• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.90.2-90.2
• /
• 2013

Vertically-aligned silicon nanostructure arrays (SNAs) have been drawing much attention due to their useful electrical properties, large surface area, and quantum confinement effect. SNAs are typically fabricated by chemical vapor deposition, reactive ion etching, or wet chemical etching. Recently, metal-assisted chemical etching process, which is relatively simple and cost-effective, in combination with nanosphere lithography was recently demonstrated for vertical SNA fabrication with controlled SNA diameters, lengths, and densities. However, this method exhibits limitations in terms of large-area preparation of unperiodic nanostructures and SNA geometry tuning independent of inter-structure separation. In this work, we introduced the layerby- layer deposition of polyelectrolytes for holding uniformly dispersed polystyrene beads as mask and demonstrated the fabrication of well-dispersed vertical SNAs with controlled geometric parameters on large substrates. Additionally, we present a new means of building in vitro neuronal networks using vertical nanowire arrays. Primary culture of rat hippocampal neurons were deposited on the bare and conducting polymer-coated SNAs and maintained for several weeks while their viability remains for several weeks. Combined with the recently-developed transfection method via nanowire internalization, the patterned vertical nanostructures will contribute to understanding how synaptic connectivity and site-specific perturbation will affect global neuronal network function in an extant in vitro neuronal circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.388-391
• /
• 2003

The properties of these detectors can be controlled by electronics and exposure conditions. Flat-panel detectors for digital diagnostic imaging convert incident x-ray images to charge images. Flat panel detectors gain more interest real time medical x-ray imaging. Active area of flat panel detector is $14{\times}17$ inch. Detector is based on a $2560{\times}3072$ away of photoconductor and TFT pixels. X-ray conversion layer is deposited upper TFT array flat panel with a 500m by thermal deposition technology. Thickness uniformity of this layer is made of thickness control technology(5%) of thermal deposition system. Each $139m{\times}139m$ pixel is made of thin film transistor technology, a storage capacitor and charge collection electrode having geometrical fill factor of 86%. Using the separate driving system of two dimensional mosaic modules for large area, that is able to 4.2 second per frame. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system..

• Carbon letters
• /
• v.14 no.3
• /
• pp.186-189
• /
• 2013

We report a highly sensitive $NO_2$ gas sensor based on multi-layer graphene (MLG) films synthesized by a chemical vapor deposition method on a microheater-embedded flexible substrate. The MLG could detect low-concentration $NO_2$ even at sub-ppm (<200 ppb) levels. It also exhibited a high resistance change of ~6% when it was exposed to 1 ppm $NO_2$ gas at room temperature for 1 min. The exceptionally high sensitivity could be attributed to the large number of $NO_2$ molecule adsorption sites on the MLG due to its a large surface area and various defect-sites, and to the high mobility of carriers transferred between the MLG films and the adsorbed gas molecules. Although desorption of the $NO_2$ molecules was slow, it could be enhanced by an additional annealing process using an embedded Au microheater. The outstanding mechanical flexibility of the graphene film ensures the stable sensing response of the device under extreme bending stress. Our large-scale and easily reproducible MLG films can provide a proof-of-concept for future flexible $NO_2$ gas sensor devices.

• Journal of the Semiconductor & Display Technology
• /
• v.9 no.2
• /
• pp.111-116
• /
• 2010

In a large area magnetron sputtering system, which is under the influence of high heat load from the plasma, it is necessary to use the effective water cooling in order to maintain the proper deposition performance and the economic use of target materials. A series of three-dimensional numerical simulations are carried out on the simplified model of the large area magnetron sputtering system with the cooling plate that includes the U-shaped water channel. The analysis is focused on the effects of water channel geometry, cooling water flowrate, thermal conductivity of target material, and the degree of target erosion on the cooling performance of cooling plate, which is represented by the temperature distribution of target material.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.4
• /
• pp.326-332
• /
• 2008

In this work CdS films were prepared by using chemical bath deposition, which is simple and inexpensive technique suitable for large deposition area. Annealing in air at different temperatures (300, 350, 400, 450 and $500^{\circ}C$) at constant time of 30 min, also for different times (15, 30, 45, 60 and 90 min) at constant temperature ($300^{\circ}C$) is achieved. X-Ray analysis has confirmed the formation of cadmium oxide (CdO) with slight increase in grain size, shift towards lower scattering angle due to relaxation in the tensile strain for deposition films, and structure change from cubic and hexagonal to the hexagonal. From electrical properties, significant increase in electrical conductivity appeared in samples annealed at $300^{\circ}C$ for 60 min, and at $350^{\circ}C$ for 30 min.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.286-286
• /
• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

• Journal of Radiation Protection and Research
• /
• v.45 no.3
• /
• pp.101-107
• /
• 2020

Background: An important lesson learned from the Fukushima accident is that the transition to the mid- and long-term phases from the emergency-response phase requires less than a year, which is not very long. It is necessary to know how much radioactive material has been deposited in an urban area to establish mid- and long-term countermeasures after a radioactive accident. Therefore, an urban deposition model that can indicate the site-specific characteristics must be developed. Materials and Methods: In this study, the generalized urban deposition velocity and the subsequent variation in radionuclide contamination were estimated based on the characteristics of the Korean urban environment. Furthermore, the application of the obtained generalized deposition velocity in a hypothetical scenario was investigated. Results and Discussion: The generalized deposition velocities of ¹³⁷Cs, ¹⁰⁶Ru, and ¹³¹I for each residence type were obtained using three-dimensional (3D) modeling. For all residence types, the deposition velocities of ¹³¹I are greater than those of ¹⁰⁶Ru and ¹³⁷Cs. In addition, we calculated the generalized deposition velocities for each residential types. Iodine was the most deposited nuclide during initial deposition. However, the concentration of iodine in urban environment drastically decreases owing to its relatively shorter half-life than ¹⁰⁶Ru and ¹³⁷Cs. Furthermore, the amount of radioactive material deposited in nonresidential areas, especially in parks and schools, is more than that deposited in residential areas. Conclusion: In this study, the generalized urban deposition velocities and the subsequent deposition changes were estimated for the Korean urban environment. The 3D modeling was performed for each type of urban residential area, and the average deposition velocity was obtained and applied to a hypothetical accident. Based on the estimated deposition velocities, the decision-making systems can be improved for responding to radioactive contamination in urban areas. Furthermore, this study can be useful to predict the radiological dose in case of large-scale urban contamination and can support decision-making for long-term measurement after nuclear accident.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
• /
• 2004.05a
• /
• pp.131-137
• /
• 2004

This paper is intended as an investigation of the deposition characteristics and mass transport flux estimation in the Nakdong estuary. In order to understand the effects of the tidal current circulation which influenced to an estuary terrain change, the seawater circulation calculation by the use of 2D numerical model for the three cases of without riverflow, mean and flood riverflow quantity condition practiced and each sectional net-flux of water quantity between sandbars(so called, dung) estimated. It may be that an estuary terrain change due to the large scale construction and reclamation at the Nakdong estuary influence to the long-time deposition characteristics. by the revim for the old research, we know that the development of the local sandbars has been moved toward the east-side from the west-side estuary area after the construction of the Nakdong river dike, at present the strong-acted location is the Bakhap-dung of the front sea of Tadea. The seawater circulation pattern at this large scale area of tidal flat bring on a change due to the water quantity outflowing from the Nakdong river. Base on the calculated results for the section net-flux of water quantity, we see that the accumulating action very strong at the local sea around Jangjado, Bakhapdung and Tadae for the case of flood riverflow quantity condition, but at the local sea around Jinudo for the another cases. Consequently, it is emphasized that in the Nakdong estuary the main sensitive regions which influenced from the discharge of riverflow were the local sea around Jangjado, Bakhapdung, Tadae and Jinudo.

• The Korean Journal of Ceramics
• /
• v.2 no.4
• /
• pp.216-220
• /
• 1996

In the present paper, a new type of DC arc plasma torch is disclosed. The principles of the new magnetic and fluid dynamic controlled large orifice long discharge tunnel plasma torch is discussed. Two series of DC Plasma Jet diamond film deposition equipment have been developed. The 20kW Jet equipped with a $\Phi$70 mm orifice torch is capable of deposition diamond films at a growth rate as high as 40$\mu\textrm{m}$/h over a substrate area of $\Phi$65 mm. The 100kW high power Jet which is newly developed based on the experience of the low power model is equipped with a $\Phi$120 mm orifice torch, and is capable of depositing diamond films over a substrate area of $\Phi$110 mm at growth rate as high as 40 $\mu\textrm{m}$/h, and can be operated at gas recycling mode, which allows 95% of the gases be recycled. It is demonstrated that the new type DC plasma torch can be easily scaled up to even higher power Jet. It is estimated that even by the 100kW Jet, the cost for tool grade diamond films can be as low as less than ＄4/carat.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.614-614
• /
• 2013

The effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. A synthetic method to produce such large area graphene films with precise thickness from mono- to few-layer would be ideal for chemists and physicists to explore the promising electronic applications of these materials. Here, large-area uniform mono-, bi-, and few-layer graphene films were successfully synthesized on copper surface in selective growth windows, with a finely tuned total pressure and $CH_4$/$H_{2gas}$ ratio. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.