• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.34 no.6
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• pp.67-74
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• 2006

In this paper, a tiled display system is developed to get a high-resolution image in visualization of large-scale structural analysis data with low-resolution display devices and low-cost cluster computer system. Concerning the hardware system, some of the crucial points are investigated, and a new beam-projector positioner is designed and manufactured to resolve the keystone phenomena which result in distorted image. In the development of tiled display software, Qt and OpenGL are utilized for GUI and rendering, respectively. To obtain the entire tiled image, LAM-MPI is utilized to synchronize the several sub-images produced from each cluster computer node.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.05a
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• pp.463-466
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• 2005

While recent display devices are becoming light and slim, the size of a screen is especially the important issue in the field of display devices. Furthermore, it is also required that the projection TV, a large screen display device, be able to represent higher resolutions as the digital broadcasting is set off. In order to realize high resolutions in a DLP projection TV, the number of pixel on DMD should be increased. However, a large number of pixels make it difficult to realize resulting small sized pixels and this cause the increase in cost. Therefore, we propose a simple and improved pixel enhancement actuator using the existing DMD by offsetting half pixels repeatedly in the vertical direction.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.53-58
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• 2009

A SMT mounter is a kind of equipment that mounts SMD parts quickly on the printed circuit board. By using linear motors, it is controlled with high speed and precision, which is similar to semi-conductor and display process equipment. It is necessarily used in an assembly process of an electronic device. Mobile devices such as a mobile phone and PDA are required to reduce mount areas due to the demands for high performance and small size. Hence, super small sized and complex mobile devices have been developed. To improve the productivity of the corresponding equipment, designs with large sized, high speed, and multidisciplinary functions have been consistently performed. Meanwhile, a design trend of large size and light-weight on SMT mounter causes a low natural frequency of systems and vibration problems at the high speed operation. In this paper, the dynamic characteristics of the SMD mounter system were investigated through a modal test and transmissibility test, and verified by finite element method. Also, various design improvement was performed to avoid the resonance phenomena.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1563-1565
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• 1997

Electroluminescence(EL)devices based on organic thin layers have attracted lot of interests because of their possible application as large-area light-emitting display. One of the problems of such devices is lifetime of the cell, where the degradation of the cell is partially due to the crystalliyzation of organic layers. In large part, this problem can be solved by using a multilayer device structure prepared by vapor deposition technique. In this study, blue lightemitting multilayer organic electroluminescence devices were fabricated using Poly (9-vinyl-carbazole) (PVK) and 2-(4'-tert-butylpheny])-5-(4"-bis-phenyl)1,3,4-oxadiazole (PBD) as hole trasport and electron transport material, respectively, where tris(8-hydroxyquinolinate) aluminum (Alq3) was used as a luminescenct material. A cell structure of glass substrate/indume-tin-oxide(ITO)/PVK/$Alq_3$/PBD/Mg:In was employed.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.205-206
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• 2000

The capacitance-temperature (C-T) measurement technique is proposed in the present work to investigate the thermal stability of organic and polymeric thin films for organic electroluminescent display (OELD). The single layer devices with the individual materials were subjected to the C-T measurement, prior to the examination of the complete OELD. The single layer devices with the small molecules destroyed below $180\;^{\circ}C$ depending on the kinds of materials. However, the device with the hole-transporting polyimide did not show any relaxation up to $200\;^{\circ}C$. The small molecule based OELDs failed to emit light after annealing, whereas that with the hole-transporting polyimide worked well in spite of large reduction in intensity.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1809-1811
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• 1999

In recent years, attempts have been made to greatly improve the display quality of active-matrix liquid crystal display devices, and many techniques have been proposed to solve such problems as gate delay, feed-through voltage and image sticking. Gate delay is one of the biggest limiting factors for large-screen-size, high-resolution thin-film transistor liquid crystal display (TFT/LCD) design. Many driving method proposed for TFT/LCD progress. Thus we developed gate driving signal generator. Since Pixel-Design Array Simulation Tool (PDAST) can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the driving signals of gate lines on the pixel operations can be effectively analyzed.

• Journal of Korea Game Society
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• v.10 no.2
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• pp.11-20
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• 2010

Recently there are various innovative user interfaces such as a wireless motion controller Wiimote appeared to give a new user experience which is different from the traditional devices like a joystick, mouse, or keyboard. With the advent of technologies, display devices become larger and larger in screen size and offer high-resolutions, and tiled display systems are also used in various applications. Although there are some efforts on investigating new interfaces developed for the large screen, there are a few studies conducted on user interaction on large displays such as tiled display. In this paper, we present a study evaluating and analyzing the effects of mouse or Wiimote user interactions on four different kinds of displays with various sizes and resolutions.

• Journal of the Semiconductor & Display Technology
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• v.1 no.1
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• pp.41-45
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• 2002

In modem manufacturing, new applations and technologies demand smaller, and functional devices to replace large systems. As miniaturization becomes a necessity, many companies are interested in small pumps for use in creating ultra-high vacuum, but past efforts to develop such systems have failed due to problems with vibration, stress, heat and power consumption. This paper shows analysis-based design techniques for high vacuum turbomolecular pump by finite element analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1279-1282
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• 2008

Organic field effect transistors are excellent candidates for addressing and local amplification elements for large area electronics because they can easily be processed at low temperatures on essentially arbitrary substrates. We present the use of these devices in an active matrix photodetector and as a buffer for a strain sensor.