• Title/Summary/Keyword: Laser Diode(LD)

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Fabrication of deflector integrated laser diodes and light deflection (광 편향기 집적 레이저 다이오드의 제작 및 광의 편향)

  • 김강호;권오기;김종회;김현수;심은덕;오광룡;김석원
    • Korean Journal of Optics and Photonics
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    • v.15 no.2
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    • pp.171-176
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    • 2004
  • A light deflector integrated laser diode(LD) was fabricated and the characteristics of LD and ourput beam deflection as a function of deflector injection current were measured. To integrate the deflector with LD, a passive waveguide was integrated with the LD and a triangular-type light deflector was fabricated on the upper clad of the passive waveguide section. Light deflection from the fabricated light deflector is controlled by the effective refractive index variation induced by carrier injection. To characterize the effect of the deflector injection current, threshold current, slope efficiency, and output beam spectrum were measured as a function of deflector injection current. From these measured data, the increment in the threshold current and the decrement of the slope efficiency were observed. However, the output beam spectrum was not affected by the deflector. The Beam Propagation Method(BPM) was used to simulate the proposed device and the light deflection was measured by the far-field pattern of the output beam as a function of the deflector injection current. In the fabricated deflector integrated LD, the deflection angle of 1.9$^{\circ}$ at the injection current of 15 ㎃ was obtained.

GaN계 Laser Diode 개발 기술

  • 박용조
    • Electrical & Electronic Materials
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    • v.13 no.1
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    • pp.4-10
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    • 2000
  • 차세대 고집적 광기록 기기의 광원으로 사용될 GaN계 자색 LD의 개발은 괄목할만한 속도로 이루어지고 있으며, 이미 Pick-up용으로 사용될 수 있는 저출력 5 mW급 LD는 시제품이 나오고 있다. 2002년경에는 30 mW급 고출력 자색 LD를 장착한 DVDR이 시장에 출현할 것으로 예상되며, 이를 위해서는 저결함 박막성장이 절실하게 요구된다. 결정내결함을 감소시키기 위한 방법으로 ELOG 성장법이 보편적으로 사용되나 궁극적으로는 GaN 기판 개발이 필연적으로 뒤따라야할 것으로 판단된다.

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Design of 2.5 Gbps CMOS LD driver (2.5 Gbps CMOS LD 구동기 설계)

  • Kim Kyung-Min;Choi Jin-Ho;Choi Young-Wan;Jo Won-Jin
    • 한국정보통신설비학회:학술대회논문집
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    • 2004.08a
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    • pp.37-40
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    • 2004
  • 본 논문에서는 $0.35{\mu}m$ CMOS공정을 이용하여 2.5 Gbps로 동작하는 LD(Laser Diode) 구동기를 설계하였다. 전기 신호를 광 신호로 변환시켜 주는 레이저 다이오드(LD)를 동작시키기 위해서는 LD 구동기가 필요하게 되며, LD 구동기는 크게 LD 문턱전류 이상의 전류를 공급하기 위한 바이어스부와 바이어스 전류를 기반으로 전기신호를 광신호로 변조하는 변조부로 나뉘어 진다. 설계한 LD 구동기는 LD의 등가회로를 이용하여 모의실험 과정을 거쳤으며, MOSFET의 GATE단에 안정된 입력전압을 인가함으로써 안정된 바이어스 전류의 공급을 꾀하였다. 디자인된 LD 구동기는 11 mA 정도의 바이어스 전류를 공급하여 주었으며, 4 mA 정도의 변조전류를 공급한다.

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Design and Fabrication of Reflection-type Pump LD Protection Filters for High Power Fiber Lasers by Using Ta2O5/SiO2 Thin Films (Ta2O5/SiO2를 이용한 고출력 광섬유 레이저의 펌프 LD 보호기용 반사형 필터 설계 및 제작)

  • Sung, Hamin;Kim, Jae Hun;Lee, Seok;Jhon, Young Min
    • Korean Journal of Optics and Photonics
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    • v.23 no.3
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    • pp.124-127
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    • 2012
  • We designed and fabricated dichroic filters for high-power fiber lasers to protect the pumping laser diode from counterpropagating laser beams. The transmittance at laser diode wavelengths of 905 nm~925 nm was designed to be less than 0.1% and the transmittance at the fiber laser or Brillouin scattering wavelengths of 1020 nm ~ 1100 nm was designed to be more than 99.9%. Since oxide materials have good adhesion to the $SiO_2$ substrate, $SiO_2/Ta_2O_5$ were used as coating materials. The filter was fabricated according to our optimized design and its characteristics were compared with the theoretical design. As a result, the transmittance at laser diode wavelengths of 905 nm~925 nm was measured to be less than 0.1%, and the transmittance at the fiber laser or Brillouin scattering wavelengths of 1020 nm~1100 nm was measured to be more than 95.5%, which coincided well with the theoretical design considering processing errors. The filter was found to operate well over 1W of input laser power.

The mesa formation and fabrication of planar buried heterostructure laser diode by using meltback method (Meltback을 이용한 mesa shape의 형성과 평면매립형 반도체레이저의 제작)

  • 황상구;오수환;김정호;김운섭;김동욱;홍창희
    • Korean Journal of Optics and Photonics
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    • v.10 no.6
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    • pp.518-523
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    • 1999
  • In thi, study, we made experiments to fonn a mesa shape by meltback method with various concentration of solutions and found that unsaturated (20%) InGaAsP (1.55 !-tm) solution at a growth temperature was the most suitable for the formation of a mesa ,hape on the wafer which has an InGaAsP active layer and an InP cap layer on an n-InP substrate. It was difficult to form a proper mesa shape for the fabrication of PBH-LDs only by the meltback method; therefore, we fabricated PBH-LDs by forming the mesa shape with the meltback method after wet etching and by growing a current-blocking layer successively. As the electrical and optical charaleri,tiecs of MQW-PBH-LDs fabricated by above methods, when the cavity length was $300{\mu}m$, the threshold current was about 10 mA, internal quantum efficiency 82%, internal loss $9.2cm^{-1}$, and characteristic temperature was 65 K at $25~45^{\circ}C$ and 42 K at $45~65^{\circ}C$. /TEX>.

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Evaluation of LDF Signal Processing Algorithms Using Self-mixing Effect of Laser Diode (LD의 자기혼합 효과를 이용한 LDF의 신호처리 알고리즘의 평가)

  • Go, Han-U;Kim, Jong-Won
    • Journal of Biomedical Engineering Research
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    • v.19 no.4
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    • pp.369-377
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    • 1998
  • This paper describes the results of investigations comparing the relative in vitro responses of different signal processing algorithms for laser Doppler flowmetry(LDF) using self-mixing effect of laser diode(LD). A versatile laser Doppler system is described which enabled complex signal processing to be implemented relatively simply using digital analysis. The flexibility of the system allowed a variety of processing algorithms to be studied by simply characterising the algorithm of interest under software control using a personal computer. Two in-vitro physical models are also presented which was used to maintain reproducible fluid flows Flows of particles were studied in two physical models using a 780nm laser diode source. The results show that frequency weighted algorithms(first and second moments, rate to zero moment) are responsive to particle velocity more than concentration, whereas non-weighted algorithm (zero moment responds to concentration and velocity.

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Development of High-Power AlGaAs SCH-SQW Laser Diode (고출력 AlGaAs SCH-SQW 레이저 다이오드 개발)

  • 손진승;계용찬;권오대
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.10
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    • pp.27-32
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    • 1993
  • Separate-confinement hetero-structure (SCH) broad area Laser Diodes (LD's) were fabricated from $Al_{0.07}$Ga$_{0.93}$/. As single-quantum-well (SQW) grown by metal organic chemical vapor deposition (MOCVD). Under pulsed operation, we obtained maximum output powers of about 0.8watt/facet and 1.83watt/facet from LD's with 60$\mu$m and 160$\mu$m channel width, respectively, without facet coatings. The differential quantum efficiency of the 60$\mu$m wide LD was about 21.7%/facet and its threshold current density was about 1k [A/cm$^{2}$]. The differential quantum efficiency of the 160$\mu$m wide LD was about 25.6%/facet and its threshold current density was about 1k[A/cm$^{2}$]. The minimum threshold current density of 60$\mu$m wide LD's was 620[A/cm$^{2}$] when the cavity length was 603$\mu$m and the minimum threshold current density of 160$\mu$m wide Ld's was 675[A/cm$^{2}$] when the cavity length was 752$\mu$m. The internal quantum efficienty and the internal loss of both LD's were 92.3% and 18.1cm$^{1}$, respectively.

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Fabrication of High Power $Al_{0.07}$$Ga_{0.93}$As Laser Diode Array) (고출력 $Al_{0.07}$$Ga_{0.93}$As 레이저 다이오드 어레이 제작)

  • 손노진;박성수;안정작;권오대;계용찬;정지채;최영수;강응철;김재기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.10
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    • pp.43-50
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    • 1995
  • A laser diode(LD) structure consisting of a single 150$\AA$ $Al_{0.07}$Ga$_{0.93}$As quantum well active region operating at ${\lambda}$=809nm, cladded with an AlGaAs graded-index separate confinement heterostructure, has bes been grown by MOCVD. Temperature coefficient of wavelength is approximately 0.2nm $^{\circ}C$ for the diode. The active aperture consists of five emitters separated from each other by means of SiO$_{2}$ deposition and stripe formation, which creates insulating regions that channel the current to 100-$\mu$m-wide stripes placed on 450-$\mu$m centers. From a typical uncoated LD, the output power of 0.8W has been obtained at a 1$\mu$s, 1kHz pulsed current level of 2.0$\AA$, which results in about 64% external quantum efficiency. The threshold current density is 736A/cm$^{2}$ for the case of 500$\mu$m cavity length LD's. The measure of an internal quantum efficiency was 75.8% and the internal loss 4.83$cm^{-1}$ . Finally, 3.1W output power has been obtained at a 1$\mu$s, 1kHz pulsed current level of 9A from the 500$\mu$m-aperture LD array with 460-$\mu$m- cavity length.

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Implementation of a blood flow simulator and a blood flowmeter probe using self-mixing effect of the laser diode (혈류 시뮬레이터와 LD의 자기혼합효과를 이용한 혈류계 프로브의 구현)

  • Kim, Jong-Weon;Ko, Han-Woo
    • Proceedings of the KOSOMBE Conference
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    • v.1998 no.11
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    • pp.76-77
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    • 1998
  • In this paper, the authors have implemented a blood flow simulator and a blood flowmeter probe using self-mixing effect of the laser diode. The purpose of the blood simulator is to simulate microvascular blood flow in tissue. It consists of melinex film (thickness = $125{\mu}m$) which has similar optical characteristics to epidermis and porous polyethylene filter (Vyon, porosity 35%, mean pore size $50{\mu}m$, thickness=1 mm) which has similar optical characteristics to dermis. The blood flowmeter probe consists of laser diode(5 mW, 780 nm wavelength), CD lens(focal lenght 12 mm), current-to-voltage converter, highpass filter, and preamplifier. It doesn't need optical fiber, therefore, implementation of the probe is simpler than conventional probe using optical fiber.

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Small Methane Detection System using Optical Spectrum Characteristics (분광특성을 이용한 소형의 메탄 가스 감지 시스템)

  • Jo, Kyung-Hwa;Lyu, Geun-Jun;Kim, Eung-Soo
    • Journal of Sensor Science and Technology
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    • v.20 no.1
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    • pp.53-57
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    • 2011
  • We developed a small methane detection system because methane gas is used in many areas and is dangerous. The developed system consisted of LD(Laser Diode) tuned a wavelength of $1.65\;{\mu}m$, two mirrors to collect a laser beam, photo detector. It could detect methane gas at a long range and its sensitivity was 1.98 V/$CH_4%$.