• ETRI Journal
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• v.45 no.1
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• pp.163-170
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• 2023

We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBRLD using a butt-joint coupling method. The fabricated chip shows a threshold current of approximately 8 mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively.

• Proceedings of the KSME Conference
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• 2001.06e
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• pp.733-737
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• 2001

Heat generated from the electronic parts in PDP is undesirable physical properties. To attain optimal arrangement of the electronic parts in PDP, thermal flows in PDP should be analyzed. PIV measurement has been made to quantify the characteristics of the inner flows and outer flows of an actual PDP. The quantity of heat flux from PDP has been estimated using the PIV results. Measurement system consists of Ar-ion laser, CCD camera and an image grabber installed on a host computer.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.242-243
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• 2002

From the dispersion relation of an electromagnetic (EM) wave propagating through plasmas, w$\^$2/ = w$\sub$p/$\^$2/＋c$\^$2/k$\^$2/ the phase velocity (w/k) of the wave is large at high density where w$\sub$p/ is large, and small at low density Therefore, when a laser pulse is located on a downward density gradient of a plasma wave, the phase velocity of the back of the pulse becomes faster than that of the front of the pulse and the pulse wavelength decreases. (omitted)

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2004.11a
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• pp.301-305
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• 2004

Effects of ion implantation on the adhesion strength of DLC film as a function of ion doses and implanted energies were investigated. Ti ions were implanted on the Si-wafer substrates followed by DLC coating using ion beam deposition method. Adhesion strength of DLC films were determined by scratch adhesion tester. Morphologies and compositional variations at the different ion energies and doses were observer by Laser Microscope and Auger Electron Spectroscopy, respectively. From results of scratch test, the adhesion strength of films was improved as increasing ion implanted energy, however there was no significant evidence with ion dose.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.859-862
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• 2003

Well-aligned multiwall carbon nanotubes (MWCNTs) were prepared at low temperature of 400 $^{\circ}C$ by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system. The MWCNTs were treated by an external rf plasma source and an ultra-violet laser in order to modify structural defect of carbon nanotube and to ablate possible contamination on carbon nanotube surface. Structural properties of carbon nanotubes were investigated by using a scanning electron microscopy (SEM), Raman spectroscopy, Fourier transformer Infrared spectroscopy (FTIR) and transmission electron microscope (TEM). In addition, the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future. Various post treatments were found to improve the field emission property of carbon nanotubes.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.12 no.1
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• pp.65-72
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• 2002

Generally, there are laser operating equipments( aligner, stepper) and electronic microscope( SEM, TEM) as a high precision manufacturing and inspection equipment in semiconductor production companies, precision examination and measuring laboratories. Mostly, these equipments are characterized by projection and target part. The relative displacements between projection and target part are dominant roles in vibrational problem in these precision equipments. These relative displacements are determined by the position of incoming vibration and the difference of vibration response in projection and target part. In this study, the allowable vibrational limits are suggested and the vibrational reduction plans are proposed by measurement and analysis of vibration phenomenon in the Clean Room in PDP(plasma display panel) production building. The vibration performance is evaluated by comparison relative displacements between projection and target part before/after the vibration isolation plan.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2000.11a
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• pp.209-213
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• 2000

In this paper, the removal rate of NO in a reactor is measured first using nonthermal plasma generated from a wire-cylinder type reactor, then the spatial density distribution of NO particles is investigated using ICCD(Intensified Charged Coupled Device) camera. This research uses nonthermal plasma from electrical discharge to analyze the NO characteristics, and the measurements of NO discharge image and Distribution are performed using the ICCD camera to examine the NO characteristics more closely. Furthermore, the method of Laser Induced Fluorescence (LIF) is used to analyze the particular behavior of NO particles more specifically, to suggest a method of reducing exhaust gas, a serious environmental problem.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.363-370
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• 1996

Carbon nitride is one of the new carbon materials which show interesting properties. After the theoretical calculation by LIu and Cohen, many researchers are trying to prepare $\beta$-$C_3N_4$ which may be harder than diamond. Many carbon nitride films synthesized till now by various methods are amorphous and the N/C ratios in the films are usually below 0.5. First we review shortly the synthesis of carbon nitride thin films by plasma, ion and laser processing. Second we report on the preparation of amorphous carbon nitride thin films by shielded arc ion plating and the structural and mechanical properties of the films.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.247.1-247.1
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• 2016

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.197.2-197.2
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• 2015

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, the ZnTe:O/CdS/ZnO structure was fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 4.5 J/cm2. The base pressure of the chamber was kept at a pressure of approximately $4{\times}10-7Torr$. ZnO thin film with thickness of 100 nm was grown on to ITO/glass, and then CdS and ZnTe:O thin film were grown on ZnO thin film. Thickness of CdS and ZnTe:O were 50 nm and 500 nm, respectively. During deposition of ZnTe:O films, O2 gas was introduced from 1 to 20 mTorr. For fabricating ZnTe:O/CdS/ZnO solar cells, Au metal was deposited on the ITO film and ZnTe:O by thermal evaporation method. From the fabricated ZnTe:O/CdS/ZnO solar cell, current-voltage characteristics was measured by using HP 4156-a semiconductor parameter analyzer. Finally, solar cell performance was measured using an Air Mass 1.5 Global (AM 1.5 G) solar simulator with an irradiation intensity of 100 mW cm-2.