• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.229.2-229.2
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• 2013

Yttrium oxide (Y2O3)는 band gap이 5.5 eV 정도로 상대적으로 넓고, 굴절상수가 1.8, 유전율이 10~15, Silicon 과의 격자 불일치가 작은 특성을 가지고 있다. 또한 녹는점이 높아 열적으로 안정하기 때문에 전자소자 및 광학소자에 다양하게 응용되는 물질이다. Y2O3 박막은 다양한 방법으로 증착할 수 있는데, 그 방법에는 e-beam evaporation, laser ablation, sputtering, thermal oxidation, metal-organic chemical vapor deposition, and atomic layer deposition (ALD) 등이 있다. ALD는 기판 표면에 흡착된 원자들의 자기 제한적 반응에 의하여 박막이 증착되기 때문에 박막 두께조절이 용이하고 step coverage와 uniformity 측면에서 큰 장점이 있다. 이전에는 Y(thd)3 and Y(CH3Cp)3 와 같은 금속 전구체를 이용하여 ALD를 진행하여, 증착 속도가 낮고 defect이 많아 non-stoichiometric한 조성의 박막이 증착되는 문제점이 있었다. 이번 연구에서는, (iPrCp)2Y(iPr-amd)와 탈이온수를 사용하여 Y2O3 박막을 증착하였다. Y2O3 박막 증착에 사용한 Y 전구체는 상온에서 액체이고 $192^{\circ}C$ 에서 1 Torr의 높은 증기압을 갖는다. Y2O3 박막 증착을 위하여 Y 전구체는 $150^{\circ}C$ 로 가열하여 N2 gas를 이용하여 bubbling 방식으로 공정 챔버 내로 공급하였다. Y2O3 박막의 ALD window는 $250{\sim}350^{\circ}C$ 였으며, Y 전구체의 공급시간이 5초에 다다르자 더 이상 증착 두께가 증가하지 않는 자기 제한적 반응을 확인할 수 있었다. 그리고 증착된 Y2O3 박막의 특성 분석을 위해 Atomic force microscopy (AFM)과 X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) 를 진행하였다. 박막의 Surface morphology 는 매끄럽고 uniform 하였으며, 특히 고체 금속 전구체를 사용했을 때와 비교하여 수산화물이 거의 없는 박막을 얻을 수 있었다. 그리고 조성 분석을 통해 증착된 Y2O3 박막이 stoichiometric하다는 것을 알수 있었다. 또한 metal-insulator-metal (MIM) 구조 (Ru/Y2O3/Ru) 의 resistor 소자를 형성하여 저항 스위칭 특성을 확인하였다.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.270-275
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• 2000

The Pt/YMnO$_3$/Y$_2$O$_3$/Si structure for metal/ferroelectric/insulator/semiconductor(MFIS)-FET was fabricated and effect of $Y_2$O$_3$layer on the properties of MFIS structure was investigated. The $Y_2$O$_3$ thin films on p-type Si(111) substrate deposited by Pulsed Laser Deposition were crystallized along (111) orientation irrespective of the deposition temperatures. Ferroelectric YMnO$_3$ thin films deposited directly on p-type Si (111) by MOCVD resulted in Mn deficient layer between Si and YMnO$_3$. However, YMnO$_3$ thin films having good quality and stoichiometric composition can be obtained by adopting $Y_2$O$_3$ buffer layer. The memory window of the $Y_2$O$_3$thin films with YMnO$_3$ film is greater than that of the YMnO$_3$ thin films without $Y_2$O$_3$ film after the annealing at 85$0^{\circ}C$ in vacuum ambient(100mtorr). The memory window is 1.3V at an applied voltage of 5V.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.377-377
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• 2016

Under nanosecond-pulsed laser irradiation, light-absorbing thin films have been used for photoacoustic transmitters for ultrasound generation. Especially, nanostructured absorbers are attractive due to high optical absorption and efficient thermoacoustic energy conversion: for example, 2-dimensional (2-D) gold nanostructure array, synthetic gold nanoparticles, carbon nanotubes (CNTs), and reduced graphene oxides. Among them, CNT has been used to fabricate a composite film with polydimethylsiloxane (PDMS) that exhibits excellent photoacoustic conversion performance for high-frequency, high-amplitude ultrasound generation. Previously, CNT-PDMS nanocomposite films were made by using a high-temperature chemical vapor deposition (HTCVD) process for CNT growth. However, this approach is not suitable to fabricate large-area CNT films (>several cm2). This is because a chamber dimension of HTCVD is limited and also the process often causes nonuniform CNT growth when the film area increases. As an alternative approach, a solution-based process can be used to overcome these issues. We develop PDMS composite transmitters, based on the solution process, using several nanostructured light-absorbers such as CNTs, nanoink powders, and imprinted regular arrays of gold nanostructure. We compare fabrication processes of each composite transmitters and photoacoustic output performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.375-375
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• 2007

In the conventional crystallization method, thepoly-Si TFTs show poor device-to-device uniformity because of the random location of the grain boundaries. However, our new crystallization method introduced in this paper employed substrate-embedded seeds on the highly ordered anodic alumina template to control both the location of seeds and the number of grain boundaries intentionally. In the process of excimer laser crystallization (ELC), a-Si film deposited on the anodic alumina by low pressure chemical vapor deposition (LPCVD) is transformed into fine poly-Si grains by explosive crystallization (XC) prior to primary melting. At the higher energy density, the film is nearly completely melted and laterally grown by super lateral growth (SLG) from remained small part of the fine poly-Si grains as seeds at the Si/anodic alumina interface. Resultant grain boundaries have almost linear functions of the number of seeds in concavities of anodic alumina which have a constant spacing. It reveals the uniformity of. device can be enhanced prominently by controlling location and size of pores which contains fine poly~Si seeds under artificial anodizing condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.320-320
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• 2007

Nowadays, ZnO thin films are investigated as transparent conductive electrodes for use in optoelectronics devices including flat displays, thin films transistors, solar cells because of their unique optical and electrical properties. For the use as transparent conductive electrodes, a film has to have low resistivity, high absorption in the ultra violent light region and high optical transmission in the visible region. Different technologies such as electron beam evaporation, chemical vapor deposition, laser evaporation, DC and RF magnetron sputtering and have been reported to produce thin films of ZnO with adequate performance for applications. However, highly transparent and conductive doped-ZnO thin films deposited by a metal-organic decomposition method have not been reported before. In this work, the effect of dopant concentration, heating treatment and annealing in areducing atmosphere on the structure, morphology, electrical and optical properties of ZnO thin films deposited on glass substrates by a Sol-gel method are investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.93-93
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• 2000

수소화된 비정질 탄소(a-C:H)는 그 증착 조건에 따라서 여러 가지 다른 구조와 특성을 갖게 되며, 특히 DLC(diamond-like carbon) 및 CNT(Carbon nanotube)는 FED (field emission display) 개발 면에서 중요하게 연구되고 있다. 우리는 a-C:H 박막을 PECVD (plasma-enhanced chemical vapor deposition) 방법으로 증착하고 CH4 가스를 사용하였고 기판 온도는 상온-32$0^{\circ}C$ 사이에서 변화되었다. 기판은 Corning 1737 glass, quartz, Si, Ni 등을 사용하였다. 증착 압력과 R.F. power는 각각 0.1-1 Torr 와 12-60w 사이에서 변화되었다. ESR 측정은 X-band(주파수 약 9 GHz)에서 그리고 상온에서 행해졌다. 상온에서의 스핀밀도는 약한-표준피치(weak-pitch standard) 스펙트럼과 비교하여 얻을 수 있었다. 그리고 a-C:H 박막의 구조는 He-Ne laser(파장 632.8 nm)를 이용하는 micro-Raman spectroscopy로 분석하였다. 증착조건에 따른 스핀밀도의 변화 및 Raman 스펙트럼에서의 D-peak, G-peak의 위치 및 반치록, I(D)/I(G) 등을 조사하였다. 증착된 a-C:H 박막은 R.F.power가 증가할수록 대체로 스핀밀도가 증가하였으며, Raman 스펙트럼에서의 I(D)/I(G) 비율은 대체로 감소하였다. 증착된 박막들은 polymer-like Carbon으로 추정되었으며, 스핀밀도가 증가할수록 대체적으로 흑연 구조 영역이 증가됨을 알 수 있었다. 또한 glass나 Si 기판에 비해 Ni 기판위에서 polymer-like Carbon 구조는 향상되는 경향을 보였다.

• Journal of Sensor Science and Technology
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• v.30 no.5
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• pp.279-285
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• 2021

Recently, cesium tellurium iodine (Cs₂TeI₆) has emerged as an inorganic halide perovskite material with potential application in optoelectronic devices due to its high absorption coefficient, suitable bandgap and because it consists of nontoxic and earth-abundant elements. However, studies on its fabrication process as well as photoresponse characteristics are limited. In this study, a simple and effective method is introduced for the synthesis of Cs₂TeI₆ thin films by a two-step dry process. A Cs₂TeI₆-based lateral photosensor was fabricated, and its photoresponse characteristics were explored under laser illuminations of four different wavelengths in the visible range: 405, 450, 520, and 655 nm. The initial photosensing results suggest potential application and can lead to more promising studies of Cs₂TeI₆ film in optoelectronics.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.469-474
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• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.

• Journal of the Korea Convergence Society
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• v.8 no.5
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• pp.161-167
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• 2017

We have fabricated and characterized $32{\times}32$ photonic quantum ring (PQR) laser arrays uniformly operable with $0.98{\mu}A$ per ring at room temperature. The typical threshold current, threshold current density, and threshold voltage are 20 mA, $0.068A/cm^2$, and 1.38 V. The top surface emitting PQR array contains GaAs multiquantum well active regions and exhibits uniform characteristics for a chip of $1.65{\times}1.65mm^2$. The peak power wavelength is $858.8{\pm}0.35nm$, the relative intensity is $0.3{\pm}0.2$, and the linewidth is $0.2{\pm}0.07nm$. We also report the wavelength division multiplexing system experiment using angle-dependent blue shift characteristics of this laser array. This photonic quantum ring laser has angle-dependent multiple-wavelength radial emission characteristics over about 10 nm tuning range generated from array devices. The array exhibits a free space detection as far as 6 m with a function of the distance.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.