• 제목/요약/키워드: Large display devices

검색결과 166건 처리시간 0.028초

SnO2 기반 고체상의 투과도 가변 소자 제조 (Fabrication of SnO2-based All-solid-state Transmittance Variation Devices)

  • 신동균;서유석;이진영;박종운
    • 반도체디스플레이기술학회지
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    • 제19권3호
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    • pp.23-29
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    • 2020
  • Electrochromic (EC) device is an element whose transmittance is changed by electrical energy. Coloring and decoloring states can be easily controlled and thus used in buildings and automobiles for energy saving. There exist several types of EC devices; EC using electrolytes, polymer dispersed liquid crystal (PDLC), and suspended particle device (SPD) using polarized molecules. However, these devices involve solutions such as electrolytes and liquid crystals, limiting their applications in high temperature environments. In this study, we have studied all-solid-state EC device based on Tin(IV) oxide (SnO2). A coloring phase is achieved when electrons are accumulated in the ultraviolet (UV)-treated SnO2 layer, whereas a decoloring mode is obtained when electrons are empty there. The UV treatment of SnO2 layer brings in a number of localized states in the bandgap, which traps electrons near the conduction band. The SnO2-based EC device shows a transmittance of 70.7% in the decoloring mode and 41% in the coloring mode at a voltage of 2.5 V. We have achieved a transmittance change as large as 29.7% at the wavelength of 550 nm. It also exhibits fast and stable driving characteristics, which have been demonstrated by the cyclic experiments of coloration and decoloration. It has also showed the memory effects induced by the insulating layer of titanium dioxide (TiO2) and silicone (Si).

대규모 인터랙티브 디스플레이 환경에서의 멀티 공간 인터랙션 인터페이스 (Multi Spatial Interaction Interface in Large-scale Interactive Display Environment)

  • 윤창옥;박정필;윤태수;이동훈
    • 한국콘텐츠학회논문지
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    • 제10권2호
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    • pp.43-53
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    • 2010
  • 유비쿼터스 컴퓨팅 기술들의 발달로 인해 인터랙티브 디스플레이는 사용자에게 다양한 인터랙션을 제공하고 있다. 이러한 인터랙션을 위해 다양한 방법들이 연구되었지만 디바이스 사용성과 단일 사용자에게 제공된다는 한계점이 발생하였다. 따라서 본 논문에서는 앰비언트 디스플레이 환경에서 다수 사용자에게 다양한 인터랙션을 제공하기위한 공간 멀티 인터랙션 인터페이스를 제안한다. 이를 위해 적외선 LED 배열바(IR-LEDs Array Bar)를 통해 사용자가 인터랙션 할 수 있도록 인터랙션 막을 생성한다. 이때 사용자는 인터랙션 막에서 공간 터치를 통해 다양한 인터랙션을 경험할 수 있다. 따라서 휴대 디바이스 없이도 사용자의 자연스러운 손동작만으로 인터랙션을 할 수 있는 인터랙티브 디스플레이 시스템과 인터페이스 방법을 제공한다.

멀티디스플레이와 ZA센서를 이용한 가상현실 체험관 구축 방법 (Construction of VR Experience Pavilion Using Multi-display and ZA Sensor)

  • 주재홍;이현철;김은석
    • 한국콘텐츠학회:학술대회논문집
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    • 한국콘텐츠학회 2008년도 춘계 종합학술대회 논문집
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    • pp.28-32
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    • 2008
  • 가상현실 체험관에서 디스플레이와 상호작용 인터페이스는 사용자의 몰입감을 증대시키기 위해 중요한 요소들이다. 3D 환경을 디스플레이하는 가상현실 체험관은 시야각 제약으로 단일시점 멀티디스플레이가 어렵고, 대형 디스플레이의 경우 체험관 구축에 많은 비용이 든다. 또한 몰입감 향상에 필수적인 사용자와 가상현실과의 상호작용은 디스플레이 영역에 제한되는 터치스크린이나 버튼방식이 대부분이다. 본 논문에서는 가상환경을 실시간으로 렌더링 할 수 있는 확장 가능한 멀티디스플레이 구축방법과 사용자의 자유로운 움직임을 보장하는 무선인터페이스인 ZA Sensor를 이용한 상호작용 방법을 제안한다. 제안방법을 이용하여 상대적으로 적은 비용으로 몰입감이 높은 가상현실 체험관을 구축할 수 있다.

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Co-Deposition of Rubrene doped Alq3 film Using Belt Source Evaporation Techniques for Large Size AMOLED

  • Hwang, Chang-Hun;Ju, Sung-Hoo;Park, Myung-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1664-1667
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    • 2007
  • The belt source evaporation is for the large size AMOLED devices to re-sublimate the organic film deposited on the metal plate. Using the plane source, the PL spectrum of the doped organic film has been studied for the first time. The PL peak of the pure Alq3 film was 512nm and that of the pure Rubrene was 557nm. The PL peak of the 2% Rubrene doped Alq3 film was shifted to $536{\pm}2nm$. The PL peak wavelength measured at the front surface of the film and at the back surface of the film was measured as nearly same as that the doping ratio maintains uniform within the film thickness. In conclusion, the doping control of the organic film becomes real using the belt type plate sublimation deposition.

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Views on the low-resistant bus materials and their process architecture for the large-sized & post-ultra definition TFT-LCD

  • Song, Jean-Ho;Ning, Hong-Long;Lee, Woo-Geun;Kim, Shi-Yul;Kim, Sang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.9-12
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    • 2008
  • For the large-sized and post-ultra definition TFT-LCD, improved drivability is prerequisite not only for the integration of driving circuit on glass but also for the chargeability of each pixel. In order to meet required drivability, currently adopted process architecture and materials are modified for the RC delay reduction, including the drastic increase of gate bus thickness and its related solution for step coverage. We present new process architecture and material selection for the next generation TFT-LCD devices.

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잉크젯 파형과 잉크 액적 체적의 관계 실험적 분석 (Experimental Study on the Relationship between Ink Droplet Volume and Inkjet Waveform)

  • 권계시;명재환
    • 한국정밀공학회지
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    • 제26권4호
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    • pp.141-145
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    • 2009
  • Recently, inkjet technology has emerged as one of the most powerful tools for patterning electronics devices, such as large area display applications, RFID, PCB patterning, etc. By using the Inkjet technology, the droplet speed as well as the size can be controlled precisely. In this paper, the relationship between waveform and droplet size will be investigated by means of experiment. Also the relationship between inkjet speed and droplet size will be discussed. It was shown from experimental results that ink droplet size from the nozzle diameter of $50{\mu}m$ can be varied from 37 to $58{\mu}m$ by modifying the inkjet waveform when the speed of the droplet is 1m/sec. Finally, experimental results indicate that small drops are more difficult to generate than large drops since the jetting conditions for making small drops are sensitively affected by the dwell time variation.

Large-Scale Vacuum Technologies for $730{\times}920$ AMOLED Production; The world's largest OLED deposition system

  • Hwang, Changhun;Han, Seung-Jin;Kim, Do-Gon;Yook, Sim-Man;Kim, Seung-Han;Kim, Jin-Hyung;Kim, Beom-jai;Won, You-Tae;Park, Ki-Joo;Kim, Kwang-Ho;Kim, Byung-Seok;Kang, Teak-Sang;Kim, Jung-Hwan;Seo, Sang-Won;Song, Ha-Jin;Sim, Hyung-Bo;Noh, Young-Bo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.668-672
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    • 2005
  • Doosan DND, OLED manufacturing equipment maker, has developed the largest deposition system to produce $730{\times}920mm$ size AMOLED devices for the first time in the world. It is necessary for producing 40" AMOLED panels to develop the large-scaled vacuum technologies including ICP plasma, stretching glass chuck, organic deposition, metal deposition and hybrid encapsulation processes.

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비압축 HD급 영상 및 고음질 음성 출력을 지원하는 휴대용 게임기 구현 (Development of portable game device with uncompressed HD video and high quality sound output)

  • 이충희;이종훈;정우영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년 학술대회 논문집 정보 및 제어부문
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    • pp.391-393
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    • 2006
  • In this paper, we develop a portable game device with uncompressed HD video and high quality sound output. Portable game devices support not only game function but also various complex functions recently. It especially supports TV-Out port to play realistic game, connecting a large screen display device. But the video and audio output signals of conventional TV-out port have the low performance and these signals are analog output. So, it is difficult that the users enjoy realistic game with benefit of high resolution digital TV. We propose the game device output with uncompressed digital signal, which has no delay of video/audio signal, also has strong immunity to external noise. Since it supports a high resolution video and high quality sound, users can playa realistic game. First, we implement the HDMI to the game device and we test reliability with the various resolutions video inputs and audio inputs. The proposed method can be applied multimedia devices requiring high performance output function as well as portable devices.

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High operating temperature stable OLEDs with reduced reflectivity cathodes

  • Popovic, Zoran D.;Aziz, Hany;Vamvounis, George;Hu, Nan-Xing;Paine, Tony
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.21-24
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    • 2003
  • The understanding of the mechanism of device degradation has been accomplished recently, for devices using $AlQ_3$ electron transport and emitter molecule. In this presentation the experimental evidence for the degradation mechanism of $AlQ_3$ based devices will be reviewed, showing that the hypothesis of an unstable $AlQ_3^+$ cation explains a large amount of experimental data. This hypothesis, however, explains not only the room temperature device degradation in time but also sheds light on temperature stability of OLEDs. Dependence of half-life of a series of devices with an emitter layer composed of a mixture of $AlQ_3$ and different hole transport molecules (mixed emitter layer) will be discussed when they are operated at elevated temperatures. These results can also be explained in the framework of an unstable $AlQ_3^+$ species. An OLED structure containing a doped mixed emitter layer will be described, which shows extraordinary stability, half-life of 1200 hours at operating temperature of 70 C and initial luminance of 1650 $cd/m^2$. We will also discuss a novel Black $Cathode^{TM}$ OLED with reduced optical reflectivity, which is also stable at elevated temperatures. The new cathode utilizes a conductive light-absorbing layer made of a mixture of metals and organic materials.

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Low temperature plasma deposition of microcrystalline silicon thin films for active matrix displays: opportunities and challenges

  • Cabarrocas, Pere Roca I;Abramov, Alexey;Pham, Nans;Djeridane, Yassine;Moustapha, Oumkelthoum;Bonnassieux, Yvan;Girotra, Kunal;Chen, Hong;Park, Seung-Kyu;Park, Kyong-Tae;Huh, Jong-Moo;Choi, Joon-Hoo;Kim, Chi-Woo;Lee, Jin-Seok;Souk, Jun-H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.107-108
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    • 2008
  • The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.

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