• Title/Summary/Keyword: Langmuir films

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Revealing Strong Metal Support Interaction during CO Oxidation with Metal Nanoparticle on Reducible Oxide Substrates

  • Park, Dahee;Kim, Sun Mi;Qadir, Kamran;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.264-264
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    • 2013
  • Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.

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Electrical conduction phenomena of $C_{22}$--quinolium(TCNQ) langmuir-blodgett films under the high-electric field ($C_{22}$-quinolium(TCNQ) LB막의 고전게 전기전도 현상)

  • 신동명;김태완;홍언식;송일식;유덕선;강도열
    • Electrical & Electronic Materials
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    • v.7 no.2
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    • pp.138-144
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    • 1994
  • Electrical conduction phenomena of $C_{22}$-quinolium(TCNQ) Langmuir- Blodgett(LB) films are reported through a study of current-voltage(I-V) characteristics along a perpendicular direction. The I-V characteristics were investigated by applying a step or a pulse voltage to the specimen as well as changing temperatures in the range of 20-250[.deg. C] It show an ohmic behavior in low-electric field, and a nonohmic behavior in high-electric field. This nonohmic behavior has been interpreted in terms of a conduction mechanism of space-charge limited current and Schottky effect. When the electric field is near the strength of 10$_{6}$ V/cm, there occur anomalous phenomena similar to breakdown. When step or pulse voltage is applied, the breakdown voltage shifts to the higher one as the step or pulse time width becomes shorter. To see the influence of temperature, current was measured as a function of temperature under the several bias voltages, which are lower than that of breakdown. It shows that the current increases to about 103 times near 60-70[.deg. C], and remains constant for a while up to around 150[.deg. C] and then suddenly drops. We have also performed a DSC(differential scanning calorimetry) measurement with $C_{22}$-quinolium(TCNQ) powder in the range of 30-300[.deg. C]. These results imply that the anomalous phenomena occuring in the high electric field are caused by the electrical and internal thermal effect such as a joule heating.ating.

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The Study on the Non-Uniformity of PECVD SiO2 Deposition by the Plasma Diagnostics (플라즈마 진단에 의한 PECVD SiO2 증착의 불균일성 원인 연구)

  • Ham, Yong-Hyun;Kwon, Kwang-Ho;Lee, Hyun-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.2
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    • pp.89-94
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    • 2011
  • The cause of the thickness non-uniformity in the large area deposition of $SiO_2$ films by PECVD(Plasma Enhanced Chemical Vapor Deposition) was investigated by the plasma diagnostics. The spatial distribution of the plasma species in the chamber was obtained with DLP(Double Langmuir Probe) and the new-designed probe-type QMS(Quadrupole Mass Spectrometer). From the relationship between the spatial distribution of the plasma species and the depositing rate of the $SiO_2$ films, it was conformed that the non-uniform deposition of $SiO_2$ films was related with the spatial distribution of the oxygen radical density and electron temperature.

A Study on the $NO_2$ Gas Detection Chracteristics of the Octa(2-ethylhexyloxy) Copper-Phthalocyanine LB Film Depending on the Film Thickness and Temperature (두께와 온도에 따른 Octa(2-ethylhexyloxy) Copper-phthalocyanine LB막의 $NO_2$ 가스 탐지 특성에 관한 연구)

  • Yim, Jun-Seok;Shin, Hyun-Man;Kim, Young-Kwan;Kim, Jung-Soo;Sohn, Byung-Chung
    • Journal of the Korean Applied Science and Technology
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    • v.13 no.3
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    • pp.105-109
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    • 1996
  • It is well known that the metallo- phthalocyanine (MPcs) are sensitive to toxic gaseous molecules such as $NO_2$ and also chemically and thermally stable, Therefore, lots of MPcs have been studied for the potential chemical sensor for $NO_2$ gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, ultra-thin films of octa(2-ethylhexyloxy)copper-phthalocyanine were prepared by Langmuir-Blodgett method and characterized by using UV-VIS absortion spectroscopy and ellipsometry. Transfer condition, and characterization of LB films were investigated and preliminary results of current-voltage(I-V) characteristics of these films exposed to $NO_2$ gas as a function of film thickness and temperature were discussed.

Surface Properties of the etched Pt thin films by Inductive Coupled plasma (ICP로 식각된 Pt 박막의 표면특성)

  • 김창일;권광호;김태형;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.285-288
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    • 1997
  • Generally the high dielectric films, such as PZT(Pb(Z $r^{1-x}$ $Ti_{x}$ ) $O_3$) and BST(B $a_{l-x}$S $r_{x}$ Ti $O_3$) have been formed on the Pt thin films. However it is generally known that the dry etching of Pt is difficult because of its chemical stability. So, the dry etching of Pt remains at the preliminary work. Therefore, in this study, Pt etching mechanism was investigated with Ar/C $l_2$gas plasma by using XPS(X-ray photoelectron spectroscopy) and QMS(Quadrupole mass spectrometry). Ion current density was measured with Ar/C $l_2$gas plasma by using single Langmuir probe. XPS results shoved that the atomic % of Cl element on the etched Pt sample increased with increasing Ar/(Ar+C $l_2$). And QMS results showed that the increase of Ar partial pressure in the plasma resulted in the improvement of C $l_2$dissociation and Cl redical formation and simultaniously the increase of ion bombardment effects.s.s.

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Electrochemical Properties and Photoisomerization of DOPC-8A5H Mixture Langmuir-Blogett Films (인지질(DOPC)과 지방산(8A5H)의 혼합 LB막의 광이성질화 현상과 전기화학적 특성)

  • Park, Keun-Ho;Choi, Sung-Hyun;Kim, Nam-Seok;Kim, Duck-Sool
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.874-877
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    • 2004
  • We carried out this subject to observe electrochemical properties of 1,2-dioleoyl-sn- glycero-3-phosphocholine(DOPC) mixed with fatty acid containing azobenzene group by using cyclic voltammetry with a three-electrode system, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode in $NaClO_4$ solution. We investigated the photoisomerization and electrochemical property of the organic ultra thin film of fatty acid containing azobenzene was prepared on the hydrophilic ITO(idium tin oxide) glass plate by LB method. As a result, the absorption spectra of BASH and DOPC of mixture LB films was induced to photoisomerization by alternating irradiation of ultraviolet and visible light. A measuring range was reduced from initial potential to -1350mV, continuously oxidized to 1650 mV and measured to the initial point. The scan rate were 50, 100, 150 and 200 mV/s. As a results, LB films of BASH-DMPC appeared reversible process caused by the reduction-oxidation current from the cyclic voltammogram.

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Emitting Properties of Poly(3-hexylthiophene) deposited by LB method (LB법에 의한 제막된 poly(3-hexylthiophene)의 발광특성)

  • Seo, Bu-Wan;Kim, Ju-Seung;Gu, Hal-Bon;Lee, Kyung-Sup;Park, Bok-Gi;Park, Gye-Chun
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.962-964
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    • 1999
  • We studied emitting properties of devices fabricated using the spin-coating and Langmuir-Blodgett[LB] technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. Poly(3-hexylthiophene)[P3HT] LB films used as the emitting layer in light-emitting devices. LB monolayers were deposited 27 layers onto the indium-tin-oxide[ITO] as Y-type films by the vertical dipping method. The thickness is about 80nm. Absorption spectrum of LB films presented that P3HT is regiorandom conformation. Also, current-voltage-luminance characteristics and electroluminescence spectra of light-emitting devices fabricated by LB method is studied. In current-voltage-luminescence characteristics, turn-on voltage of P3HT LB film LEDs is higher than that of spin-coating LEDs. But electroluminescence spectrum is similar to the spin-coating LEDs. The orange-red light was clearly visible in a darkened room.

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A study on the I-V Properties of Long Chain Fatty Acid of LB Thin Films (장쇄지방산 LB박막의 전류-전압 특성에 관한 연구)

  • Chon, Dong-Kyu;Chang, Hun;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.913-919
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    • 2000
  • We give pressure stimulation into long chain fatty acid of LB thin films then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 13, 17 and 19. The I-V characteristic of the device is measured from 0[V] to +1.5[V]. We have investigated the capacitance because this fatty acid system have a accumulated layers. The maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

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Photo Stimulus Displacement Properties of Nano structure Organic Ultra Thin Films (나노구조 유기초박막의 광자격 변위특성)

  • Song, Jin-Won;Cho, Su-Young;Choi, Young-Il;Lee, Kyung-Sup
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.209-211
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    • 2004
  • In the Langmuir-Boldgett(LB) technique, a monolayer on the water surface is transferred on to a substrate, which is raised and dipped through the surface, and one can obtain multilayers in which constituent molecules periodically are arranged in layer. The LB technique has attracted considerable interest in the fabrication of electrical and electronic device, e.g.. Many researchers have investigated the electrical properties of monolayer and multiplayer films. Dendrimers represent a new class of synthetic macromolecules sharacterized by a regularly branched treelike structure. Multiple branching yields a large number of chain ends, which distinguishes dendrimers from conventional starlike polymers and microgels. Azobenzene dendrimer is one of the dendritic macromolecules that includes the azo-group which exhibits a photochromic character. Due to the presence of the charge transfer part, the azo-group, and having a rod-shaped structure, these compounds are expected to have the potential interest in electronics and ptoelectronics, especially in nonlinear optics. In the present paper, we give a pressure stimulation into organic thin films and detect the induced displacement current.

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A Study of Al2O3 Thin Films Etching Characteristics Using Inductively Coupled BCl3/Ar Plasma (유도결합형 BCl3/Ar 플라즈마를 이용한 Al2O3 박막의 식각 특성)

  • Kim, Young-Keun;Kwon, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.6
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    • pp.445-448
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    • 2011
  • In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.