1032 cm$\^$-1/(S=O), respectively. Furthermore, absorption peak of 2857cm$\^$-l/ appears on the only epidermis of RCG. The other peak is shown lower absorption rate on the epidermis of RCG than that of healthy ginseng. Also, FT/IR spectra of the mixture of carboxym-ethylcellulose (CMC) and iron (Fe$\^$3+/) were very similar to RCG spectrum profiles. One of a interesting fact is that the contents of phenolic compounds at the epidermis of healthy ginseng were highest. The results of these experiments sup-port the RCP was closely related with the chemical interaction between inorganic elements (Fe) of rhizosphere and organic matters (cellulose, cellobiose, cell sap, etc.) of ginseng roots.

• Journal of Institute of Convergence Technology
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• v.6 no.2
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• pp.35-40
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• 2016

Ignitor tip is a component of burner to start the burning process in power plant. This is used to ignite the coal to a constant operating state by fuel mixed with air and kerosene. This component is composed of three components so that air and kerosene are mixed in the proper ratio and injected uniformly. Because the parts with the designed shape are manufactured in the machining process, they have to be made of three parts. These parts are designed to have various functions in each part. The mixing part mixes the supplied air and kerosene through the six holes and sends it to the injecting part at the proper ratio. The inject part injects mixed fuel, which is led to have a constant rotational direction in the connecting part, to the burner. And the connecting plate that the mixed fuel could rotate and spray is assembled so that the flame can be injected uniformly. But this part causes problems that are worn by vibration and rotation because it is mechanically assembled between the mixing part and the inject part. In this study, 3D printing method is used to integrate a connecting plate and an inject part to solve this wear problem. The 3D printing method could make this integrated part because the process is carried out layer by layer using a metal powder material. The part manufactured by 3D printing process should perform the post process such as support removal and surface treatment. However, while performing the 3D printing process, the material properties of the metal powders are changed by the laser sintering process. This change in material properties makes the post process difficult. In consideration of these variables, we have studied the optimization of manufacturing process using 3D printing method.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.74-79
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• 1994

The characteristics of the type I and type II SHG in LiB305 crystals grown by TSSG method have been investigated using 1064 nm beam from a Q-switched Nd:YAG laser. The measured phase matching angles and angular acceptance bandwidths were $\theta_m=90^{\circ}, \phi_m=11.6^{\circ}$, <$\delta\theta_{int}L_{1/2}=3.3^{\circ}-cm^{1/2}, \theta\phi_{int}L=0.27^{\circ}-cm^{1/2}$ for type I SHG and $\theta_m=20^{\circ}, \phi_m=90^{\circ}$, TEX>$\delta\theta_{int}L_=0.65^{\circ}-cm, \theta\phi_{int}L^{1/2}=3.5^{\circ}-cm^{1/2}$ for type II SHG, respectively. Thp. type I NCPM temperature of 1064 nm beam was found to be $149^{\circ}C$ with the temperature bandwidth $\DeltaTL$of $4.8^{\circ}C-cm$. An energy conversion efficiency of about 1.8% with 2.6 mm thick LBO crystal at an incident power of TEX>$171 MW/\textrm{cm}^2$ was demonstrated. The measured $d_{32} was 0.74\pm0.05 pm/V$..

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Korean Journal of Optics and Photonics
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• v.34 no.4
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• pp.139-150
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• 2023

Despite various light detection and ranging (LiDAR) architectures, it is very difficult to achieve long-range detection and high resolution in both vertical and horizontal directions with a wide field of view (FOV). The scanning architecture is advantageous for high-performance LiDAR that can attain long-range detection and high resolution for vertical and horizontal directions. However, a large-area photodetector (PD), which is disadvantageous for detection speed, is essentially required to secure the wide FOV. Thus we propose a PD based on the static unitary detector (STUD) technique that can operate multiple small-area PDs as a single large-area PD at a high speed. The InP/InGaAs STUD PIN-PD proposed in this paper is fabricated in various types, ranging from 1,256 ㎛×949 ㎛ using 32 small-area PDs of 1,256 ㎛×19 ㎛. In addition, we measure and analyze the noise and signal characteristics of the LiDAR receiving board, as well as the performance and sensitivity of various types of STUD PDs. Finally, the LiDAR receiving board utilizing the STUD PD is applied to a 3D scanning LiDAR prototype that uses a 1.5-㎛ master oscillator power amplifier laser. This LiDAR precisely detects long-range objects over 50 m away, and acquires high-resolution 3D images of 320 pixels×240 pixels with a diagonal FOV of 32.6 degrees simultaneously.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Economic and Environmental Geology
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• v.45 no.5
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• pp.487-502
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• 2012

This paper is focused on mineral compositions, microstructures and distributional characters of remained grains in the fault rocks collected from a fault developed in Yongdang-ri, Yangbuk-myeon, Gyeongju City, Korea, using X-ray diffraction (XRD), optical microscope, laser grain size analysis and fractal dimension analysis methods. The exposed fault core zone is about 1.5 meter thick. On the average, the breccia zone is 1.2 meter and the gouge zone is 20cm thick, respectively. XRD results show that the breccia zone consists predominantly of rock-forming minerals including quartz and feldspar, but the gouge zone consists of abundant clay minerals such as chlorite, illite and kaolinite. Mineral vein, pyrite and altered minerals commonly observed in the fault rock support evidence of fault activity associated with hydrothermal alteration. Fractal dimensions based on box counting, image analysis and laser particle analysis suggest that mineral grains in the fault rock underwent fracturing process as well as abrasion that gave rise to diminution of grains during the fault activity. Fractal dimensions(D-values) calculated by three methods gradually increase from the breccia zone to the gouge zone which has commonly high D-values. There are no noticeable changes in D-values in the gouge zone with trend being constant. It means that the bulk-crushing process of mineral grains in the breccia zone was predominant, whereas abrasion of mineral grains in the gouge zone took place by continuous fault activity. It means that the bulk-crushing process of mineral grains in the breccia zone was predominant, whereas abrasion of mineral grains in the gouge zone took place by continuous fault activity. Mineral compositions in the fault zone and peculiar trends in grain distribution indicate that multiple fault activity had a considerable influence on the evolution of fault zones, together with hydrothermal alteration. Meanwhile, fractal dimension values(D) in the fault rock should be used with caution because there is possibility that different values are unexpectedly obtained depending on the measurement methods available even in the same sample.