• 한국재료학회지
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• 제17권7호
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• pp.352-357
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• 2007

Since a pattern defects "repair" system using a diode pumped solid state laser for Flat Panel Display (FPD) was suggested, a lot of laser systems have been explored and developed for mass-production microfabrication process. A maskless lithography system using 405 nm violet laser and Digital Micromirror Device (DMD) has been developed for PDP and Liquid Crystal Display (LCD) Thin Film Transistor (TFT) photolithography process. In addition, a "Laser Direct Patterning" system for Indium Tin Oxide (ITO) for Plasma Display Panel(PDP) has been evaluated one of the best successful examples for laser application system which is applied for mass-production lines. The "heat" and "solvent" free laser microfabrications process will be widely used because the next-generation flat panel displays, Flexible Display and Organic Light Emitting Diode (OLED) should use plastic substrates and organic materials which are very difficult to process using traditional fabrication methods.

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2005년도 추계학술발표대회 논문집
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• pp.132-136
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• 2005

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.511-514
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• 2000

This work aimed to develop ITO (Indium Tin Oxide) thin films ablation with a KrF Eximer laser required for the application in flat panel display, especially patterning into small geometry on a large substrate area. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/cm$^2$. And its value is much smaller than using third harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the damaged ITO is changed into dark brown and irradiated spot is completely isolated form the undamaged surroundings by laser light. The XPS analysis showed that the relative surface concentration of Sn and In were essentially unchanged (In :Sn=5:1) after irradiating Eximer laser. Using aluminium mask made by second harmonic Nd:YAG laser the ITO patterning is carried out.

• 한국생산제조학회지
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• 제24권1호
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• pp.94-97
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• 2015

In this study, we introduce a yellowing phenomenon in silver nanowire laser patterning and attempt to understand the cause of this phenomenon. Silver nanowire is a promising alternative to indium tin oxide as a transparent electrode owing to its flexibility. Additionally, silver nanowire can be easily patterned by laser ablation, which is free of dangerous chemicals. However, a yellowish color change reducing visibility is observed on the patterned area of the silver nanowires, and this yellowing phenomenon prevents the use of silver nanowire as a transparent electrode material. We concluded that resolidified debris of melted and evaporated silver nanowires after laser ablation causes the color change of the electrode. Further research is needed to determine a means of mitigating this yellowing phenomenon.

• 한국정밀공학회지
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• 제24권5호
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• pp.104-109
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• 2007

Photochemical patterning of self-assembled mono layers (SAMs) has been performed by diode pumped solid state (DPSS) 3rd harmonic Nd:$YVO_4$ laser with wavelength of 355 nm. SAMs patternings of parallel lines have subsequently been used either to generate compositional chemical patterns or fabricate microstructures by a wet etching. This paper describes a selective etching process with patterned SAMs of alkanetiolate molecules on the surface of gold. SAMs formed by the adsorption of alkanethiols onto gold substrate employs as very thin photoresists. In this paper, the influence of the interaction between the functional group of SAMs and the etching solution is studied with optimal laser irradiation conditions. The results show that hydrophobic functional groups of SAMs are more effective for selective chemical etching than the hydrophilic ones.

• 한국재료학회지
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• 제10권2호
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• pp.171-174
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• 2000

본 연구에서는 실리콘 wafer위에 sputtering방법으로 진공증착된 CoNbZr 비정질 박막을 Nd:YAG 레이저로 식각하기 위한 실험을 했는데, 금속의 경우 표면에서 빛의 반사율이 매우 크기 때문에 파장이 $1.06{\mu\textrm{m}}$인 Nd:YAG 레이저의 에너지를 흡수하는 것이 매우 어려우므로 식각이 거의 이루어지지 않았다. 그래서 이러한 문제를 해결하기 위한 새로운 시도로서 본 연구에서는 빛의 흡수율이 좋은 검은색의 polymer막을 금속박막의 표면에 도포하고 이 polymer막 위에 레이저를 조사해서 금속박막의 식각하는 실험을 실시하였다. 기존의 방법으로는 laser power가 332W나 되는데도 식각이 거의 일어나지 않았지만 본 연구의 방법을 이용했을 때는 laser power가 114W로 1/3정도 밖에 안 되는데도 레이저 식각이 비교적 양호하게 이루어졌다. 이는 검은색의 polymer층이 Nd:YAG 레이저 에너지의 흡수 및 전달 층의 역할을 하기 때문인 것으로 생각된다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.612-615
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• 2003

Maskless laser patterning process is developed using 3rd harmonic Diode Pumped Solid State Laser with near visible wavelength of 355 nm. Photo-sensitive curable polymer is irradiated by UV laser and developed using polymer solvent to obtain quasi-3D patterns. We performed basic experiments for the various process conditions such as laser power, writing speed, laser focus, and polymer optical property to gain the optimal conditions. Experimentally, the patterns of trapezoidal shape were manufactured into dimension of 8${\mu}{\textrm}{m}$ width and 5.4${\mu}{\textrm}{m}$ height. This process could be applied to fabricate a single mode waveguide without expensive mask projection method.

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2006년도 춘계학술발표대회 논문집
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• pp.123-128
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• 2006

We constructed a micro-patterning system that build patterns on a photoresist coated wafer using laser direct writing system. Confocal microscope system was adapted for real-time auto-focusing of the laser writing lens to generate lines of uniform width.

• 한국레이저가공학회지
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• 제16권4호
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• pp.1-6
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• 2013

Femtosecond laser patterning of ITO on a touch screen panel with a shaped fs laser beam was investigated. A quasi flat-top beam was formed using a variable mask and a planoconvex lens. The spatial profile of the original Gaussian beam and the shaped beam were monitored by a CCD beam profiler. The laser patterned ITO film was examined using an optical microscope, Scanning Electron Microscope (SEM) with Energy Dispersive X-ray Spectroscopy (EDS), and Atomic Force Microscope (AFM). It turned out that the quality of the ITO pattern fabricated by a shaped beam is superior to that of the pattern without beam shaping in terms of debris generation, height of the craters, and homogeneity of the bottom. Optimum processing window was determined at the laser irradiance exhibiting 100% removal of Sn. The removal rate of In was measured to be 83%.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.177-178
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• 2012