• 제목/요약/키워드: Langmuir-Blodgett(LB) films

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BAM(Brewster angle microscopy)을 이용한 PAAS(Polyamic Acid Alkylamine Salts)의 Langmuir막과 Langmuir-Blodgett막의 특성 연구 (A. Study on the PAAS(Polyamic Acid Alkylamine Salts) Langmuir Films and Langmuir-Blodgett Films using BAM(Brewster angle microscopy))

  • 이승엽;강도열;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.147-151
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    • 1996
  • Brewster angle microscopy(BAM) makes it possible to observe the monolayer states on the water subphase and the phase transitions from a gaseous phase via a expanded phase to a condensed phase. Also BAM can be used to observe the films on the solid substrate such as Langmuir-Blodgett(LB) films. In this Paper Polyamic Acid Alkylamine Salts(PAAS) was used for forming L films and LB films and $\pi$-A isotherm showed pressure of each phase. We obtained BAM images as surface pressure increased. Images of LB films were compared with data from ellipsometry which was used to measure the film thickness. Images of both L films and LB films were analyzed with computer in the point of brightness.

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폴리이미드와 인지질 혼합물의 나노 Langmuir-Blodgett막의 전기화학적 특성에 관한 연구 (A Study on the Electrochemical Properties of Langmuir-Blodgett Nano-film Mixed with Polyimide and Phospholipid)

  • 박근호
    • 한국응용과학기술학회지
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    • 제29권3호
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    • pp.421-428
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    • 2012
  • 우리는 순환전압전류법에 의한 폴리이미드와 인지질혼합 나노LB 필름에 대한 전기화학적 특성을 조사하였다. polyamic acid와 인지질 단분자 LB막은 ITO glass에 Langmuir-Blodgett법을 사용하여 제막하였다. 전기화학적 특성은 $KClO_4$ 용액에서 3 전극 시스템 (Ag/AgCl 기준전극, 백금선 카운터 전극 및 LB 필름이 코팅된 ITO 작업 전극)으로 순환전압전류법을 사용하여 측정하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s였다. 그 결과 polyamic acid와 인지질 혼합물의 LB 필름은 순환전압전류도표로부터 환원전류로 인한 비가역공정으로 나타났다. Polyamic acid와 인지질혼합 LB막에서 확산계수(D)효과는 LAPC를 사용한 경우가 LLPC를 사용한 것 보다 확산계수 값이 적었다.

브롬화 알킬혼합물 단분자 LB막의 전기화학적 특징 (Electrochemical Properties of Langmuir-Blodgett(LB) Monolayer Films of Alkyl Bromides Mixture)

  • 손태철;김덕술;박근호
    • 한국응용과학기술학회지
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    • 제27권2호
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    • pp.202-207
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    • 2010
  • We investigated the electrochemical properties for Langmuir-Blodgett(LB) films mixed with l-bromotetradecane(Cl4), l-bromohexadecane(Cl6), and l-bromooctadecane(Cl8). The alkyl bromides mixture was deposited by using the Langmuir-Blodgett method on the ITO glass. The electrochemical properties measured by using cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, 1.5 and 2.0 N) of $NaClO_4$ solution. A measuring range was reduced from initial potential to -1350 m V, continuously oxidized to 1650 mV. The scan rate was 100 mV/s. As a result, LB films of Cl4, Cl6, and Cl8 mixture monolayers appeared irreversible process caused by only the oxidation current from the cyclic voltammogram. The diffusivity(D) effect of LB films decreased with increasing of alkyl bromides amount.

Langmuir-Blodgett법으로 제조한 기능성 폴리이미드 초박막의 전기화학적 특성 (Electrochemical Properties of Ultrathin Film Prepared Functional Polyimide by Langmuir-Blodgett Method)

  • 박근호;민창훈;손태철
    • 한국응용과학기술학회지
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    • 제26권4호
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    • pp.400-406
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    • 2009
  • We investigated the electrochemical properties for Langmuir-Blodgett (LB) films of functionalized polyimide. LB films of polyimide monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, and 1.5 N) of $NaClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100 and 150 mV/s, respectively. As a result, monolayer and multilayer LB films of polyimide are appeared on irreversible process caused by the oxidation current from the cyclic voltammogram.

LB법에 의한 분자소자의 기초연구 (I) (A Basic Study on Molecular Electronic Device by Langmuir-Blodgett Technique)

  • 권영수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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    • pp.98-100
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    • 1989
  • Langmuir-Blodgett(LB) technique will be used to produce ultra thin film, and then characterization of the physical and electrical properties of LB ultra thin films, this study will be an investigation for the possibilities of the ultra thin films as an Molecular Electronic Device.

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인지질 화합물의 나노 Langmuir-Blodgett막의 전기화학적 특성에 관한 연구 (A Study on the Electrochemical Characteristics of Langmuir-Blodgett Nano-Films of Phospholipid Compound)

  • 정아진;박근호
    • 한국응용과학기술학회지
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    • 제29권2호
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    • pp.311-316
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    • 2012
  • 우리는 순환전압전류법에 의한 LB 필름에 대한 전기화학적 특성을 조사하였다. 인지질 화합물은 ITO glass에 Langmuir-Blodgett법을 사용하여 제막하였다. 0.5, 1.0, 1.5 및 2.0 N $NaClO_4$ 용액에서 3 전극 시스템 (Ag/AgCl 기준전극, 백금선 카운터 전극 및 LB 필름이 코팅된 ITO 작업전극)으로 순환전압전류법을 사용하여 전기화학적 측정을 시도하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기전위인 -1350 mV로 환원시켰다. 그 결과, 인지질 화합물의 LB 필름은 순환전압전류도표로부터 오직 산화전류로 인한 비가역공정으로 나타났다. LB 필름의 확산계수(D) 효과는 인지질 화합물 양의 증가로 인하여 감소하였다.

Langmuir-Blodgett 초박막의 전압발생현상 (Phenomena of voltage generation in langmuir-blodgett ultra-thin films)

  • 국상훈;서장수;박상현;권영수
    • E2M - 전기 전자와 첨단 소재
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    • 제6권3호
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    • pp.228-231
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    • 1993
  • Langmuir-Blodgett(LB) 초박막 MIM구조의 소자에서 직류전압이 발생된다는 것은 이미 잘 알려져 있다. 발생전압의 원인은 LB막과 전극사이의 어떤 화학반응에 의한 것으로 보고되었다. 본 논문에서는 1986년에 제작되어 공기중에 방치된 LB 초박막 시료를 대상으로 실험한 결과, 제작 당시와 동일한 크기의 전압이 발생하고 있음을 확인할 수 있었다. 이때 LB막과 전극의 두께는 각각 20~30.angs. 및 2000.angs.정도이었다.

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Octa(2-ethylhexyloxy)Copper-Phthalocyanine LB막의 $NO_2$ 가스 탐지 특성에 관한 연구 (A study on the $NO_2$ Gas Detection Characteristics of Octa(2-ethylhexyloxy)Copper-Phthalocyanine Langmuir-Blodgett films)

  • 임준석;김영관;김정수
    • E2M - 전기 전자와 첨단 소재
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    • 제10권5호
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    • pp.419-424
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    • 1997
  • It is well known that the metallo-phthalocyanines (MPcs) are sensitive to toxic gaseous molecules such as NO$_2$ as well as are chemically and thermally stable. Therefore, lots of MPcs have been studied as the potential chemical sensor for NO$_2$gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy)copper-phthalocyanine were prepared by Langmuir-Blodgett method and characterized by using UV-VIS absorption spectroscopy and ellipsometry. Optimal transfer condition of LB films was investigated and preliminary results of current-voltage(I-V) characteristics of these films exposed to NO$_2$gas as a function of film thickness, temperature and concentration were discussed.

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미분 변조 전반사 감쇠법에 의해 측정된 Langmuir-Blodgett 박막의 비선형 광학적 성질 (Non-linear Optical Properties of the Langmuir-Blodgett Films Measured by the Differential Attenuated Total Reflection Method)

  • 정미윤
    • 한국광학회:학술대회논문집
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    • 한국광학회 1991년도 제6회 파동 및 레이저 학술발표회 Prodeedings of 6th Conference on Waves and Lasers
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    • pp.94-97
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    • 1991
  • We have deposited the three kinds of the Langmuir-Blodgett films (Phenylhy drazone, O-stilbazene, N-stilbazene) which have optically nonlinear effect. To study the electro-optic characteristics of these LB films, we performed the differential attenuated total reflection experiment in which the optical properties of the LB films modulated by the electric field(νE = 1KHz). The surface non-linear susceptibilities $\chi$(2) of these LB films obtained, are 1.17$\times$10-10 (m/V), 36.3$\times$10-10 (m/V), and 1.62$\times$10-10 (m/V) for Phenylhydrazone, O-stilbazene, and N-stilbazene, respectively.

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Zn(II)-Porphyrin LB막의 전기, 화학적 특성에 관한 연구 (Electrical and Chemical characteristics of Zn(II)-Porphyrin Langmuir-Blodgett(LB) Films)

  • 구자룡;이호식;김영관;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.752-755
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    • 2002
  • Since Metallo-Porphyrin (MP) is very interesting compound due to its unique electronic and redox properties and it is also chemically and thermally stable, MP has been studied for potential memory and switching devices. In this study, thin films of 5,10,15,20 - Tetrakis - Octadecyloxymethylphenyl - Porphyrin - Zn(II) (Zn-TPP) were prepared by the Langmuir-Blodgett (LB) method and characterized by using UV/vis absorption spectroscopy and cyclic voltammetry. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was $135{\AA}^2$/molecule. The current-voltage (I-V) characteristics of these films were investigated.

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